REF200AUG4 ,Dual, 100-?A Current Source/Sink 8-SOIC -25 to 85Block Diagram..... 712 Mechanical, Packaging, and Orderable7.3 Feature Description...... 7Informati ..
REF2912AIDBZR ,1.25V 100ppm/C, 50uA in SOT23-3 Series (Bandgap) Voltage ReferenceBlock Diagram... 11Information..... 198.3 Feature Description.... 114 Revision HistoryChanges from ..
REF2912AIDBZRG4 ,1.25V 100ppm/Degrees C, 50uA in SOT23-3 Series (Bandgap) Voltage Reference 3-SOT-23 -40 to 125Features... 19 Application and Implementation...... 152 Applications..... 19.1 Application Informat ..
REF2912AIDBZRG4 ,1.25V 100ppm/Degrees C, 50uA in SOT23-3 Series (Bandgap) Voltage Reference 3-SOT-23 -40 to 125Features 3 DescriptionThe REF29xx is a precision, low-power, low-voltage1• MicroSIZE Package: SOT-2 ..
REF2912AIDBZT ,1.25V 100ppm/C, 50uA in SOT23-3 Series (Bandgap) Voltage Reference SBVS033C–JUNE 2002–REVISED JUNE 20165 Device Comparison TablePRODUCT VOLTAGE (V)REF2912 1.25REF292 ..
REF2920AIDBZR ,2.048V 100ppm/C, 50uA in SOT23-3 Series (Bandgap) Voltage ReferenceFeatures 3 DescriptionThe REF29xx is a precision, low-power, low-voltage1• MicroSIZE Package: SOT-2 ..
RN1406 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsRN1401,RN1402,RN1403,RN1404,RN1405,RN1406 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Proc ..
RN1407 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsRN1407,RN1408,RN1409 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1407,RN1408,RN ..
RN1408 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsRN1407,RN1408,RN1409 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1407,RN1408,RN ..
RN1409 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsRN1407,RN1408,RN1409 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1407,RN1408,RN ..
RN1410 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsApplications With built-in bias resistors Simplify circuit design Reduce a quantity of par ..
RN1411 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsRN1410,RN1411 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1410,RN1411 Switchin ..
REF200-REF200AP-REF200AU-REF200AUG4
DUAL CURRENT SOURCE/CURRENT SINK
Sample & Support & Reference Product Tools & Technical Community Buy Design Folder Documents Software REF200 SBVS020B – SEPTEMBER 2000 – REVISED JULY 2015 REF200 Dual Current Source and Current Sink 1 Features 3 Description The REF200 combines three circuit building-blocks 1• Completely Floating: No Power Supply or Ground on a single monolithic chip: two 100-µA current Connections sources and a current mirror. The sections are • High Accuracy: 100 µA ±0.5% dielectrically isolated, making them completely • Low Temperature Coefficient: ±25 ppm/°C independent. Also, because the current sources are two-terminal devices, they can be used equally well • Wide Voltage Compliance: 2.5 V to 40 V as current sinks. The performance of each section is • Includes Current Mirror individually measured and laser-trimmed to achieve high accuracy at low cost. 2 Applications The sections can be pin-strapped for currents of 50 • Sensor Excitation µA, 100 µA, 200 µA, 300 µA, or 400 µA. External • Biasing Circuitry circuitry can obtain virtually any current. These and many other circuit techniques are shown in the • Offsetting Current Loops Application Information section of this data sheet. • Low Voltage References The REF200 is available in an SOIC package. • Charge-pump Circuitry • Hybrid Microcircuits (1) Device Information PART NUMBER PACKAGE BODY SIZE (NOM) REF200 SOIC (8) 3.91 mm × 4.90 mm (1) For all available packages, see the package addendum at the end of the data sheet. Functional Block Diagram I I Mirror 1 2 High High In Substrate 8 7 6 5 100µA 100µA 1 2 3 4 I I Mirror Mirror 1 2 Low Low Common Out 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA.
