RB751S-40 ,Schottky Barrier DiodeRB751S40 — Schottky Barrier DiodesSeptember 2009RB751S40Schottky Barrier Diodes
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RB751S-40
Schottky Barrier Diode
RB751S40 — Schottky Barrier Diodes September 2009 RB751S40 Schottky Barrier Diodes Features • Low Forward Voltage Drop • Flat Lead, Surface Mount Device Under 0.70mm Height • Extremely Small Outline Plastic Package SOD523F Cathode Anode • Moisture Level Sensitivity 1 ELECTRICAL SYMBOL • Pb-free Version and RoHS Compliant • Matte Tin (Sn) Lead Finish SOD-523F • Green Mold Compound Band Indicates Cathode RB7 51S4 0 Marking : 4B Absolute Maximum Ratings * T =25°C unless otherwise noted A Symbol Parameter Value Units V Maximum Repetitive Reverse Voltage 40 V RRM I Average Rectified Forward Current 30 mA F(AV) I Non-Repetitive Peak Forward Current 500 mA FSM T Operating Junction Temperature Range -55 to +125 °C J T Storage Temperature Range -55 to +125 °C STG * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol Parameter Value Units P Total Device Dissipation (T =25°C) 200 mW D C R Thermal Resistance, Junction to Ambient 500 °C/W θJA * Device mounted on FR-4 PCB minimum land pad. Electrical Characteristics T =25°C unless otherwise noted A Symbol Parameter Test Condition Min. Typ. Max. Units 30 V BV Breakdown Voltage I =10μA R R 0.5 μA I Reverse Leakage Current V =30V R R V Forward Voltage I =1mA 0.37 V F F © 2009 RB751S40 Rev. A2 1
