REF2940AIDBZR ,4.096V 100ppm/C, 50uA in SOT23-3 Series (Bandgap) Voltage ReferenceBlock Diagram... 11Information..... 198.3 Feature Description.... 114 Revision HistoryChanges from ..
REF2940AIDBZT ,4.096V 100ppm/C, 50uA in SOT23-3 Series (Bandgap) Voltage ReferenceFeatures 3 DescriptionThe REF29xx is a precision, low-power, low-voltage1• MicroSIZE Package: SOT-2 ..
REF3012AIDBZR ,1.25V 50ppm/C, 50uA in SOT23-3 Series (Bandgap) Voltage ReferenceBlock Diagram... 1113 Mechanical, Packaging, and Orderable8.3 Feature Description.... 11Information ..
REF3012AIDBZRG4 ,1.25V 50ppm/Degrees C, 50uA in SOT23-3 Series (Bandgap) Voltage Reference 3-SOT-23 -40 to 125 SBVS032H–MARCH 2002–REVISED FEBRUARY 20185 Device Comparison TablePART NUMBER VOLTAGE (V)REF3012 1 ..
REF3012AIDBZT ,1.25V 50ppm/C, 50uA in SOT23-3 Series (Bandgap) Voltage ReferenceElectrical Characteristics.. 6• Added turnon settling time TYP value of 120 µs (deleted by mistake ..
REF3012AIDBZT ,1.25V 50ppm/C, 50uA in SOT23-3 Series (Bandgap) Voltage ReferenceFeatures 3 DescriptionThe REF30xx is a precision, low-power, low-dropout1• microSize Package: SOT-2 ..
RN1411 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsRN1410,RN1411 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1410,RN1411 Switchin ..
RN1412 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsRN1412,RN1413 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1412,RN1413 Switchin ..
RN1413 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsApplications With built-in bias resistors Simplify circuit design Reduce a quantity of par ..
RN1414 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsApplications With built-in bias resistors Simplify circuit design Reduce a quantity of par ..
RN1415 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsRN1414RN1418 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1414,RN1415,RN1416 RN ..
RN1416 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsApplications With built-in bias resistors Simplify circuit design Reduce a quantity of par ..
REF2940AIDBZR-REF2940AIDBZT
4.096V 100ppm/C, 50uA in SOT23-3 Series (Bandgap) Voltage Reference
t V
lta
e (m 5 10 15 20 25 30
Load Current (mA)
Product
Folder
Sample &
Buy
Technical
Documents
Tools &
Software
Support &
Community
Reference
Design
REF2912, REF2920, REF2925
REF2930, REF2933, REF2940SBVS033C–JUNE 2002–REVISED JUNE 2016
REF29xx 100 ppm/°C, 50 µAin 3-Pin SOT-23 CMOS Voltage Reference Features MicroSIZE Package: SOT-23 Low Dropout:1 mV High Output Current:25 mA Low Temperature Drift: Maximumof 100 ppm/°C High Accuracy: 2% LowIQ: Maximumof 50 µA
Applications Portable, Battery-Powered Equipment Data Acquisition Systems Medical Equipment Hand-Held Test Equipment
DescriptionThe REF29xxisa precision, low-power, low-voltage
dropout voltage reference family availableina tiny
3‑pin SOT-23 package.
The small size and low power consumption (50 µA
maximum)of the REF29xx makeit ideal for portable
and battery-powered applications. The REF29xx does
not requirea load capacitor, butitis stable with any
capacitive load.
Unloaded, the REF29xx can be operated with
supplies within1 mVof output voltage.All models are
specified for the wide temperature range, –40°Cto
125°C.
Device Information(1)(1) Forall available packages, see the orderable addendumat
the endofthe data sheet.
Dropout Voltagevs Load Current
