PZTA27 ,NPN General Purpose AmplifierMPSA27/PZTA27MPSA27/PZTA27NPN General Purpose Amplifier4• This device is designed for
PZTA27 ,NPN General Purpose Amplifierapplications requiring extremely high current gain at collector currents to 500mA. 32• Sourced from ..
PZTA29 ,Applications requiring extremely high current gain at collector currents to 500mAPZTA29 NPN Darlington TransistorPZTA29NPN Darlington Transistor• This device designed for
PZTA29 ,Applications requiring extremely high current gain at collector currents to 500mAapplications requiring extremely high current gain at collector currents to 500mA.• Sourced from pr ..
PZTA42 ,NPN High Voltage AmplifierPZTA 42, PZTA 43NPN Silicon High-Voltage Transistors• High breakdown voltage4• Low collector-emitte ..
PZTA42T1 ,HIGH VOLTAGE TRANSISTOR SURFACE MOUNTELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristics Symbol Min Max UnitOFF ..
R5F21102FP , RENESAS 16-BIT SINGLE-CHIP MICROCOMPUTER
R5F21103FP , RENESAS 16-BIT SINGLE-CHIP MICROCOMPUTER
R5F21104FP , RENESAS 16-BIT SINGLE-CHIP MICROCOMPUTER
R5F21104FP , RENESAS 16-BIT SINGLE-CHIP MICROCOMPUTER
R5F21132FP , 16-BIT SINGLE-CHIP MICROCOMPUTER M16C FAMILY/R8C/Tiny SERIES
R5F21133FP , 16-BIT SINGLE-CHIP MICROCOMPUTER M16C FAMILY/R8C/Tiny SERIES
PZTA27
NPN General Purpose Amplifier
MPSA27/PZTA27 MPSA27/PZTA27 NPN General Purpose Amplifier 4 • This device is designed for applications requiring extremely high current gain at collector currents to 500mA. 3 2 • Sourced from process 03. 1 SOT-223 TO-92 • See MPSA28 for characteristics. 1 1. Emitter 2. Base 3. Collector 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings* T =25°C unless otherwise noted A Symbol Parameter Value Units V Collector-Emitter Voltage 60 V CES V Collector-Base Voltage 60 V CBO V Emitter-Base Voltage 10 V EBO I Collector current - Continuous 800 mA C T , T Operating and Storage Junction Temperature -55 ~ +150 °C J stg * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T =25°C unless otherwise noted A Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics V Collector-Emitter Breakdown Voltage I = 100μA, V = 0 60 V (BR)CES C BE V Collector-Base Breakdown Voltage I = 10μA, I = 0 60 V (BR)CBO C C V Emitter-Base Breakdown Voltage I = 100μA, I = 0 10 V (BR)EBO C C I Collector Cutoff Current V = 50V, I = 0 100 nA CBO CB E I Collector Cutoff Current V = 50V, V = 0 500 nA CES CE BE I Emitter Cutoff Current V = 10V, I = 0 100 nA EBO EB C On Characteristics h DC Current Gain I = 10mA, V = 5.0V 10000 FE C CE I = 100mA, V = 5.0V 10000 C CE V Collector-Emitter Saturation Voltage I = 100mA, I = 0.1mA 1.5 V CE(sat) C B V Base-Emitter On Voltage I = 100mA, V = 5.0V 2.0 V BE(on) C CE Small Signal Characteristics f Current Gain Bandwidth Product I = 10mA, V = 5.0V, 125 MHz T C CE f = 100MHz Thermal Characteristics T =25°C unless otherwise noted A Max. Symbol Parameter Units MPSA27 *PZTA27 P Total Device Dissipation 625 1000 mW D Derate above 25°C 5.0 8.0 mW/°C R Thermal Resistance, Junction to Case 83.3 °C/W θJC R Thermal Resistance, Junction to Ambient 200 125 °C/W θJA * Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm: mounting pad for the collector lead min. 6cm. ©2002 Rev. A, June 2002
