REF1004C-2.5E4 ,Micropower Voltage Reference 8-SOIC 0 to 70REF10041.2V and 2.5V MicropowerVOLTAGE REFERENCE
REF1004I-1.2/2K5 ,1.2FEATURESDESCRIPTIONl INITIAL ACCURACY: The REF1004-1.2 and REF1004-2.5 are two terminalREF1004-1.2 ..
REF1004I-2.5 ,1.2FEATURESDESCRIPTIONl INITIAL ACCURACY: The REF1004-1.2 and REF1004-2.5 are two terminalREF1004-1.2 ..
REF1004I-2.5/2K5 ,Micropower Voltage Reference 8-SOIC -40 to 85FEATURESDESCRIPTIONl INITIAL ACCURACY: The REF1004-1.2 and REF1004-2.5 are two terminalREF1004-1.2 ..
REF102AP ,Precision Voltage ReferenceTYPICAL CHARACTERISTICSAt T = +25°C, V = +15V, unless otherwise noted.A SPOWER TURN-ON RESPONSE wit ..
REF102AU ,Precision Voltage ReferenceMAXIMUM RATINGSELECTROSTATICInput Voltage ..... +40VDISCHARGE SENSITIVITYOperating TemperatureP, U ..
RN1108CT ,Bias resistor built-in transistor (BRT)absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semi ..
RN1108MFV ,Bias resistor built-in transistor (BRT)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage V 50 ..
RN1109 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsRN1107~1109 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1107,RN1108,RN1109 Unit ..
RN1109CT ,Bias resistor built-in transistor (BRT)Applications ３• Incorporating a bias resistor into a transistor reduces the number of parts, which ..
RN1109F ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsRN1107F~RN1109F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1107F,RN1108F,RN1109 ..
RN1109FT ,Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.RN1107FT~RN1109FT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor buil ..
REF1004-2.5-REF1004C-2.5-REF1004C-2.5/2K5-REF1004C-2.5E4-REF1004I-2.5-REF1004I-2.5/2K5
1.2
REF1004 1.2V and 2.5V Micropower VOLTAGE REFERENCE FEATURES DESCRIPTION lINITIAL ACCURACY: The REF1004-1.2 and REF1004-2.5 are two terminal REF1004-1.2 ±4mV bandgap reference diodes designed for high accuracy REF1004-2.5 ±20mV with outstanding temperature characteristics at low operating currents. Prior to the introduction of thelMINIMUM OPERATING CURRENT: REF1004 Micropower Voltage References, accuracy REF1004-1.2 10μA and stability specifications could only be attained by REF1004-2.5 20μA expensive screening of standard devices. The REF1004 lEXCELLENT LONG TERM is a cost effective solution when reference voltage TEMPERATURE STABILITY accuracy, low power, and long term temperature sta- lVERY LOW DYNAMIC IMPEDANCE bility are required. lOPERATES UP TO 20mA REF1004 is a drop-in replacement for the LT1004 as lPACKAGE: 8-Lead SOIC well as an upgraded replacement of the LM185/385 series references. The REF1004C is characterized for operation from 0°C to 70°C and the REF1004I is APPLICATIONS characterized for operation from –40°C to +85°C. lBATTERY POWERED TEST EQUIPMENT The REF1004 is offered in an 8-lead Plastic SOIC lPORTABLE MEDICAL INSTRUMENTATION package and shipped in anti-static rails or tape and reel.lPORTABLE COMMUNICATIONS DEVICES lA/D AND D/A CONVERTERS lNOTEBOOK AND PALMTOP COMPUTERS Typical Operating Circuit NC
1
8
Cathode
2
7
NC
NC
NC
3
6
Cathode
Anode 4 5 NC (Top View) International Airport Industrial Park • Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: (520) 746-1111 • Twx: 910-952-1111 • Cable: BBRCORP • Telex: 066-6491 • FAX: (520) 889-1510 • Immediate Product Info: (800) 548-6132 © 1992 Burr-Brown Corporation PDS-1172 Printed in U.S.A. October, 1993 SBVS002
