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REF2912AIDBZRTIN/a218000avai1.25V 100ppm/C, 50uA in SOT23-3 Series (Bandgap) Voltage Reference
REF2912AIDBZRG4BBN/a90avai1.25V 100ppm/Degrees C, 50uA in SOT23-3 Series (Bandgap) Voltage Reference 3-SOT-23 -40 to 125
REF2912AIDBZRG4TIN/a91avai1.25V 100ppm/Degrees C, 50uA in SOT23-3 Series (Bandgap) Voltage Reference 3-SOT-23 -40 to 125
REF2912AIDBZTBB ?N/a214avai1.25V 100ppm/C, 50uA in SOT23-3 Series (Bandgap) Voltage Reference


REF2912AIDBZR ,1.25V 100ppm/C, 50uA in SOT23-3 Series (Bandgap) Voltage ReferenceBlock Diagram... 11Information..... 198.3 Feature Description.... 114 Revision HistoryChanges from ..
REF2912AIDBZRG4 ,1.25V 100ppm/Degrees C, 50uA in SOT23-3 Series (Bandgap) Voltage Reference 3-SOT-23 -40 to 125Features... 19 Application and Implementation...... 152 Applications..... 19.1 Application Informat ..
REF2912AIDBZRG4 ,1.25V 100ppm/Degrees C, 50uA in SOT23-3 Series (Bandgap) Voltage Reference 3-SOT-23 -40 to 125Features 3 DescriptionThe REF29xx is a precision, low-power, low-voltage1• MicroSIZE Package: SOT-2 ..
REF2912AIDBZT ,1.25V 100ppm/C, 50uA in SOT23-3 Series (Bandgap) Voltage Reference SBVS033C–JUNE 2002–REVISED JUNE 20165 Device Comparison TablePRODUCT VOLTAGE (V)REF2912 1.25REF292 ..
REF2920AIDBZR ,2.048V 100ppm/C, 50uA in SOT23-3 Series (Bandgap) Voltage ReferenceFeatures 3 DescriptionThe REF29xx is a precision, low-power, low-voltage1• MicroSIZE Package: SOT-2 ..
REF2920AIDBZR ,2.048V 100ppm/C, 50uA in SOT23-3 Series (Bandgap) Voltage Reference SBVS033C–JUNE 2002–REVISED JUNE 20165 Device Comparison TablePRODUCT VOLTAGE (V)REF2912 1.25REF292 ..
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RN1409 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsRN1407,RN1408,RN1409 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1407,RN1408,RN ..
RN1410 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsApplications With built-in bias resistors Simplify circuit design Reduce a quantity of par ..
RN1411 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsRN1410,RN1411 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1410,RN1411 Switchin ..
RN1412 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsRN1412,RN1413 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1412,RN1413 Switchin ..
RN1413 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsApplications With built-in bias resistors Simplify circuit design Reduce a quantity of par ..


REF2912AIDBZR-REF2912AIDBZRG4-REF2912AIDBZT
1.25V 100ppm/C, 50uA in SOT23-3 Series (Bandgap) Voltage Reference
t V
lta
e (m 5 10 15 20 25 30
Load Current (mA)
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REF2912, REF2920, REF2925
REF2930, REF2933, REF2940

SBVS033C–JUNE 2002–REVISED JUNE 2016
REF29xx 100 ppm/°C, 50 µAin 3-Pin SOT-23 CMOS Voltage Reference Features
MicroSIZE Package: SOT-23 Low Dropout:1 mV High Output Current:25 mA Low Temperature Drift: Maximumof 100 ppm/°C High Accuracy: 2% LowIQ: Maximumof 50 µA Applications Portable, Battery-Powered Equipment Data Acquisition Systems Medical Equipment Hand-Held Test Equipment Description
The REF29xxisa precision, low-power, low-voltage
dropout voltage reference family availableina tiny
3‑pin SOT-23 package.
The small size and low power consumption (50 µA
maximum)of the REF29xx makeit ideal for portable
and battery-powered applications. The REF29xx does
not requirea load capacitor, butitis stable with any
capacitive load.
Unloaded, the REF29xx can be operated with
supplies within1 mVof output voltage.All models are
specified for the wide temperature range, –40°Cto
125°C.
Device Information(1)

(1) Forall available packages, see the orderable addendumat
the endofthe data sheet.
Dropout Voltagevs Load Current
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