PZTA42T1 ,HIGH VOLTAGE TRANSISTOR SURFACE MOUNTELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristics Symbol Min Max UnitOFF ..
PZTA42T1 ,HIGH VOLTAGE TRANSISTOR SURFACE MOUNTELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristics Symbol Min Max UnitOFF ..
PZTA42T1G , High Voltage Transistor Surface Mount
PZTA43 ,Ordering Code: n/aCharacteristicsCollector-emitter breakdown voltage VV(BR)CEOI = 1 mA, I = 0 PZTA 42 300 - -C BP ..
PZTA56 ,PNP General Purpose Amplifierapplications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C u ..
PZTA63 ,PNP Silicon Darlington Transistor for...characteristicsCollector-emitter breakdown voltage V(BR)CES 30 – – VIC = 100 μACollector-base break ..
R5F21102FP , RENESAS 16-BIT SINGLE-CHIP MICROCOMPUTER
R5F21103FP , RENESAS 16-BIT SINGLE-CHIP MICROCOMPUTER
R5F21104FP , RENESAS 16-BIT SINGLE-CHIP MICROCOMPUTER
R5F21104FP , RENESAS 16-BIT SINGLE-CHIP MICROCOMPUTER
R5F21132FP , 16-BIT SINGLE-CHIP MICROCOMPUTER M16C FAMILY/R8C/Tiny SERIES
R5F21133FP , 16-BIT SINGLE-CHIP MICROCOMPUTER M16C FAMILY/R8C/Tiny SERIES
PZTA42T1
NPN High Voltage Amplifier
High Voltage T ransistor
Surface Mount
NPN Silicon
MAXIMUM RATINGS
DEVICE MARKING
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
OFF CHARACTERISTICS1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min 0.93 in2.
2. Pulse Test Conditions, tp = 300 μs, δ = 0.02.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.COLLECTOR 2,4
BASE
EMITTER 3