PZTA13 ,NPN Darlington Transistorapplications requiring extremelyhigh current gain at collector currents to 1.0 A. Sourced fromProc ..
PZTA13 ,NPN Darlington Transistor
PZTA14 ,NPN Darlington transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).SYMBOL PARAMETER CON ..
PZTA14T1 ,SOT-223 PACKAGE MEDIUM POWER NPN SILICON DARLINGTON TRANSISTOR SURFACE MOUNTELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristics Symbol Min Typ Max Uni ..
PZTA27 ,NPN General Purpose AmplifierMPSA27/PZTA27MPSA27/PZTA27NPN General Purpose Amplifier4• This device is designed for
PZTA27 ,NPN General Purpose Amplifierapplications requiring extremely high current gain at collector currents to 500mA. 32• Sourced from ..
R5F21102FP , RENESAS 16-BIT SINGLE-CHIP MICROCOMPUTER
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R5F21132FP , 16-BIT SINGLE-CHIP MICROCOMPUTER M16C FAMILY/R8C/Tiny SERIES
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PZTA13
NPN Darlington Transistor
MPSA13 / MMBTA13 / PZTA13 MPSA13 MMBTA13 PZTA13 C C E E C B TO-92 C B SOT-23 B SOT-223 E Mark: 1M NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage 30 V V Collector-Base Voltage 30 V CBO V Emitter-Base Voltage 10 V EBO I Collector Current - Continuous 1.2 A C Operating and Storage Junction Temperature Range -55 to +150 T , T °C J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units MPSA13 *MMBTA13 **PZTA13 PD Total Device Dissipation 625 350 1,000 mW Derate above 25°C 5.0 2.8 8.0 mW/°C Thermal Resistance, Junction to Case 83.3 R °C/W θJC Thermal Resistance, Junction to Ambient 200 357 125 R °C/W θJA *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 2 **Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm . ã 1997
