PZT751T1 ,PNP High CurrentELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristics Symbol Min Max UnitOFF ..
PZT751T1G ,PNP Silicon Planar Epitaxial TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristics Symbol Min Max UnitOFF ..
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PZT751T1
PNP High Current
PZT751T1
PNP Silicon Planar
Epitaxial Transistor
This PNP Silicon Epitaxial transistor is designed for use in
industrial and consumer applications. The device is housed in the
SOT−223 package which is designed for medium power surface
mount applications.
Features High Current: 2.0 A The SOT−223 Package can be soldered using wave or reflow. SOT−223 package ensures level mounting, resulting in improved
thermal conduction, and allows visual inspection of soldered joints.
The formed leads absorb thermal stress during soldering, eliminating
the possibility of damage to the die NPN Complement is PZT651T1 Pb−Free Package is Available
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
THERMAL CHARACTERISTICSMaximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are individual stress limit values (notnormal operating conditions) and are not valid simultaneously. If these limits areexceeded, device functional operation is not implied, damage may occur andreliability may be affected.1. Device mounted on a FR−4 glass epoxy printed circuit board using minimumrecommended footprint.
