QSB320FTR ,Surface Mount Silicon Infrared PhototransistorQSB320FSURFACE MOUNT SILICON INFRARED PHOTOTRANSISTOR PACKAGE DIMENSIONS0.118 (3.0)0.083 (2.1)0.10 ..
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QSB320FTR
Surface Mount Silicon Infrared Phototransistor
QSB320F SURFACE MOUNT SILICON INFRARED PHOTOTRANSISTOR PACKAGE DIMENSIONS 0.118 (3.0) 0.083 (2.1) 0.102 (2.6) 0.067 (1.7) 0.091 (2.3) 0.041 (0.1) 0.083 (2.1) 0.035 (0.9) 0.028 (0.7) 0.134 (3.4) 0.118 (3.0) 0.094 (2.4) FEATURES SCHEMATIC 0.043 (1.1) 0.020 (0.5) Surface Mount PLCC-2 Package COLLECTOR COLLECTOR Wide Reception Angle, 120° 0.024 (0.6) 0.007 (.18) 0.016 (0.4) 0.005 (.12) High Sensitivity Phototransistor Output NOTES: Matched Emitter: QEB421 EMITTER 1. Dimensions for all drawings are in inches (millimeters). Daylight Filter 2. Tolerance of ± .010 (.25) on all non nominal dimensions unless otherwise specified. NOTES (T = 25°C unless otherwise specified) ABSOLUTE MAXIMUM RATINGS A 1. Derate power dissipation linearly 2.2 mW/°C above 25°C. Parameter Symbol Rating Unit 2. RMA flux is recommended. Operating Temperature T -55 to +100 °C OPR 3. Methanol or isopropyl alcohols Storage Temperature T -55 to +100 °C STG are recommended as cleaning (2,3) agents. Soldering Temperature (Flow) T 260 for 10 sec °C SOL-F 4. D= 940 nm. Collector Emitter Voltage V 35 V CE Emitter Collector Voltage V 5V EC Collector Current I 15 mA C (1) Power Dissipation P 165 mW D (TA =25°C) ELECTRICAL / OPTICAL CHARACTERISTICS PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS Peak Sensitivity Wavelength D — 880 — nm PS Wavelength Sensitivity Range D 700 — 1000 nm SR Reception Angle 0 — 120 — Deg. Collector Emitter Dark Current V = 25 V, E = 0 I — — 200 nA CE e D Collector Emitter Breakdown I = 1 mA BV 30 — — V C CEO Emitter Collector Breakdown I = 100 µA BV 5— — V E ECO 2(4) On-State Collector Current E = 0.1 mW/cm , V = 5 V I 16 — — µA e CE C (ON) 2(4) Saturation Voltage E = 0.5 mW/cm , I = 0.05 mA V — — 0.3 V e C CE (SAT) Rise Time V = 5 V, R = 100 1 t —8 — µs CC L r Fall Time I = 1 mA t —8 — µs C f 2001 DS300387 2/26/01 1 OF 3
