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PXTA42N/a433avai300 V, 100 mA NPN high-voltage transistor


PXTA42 ,300 V, 100 mA NPN high-voltage transistorThermal characteristicsSymbol Parameter Conditions Min Typ Max Unit[1]R thermal resistance from in ..
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PXTA42
300 V, 100 mA NPN high-voltage transistor
1. Product profile
1.1 General description

NPN high-voltage transistor in a medium power and flat lead SOT89 (SC-62)
Surface-Mounted Device (SMD) plastic package.
PNP complement: PXTA92.
1.2 Features and benefits
High breakdown voltage AEC-Q101 qualified Medium power and flat lead SMD plastic package
1.3 Applications
Electronic ballast for fluorescent lighting LED driver for LED chain module High Intensity Discharge (HID) front lighting Automotive motor management Hook switch for wired telecom Switch Mode Power Supply (SMPS)
1.4 Quick reference data

PXT A42
300 V , 100 mA NPN high-voltage transistor
Rev. 5 — 11 July 2011 Product data sheet
Table 1. Quick reference data

VCEO collector-emitter voltage open base - - 300 V collector current - - 100 mA
ICM peak collector current - - 200 mA
hFE DC current gain VCE =10V; =30mA - -
NXP Semiconductors PXTA42
300 V, 100 mA NPN high-voltage transistor
2. Pinning information

3. Ordering information

4. Marking

[1] * = placeholder for manufacturing site code
5. Limiting values

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
collector 6cm2.
Table 2. Pinning
Table 3. Ordering information

PXTA42 SC-62 plastic surface-mounted package; exposed die pad
for good heat transfer; 3 leads
SOT89
Table 4. Marking codes

PXTA42 *1D
Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).
VCBO collector-base voltage open emitter - 300 V
VCEO collector-emitter voltage open base - 300 V
VEBO emitter-base voltage open collector - 6 V collector current - 100 mA
ICM peak collector current - 200 mA
IBM peak base current - 100 mA
Ptot total power dissipation Tamb25C [1]- 1300 mW junction temperature - 150 C
Tamb ambient temperature 65 +150 C
Tstg storage temperature 65 +150 C
NXP Semiconductors PXTA42
300 V, 100 mA NPN high-voltage transistor
6. Thermal characteristics

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
7. Characteristics

8. Test information
8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
Table 6. Thermal characteristics

Rth(j-a) thermal resistance from
junction to ambient
in free air [1] -- 96 K/W
Rth(j-sp) thermal resistance from
junction to solder point 16 K/W
Table 7. Characteristics

Tamb =25 C unless otherwise specified.
ICBO collector-base cut-off
current
VCB =200 V; IE=0A - - 100 nA
IEBO emitter-base cut-off
current
VEB =6V; IC=0A - - 100 nA
hFE DC current gain VCE =10V; IC =1 mA 25 - -
VCE =10V; IC =10 mA 40 - -
VCE =10V; IC =30 mA 40 - -
VCEsat collector-emitter
saturation voltage =20mA; IB =2mA - - 500 mV
VBEsat base-emitter
saturation voltage =20mA; IB =2mA - - 900 mV transition frequency VCE =20V; IC =10 mA; = 100 MHz - - MHz
Cre feedback
capacitance
VCB =20V; IC =ic =0A; 1MHz 3 pF
NXP Semiconductors PXTA42
300 V, 100 mA NPN high-voltage transistor
9. Package outline

10. Packing information

[1] For further information and the availability of packing methods, see Section14.
[2] T1: normal taping
[3] T3: 90 taping
Table 8. Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.[1]
PXTA42 SOT89 8 mm pitch, 12 mm tape and reel; T1 [2] -115 -135 mm pitch, 12 mm tape and reel; T3 [3] -120 -
NXP Semiconductors PXTA42
300 V, 100 mA NPN high-voltage transistor
11. Soldering

NXP Semiconductors PXTA42
300 V, 100 mA NPN high-voltage transistor
12. Revision history
Table 9. Revision history
PXTA42 v.5 20110711 Product data sheet - PXTA42 v.4
Modifications: The format of this document has been redesigned to comply with the new identity
guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Section 1.1 “General description”: amended Section 1.2 “Features and benefits”: amended Section 1.3 “Applications”: amended Section 1.4 “Quick reference data”: added Figure 1: superseded by minimized package outline drawing Section 8 “Test information”: added Section 10 “Packing information”: added Section 11 “Soldering”: added Section 13 “Legal information”: updated
PXTA42 v.4 20041209 Product data sheet - PXTA42 v.3
PXTA42 v.3 19990426 Product specification - PXTA42_43_CNV v.2
PXTA42_43_CNV v.2 19970618 Product specification - -
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