PVD2352 ,200V 1 Form A Photo Voltaic Relay in a mod. 8-pin DIP Packageapplications such as processcontrol, multiplexing, telecommunications, automatictest equipment and ..
PVD2352N ,200V 1 Form A Photo Voltaic Relay in a mod. 8-pin DIP Packageapplications.Users of this International Rectifier product in such
PVD2352N ,200V 1 Form A Photo Voltaic Relay in a mod. 8-pin DIP Packageapplications such as process control, multiplexing,automatic test equipment and data acquisition.Th ..
PVD2352NS ,200V 1 Form A Photo Voltaic Relay in a mod. 8-pin SMT PackageFeaturesThe PVD33 Series DC Relay (PVD) is a single-pole,normally open, solid-state replacement for ..
PVD2352NS ,200V 1 Form A Photo Voltaic Relay in a mod. 8-pin SMT PackageElectrical Specifications (-40°C ≤ T ≤ +85°C unless otherwise specified)AINPUT CHARACTERISTICS PVD2 ..
PVD3354 ,300V 1 Form A Photo Voltaic Relay in a mod. 8-pin DIP PackageFeaturesThe Photovoltaic DC Relay (PVD) is a single-pole,BOSFET Power IC
PVD2352-PVD3354
200V 1 Form A Photo Voltaic Relay in a mod. 8-pin DIP Package
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TOR Rectifier
Replaced by PVD33N Data SheetNo. PD10025E
Series PVD33
Microelectronic Power IC
BOSFET® Photovoltaic Relay
Single-Pole, 220mA, 0-300V DC
General Description
The Photovoltaic DC Relay (PVD) is a single-pole,
normally open solid state replacement for electro-
mechanical relays used for general purpose switch-
ing of analog signals. It utilizes as an output switch a
unique bidirectional (AC or DC) MOSFET power IC
termed a BOSFET. The BOSFET is controlled by a
photovoltaic generator of novel construction, which
is energized by radiation from a dielectrically iso-
lated light emitting diode (LED).
The PVD overcomes the limitations of both conven-
tional and reed electromechanical relays by offering
the solid state advantages of long life, high operat-
ing speed, low pick-up power, bounce-tree opera-
tion, low thermal voltages and miniaturization. These
advantages allow product improvement and design
innovations in many applications such as process
control, multiplexing, telecommunications, automatic
test equipment and data acquisition.
The PVD can switch analog signals from thermo-
couple level to 300 volts peak DC. Signal frequen-
cies into the RF range are easily controlled and
switching rates up to 6kHz are achievable. The ex-
tremely small thermally generated offset voltages
allow increased measurement accuracies.
Unique silicon technology developed by International
Rectifier forms the heart of the PVD. The monolithic
BOSFET contains a bidirectional N-channel power
MOSFET output structure. In addition, this power IC
chip has input circuitry for fast turn-off and gate pro-
tection functions. This section of the BOSFET chip
utilizes both bipolar and MOS technology to form
NPN transistors, P-channel MOSFETs, resistors, di-
odes and capacitors.
The photovoltaic generator similarly utilizes a unique
International Rectifier alloyed multijunction structure.
The excellent current conversion efficiency of this
technique results in the very fast response of the
PVD microelectronic power IC relay.
This advanced semiconductor technology has cre-
ated a radically new control device. Designers can
now develop switching systems to new standards of
electrical performance and mechanical compactness.
Features
BOSFET Power IC D
1010Operations u
100psec Operating Time a
3 milliwatts Pick-Up Power I:
1000V/psec dv/dt u
Bounce-Free a
8-pin DIP Package "
-40°C to 85°C a
UL recognized I:
Part Identification
Part Number Operating Sensitivity Off-State
Voltage (DC) Resistance
PVD2352 200V 108 Ohms
PVD3354 300V 1010 Ohms
(BOSFET is a trademark of International Rectifier)
SfeilMB3 International
Replaced by PVD33N TOR Rectifier
Electrical Specifications (-40°C f TA S +85°C unless otherwise specified)
INPUT CHARACTERISTICS PVD2352 l PVD3354 Units
Minimum Control Current (see figures 1 and 2) DC
For 160mA Continuous Load Current 2.0 mA@25°C
For 200mA Continuous Load Current 5.0 mA@40°C
For 90mA Continuous Load Current 5.0 mA@85°C
Maximum Control Current for Off-State Resistance at 25°C 10 pA(DC)
Control Current Range (Caution: current limit input LED. See Figure 6) 2.0 to 25 mA(DC)
Maximum Reverse Voltage 7.0 V(DC)
OUTPUT CHARACTERISTICS PVD2352 PVD3354 Units
Operating Voltage Range 200 300 V(peak)
Maxiumum Load Current 40°C (see figures 1and 2) 220 mA(DC)
Response Time @25°C (see Figures 7 and 8)
Max. T(on) @ 12mA Control, 50 mA Load, 100 VDC 100 us
Max. T(off) @ 12mA Control, 50 mA Load, 100 VDC 50 us
Max. On-state Resistance 25°C (Pulsed) " 4) 50 mA Load, 5mA Control 6 9
Min. Off-state Resistance 25°C (see Figure 5) 1086P 160VDC 1010 © 240VDC n
Max. Thermal Offset Voltage @ 5.0mA Control 0.2 puolts
Min. Off-State dv/dt 1000 V/ps
Output Capacitance (see figure 9) 20 pF @ 50VDC
GENERAL CHARACTERISTICS (PVD2352 and PVD3354) Units
Dielectric Strength: Input-Output 2500 VRMS
Insulation Resistance: Input-Output @ 90Voc 10"@ 25''C - 50% RH Q
Maximum Capacitance: Input-Output 1.0 pF
Max. Pin Soldering Temperature (1.6mm below seating plane, 10 seconds max.) +260
Ambient Temperature Range: Operating -40 to +85 ''C
Storage -40 to +100
