PZT2907AT3 ,Small Signal A/Switch PNPMaximum ratings applied to the device are individual stress limit values (notPZT2907AT1G 1000 / Tap ..
PZT3904 E6327 ,NPN Silicon Switching TransistorCharacteristics at T = 25°C, unless otherwise specified.AParameter Symbol Values Unitmin. typ. max. ..
PZT3904E6327 ,NPN Silicon Switching TransistorPZT 3904NPN Silicon Switching Transistor• High DC current gain: 0.1mA to 100mA4• Low collector-emit ..
PZT3906 ,SMALL SIGNAL PNP TRANSISTORapplications involving pulsed or low duty cycle operations.2N3906 / MMBT3906 / MMPQ3906 / PZT3906PN ..
PZT4401 ,NPN switching transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).SYMBOL PARAMETER CON ..
PZT4403 ,40 V, 600 mA PNP switching transistorApplications Switching and linear amplification1.4 Quick reference data Table 1. Quick reference d ..
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PZT2907AT3
Small Signal A/Switch PNP
PZT2907AT1
Preferred Device PNP Silicon
Epitaxial Transistor
This PNP Silicon Epitaxial transistor is designed for use in linear
and switching applications. The device is housed in the SOT-223
package which is designed for medium power surface mount
applications. NPN Complement is PZT2222AT1 The SOT-223 package can be soldered using wave or reflow SOT-223 package ensures level mounting, resulting in improved
thermal conduction, and allows visual inspection of soldered joints.
The formed leads absorb thermal stress during soldering eliminating
the possibility of damage to the die. Pb−Free Package is Available
MAXIMUM RATINGS
THERMAL CHARACTERISTICSMaximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected. FR−4 with 1 oz and 713 mm2 of copper area.
