PZTA63 ,PNP Silicon Darlington Transistor for...characteristicsCollector-emitter breakdown voltage V(BR)CES 30 – – VIC = 100 μACollector-base break ..
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PZTA63-PZTA64
PNP Silicon Darlington Transistor for...
SHIEMIENS
PNP Silicon Darlington Transistors
o For general AF applications
0 High collector current
0 High current gain
PZTA 63
PZTA 64
o Complementary types: PZTA 13, PZTA 14 (NPN) ps-"" " "h
( tf _,
\‘J‘x-
Type Marking Ordering Code Pin Configuration Package')
(tape and reel) 1 2 3 4
PZTA 63 PZTA 63 Q62702-Z2031 B C E C SOT-223
PZTA 64 PZTA 64 Q62702-Z2032
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage VCES 30 V
Collector-base voltage VCBo 30
Emitter-base voltage VEBO 10
Collector current lo 500 mA
Peak collector current [CM 800
Base current ha 100
Peak base current IBM 200
Total power dissipation, Ts = 124 ( Ptot 1.5 W
Junction temperature T; 150 (
Storage temperature range Tstg - 65 ... + 150
Thermal Resistance
Junction - ambient) RthJA s 72 KNV
Junction - soldering point Rmus s 17
1) For detailed information see chapter Package Outlines.
2) Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu.
1 5.91
Semiconductor Group
SIEMENS
PZTA 63
PZTA 64
Electrical Characteristics
at TA = 25 °C, unless otherwise specified.
Parameter
Symbol
Values
DC characteristics
Collector-emitter breakdown voltage
fc = 100 PA
V(BR)CES
Collector-base breakdown voltage
/c=100pA,ha=0
V(BR)CBO
Emitter-base breakdown voltage
IE=10uA,IC=0
V(BR)EBO
Collector-base cutoff current
VCE=30V,IE=0
VCE = 30 V, he = 0, TA-- 150 (
Emitter-base cutoff current
VEB=1OV,IC=O
DC current gain
fc =10 mA, VCE = 5 V PZTA 63
PZTA 64
[c = 100 mA, VCE = 5 V PZTA 63
PZTA 64
Collector-emitter saturation voltage"
Ic = 100 mA, h, = 0.1 mA
VCEsat
Base-emitter saturation voltage")
h: = 100 mA, Ia = 0.1mA
VBEsat
AC characteristics
Transition frequency
fc = 50 mA, VCE = 5V,f= 100 MHz
1) Pulse test conditions: ts 300 us, D = 2 %.
Semiconductor Group
