PZTA29 ,Applications requiring extremely high current gain at collector currents to 500mAPZTA29 NPN Darlington TransistorPZTA29NPN Darlington Transistor• This device designed for
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PZTA29
Applications requiring extremely high current gain at collector currents to 500mA
PZTA29 NPN Darlington Transistor PZTA29 NPN Darlington Transistor • This device designed for applications requiring extremely high current gain at collector currents to 500mA. • Sourced from process 03. 4 3 2 1 SOT-223 1. Base 2.4. Collector 3. Emitter Absolute Maximum Ratings * T = 25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Emitter Voltage 100 V CES V Collector-Base Voltage 100 V CBO V Emitter-Base Voltage 12 V EBO I Collector Current - Continuous 800 mA C T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady limits. The factory should be consulted on application involving pulsed or low duty cycle operations Electrical Characteristics T = 25°C unless otherwise noted a Symbol Parameter Conditions Min. Max Units Off Characteristics V Collector-Emitter Breakdown Voltage I = 100μA, V = 0 100 V (BR)CES C BE V Collector-Base Breakdown Voltage I = 100μA, I = 0 100 V (BR)CBO C E V Emitter-Base Breakdown Voltage I = 10μA, I = 0 12 V (BR)EBO E C I Collector Cutoff Current V = 80V, I = 0 100 nA CBO CB E I Collector Cutoff Current V = 80V, V = 0 500 nA CES CE BE I Emitter Cut-off Current V = 10V, I = 0 100 nA EBO EB C On Characteristics h DC Current Gain V = 5.0V, I = 10mA 10,000 FE CE C V = 5.0V, I = 100mA 10,000 CE C V Collector-Emitter Saturation Voltage I = 10mA, I = 0.01mA 1.2 V CE(sat) C B I = 100mA, I = 0.1mA 1.5 V C B V Base-Emitter On Voltage I = 100mA, V = 5.0V 2.0 V BE(on) C CE Small Signal characteristics f Current Gain Bandwidth Product I = 10mA, V = 5.0V, f = 100MHz 125 MHz T C CE C Output Capacitance V = 1.0V, I = 0, f = 1.0MHz 8.0 pF obo CB E * Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0% ©2005 1 PZTA29 Rev. A
