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PVA3054-PVA3055
300V 1 Form A Photo Voltaic Relay in a mod. 8-pin DIP Package
Internet onol
TOR Rectifier
Replaced by PVA30N
Data Sheet No. PD10030E
Series PVA30
Microelectronic Power IC
BOSFET® Photovoltaic Relay
Single-Pole, 40mA, 0-300V AC/DC
General Description
The Photovoltaic AC Relay (PVA) is a single-pole, normally
open solid state replacement for electro-mechanical
relays used for general purpose switching of analog
signals. It utilizes as an output switch a unique bidirectional
(AC or DC) MOSFET power IC termed a BOSFET. The
BOSFET is controlled by a photovoltaic generator of novel
construction, which is energized by radiation from a
dielectrically isolated light emitting diode (LED).
The PVA30 series combines very low solid state output
capacitance, very high off-state resistance and very fast
response. These Photovoltaic Relays are designed
specifically to accurately switch low-level signals in high-
performance instrumentation systems.
The PVA overcomes the limitations of both conventional
and reed electromechanical relays by offering the solid
state advantages of long life, high operating speed, low
pick-up power, bounce-free operation, low thermal volt-
ages and miniaturization. These advantages allow product
improvement and design innovations in many applications
such as process control, multiplexing, telecommunications,
automatic test equipment and data acquisition.
The PVA30 series can switch analog signals from thermo-
couple level to 300 volts peak AC or DC polarity. Signal
frequencies into the RF range are easily controlled and
switching rates up to 25kHz are achievable.
The extremely small thermally generated offset voltages
allow increased measurement accuracies. The critical out-
put semiconductors are completely shielded from the
infra-red radiation of the input LED. Therefore, photo-
currents in the output BOSFET are nonexistent and there
is not an output offset resulting from radiation from the
input LED drive.
Unique silicon technology developed by International Rec-
Wer forms the heart of the PVA. The monolithic BOSFET
contains a bidirectional N-channel power MOSFET output
structure. In addition, this power IC chip has input circuitry
for fast turn-off and gate protection functions. This section
of the BOSFET chip utilizes both bipolar and MOS tech-
nology to form NPN transistors, P-channel MOSFETs,
resistors, diodes and capacitors.
The photovoltaic generator similarly utilizes a unique In-
ternational Rectifier alloyed multifunction structure. The
excellent current conversion efficiency of this technique
results in the very fast response of the PVA microelec-
tronic power to relay.
This advanced semiconductor technology has created a
radically new control device. Designers can now develop
switching systems to new standards of electrical perfor-
mance and mechanical compactness.
Features
BOSFET Power IC
1010Operations
25psec Operating Time
Low Output Capacitance
0.2pVolt Thermal Offset
Offset Independent of Input Drive
3 milliwatts Pick-Up Power
1000V/psec dv/dt
Bounce-Free
8-pin DIP Package
-40°C to 85°C
UL recognized
Part Identification
Part Number Operating
Voltage (ACIDC)
Off-State
Resistance
Sensitivity
PVA3054 1010 Ohms
0 - 300V 5 mA
PVA3055 1011 Ohms
(BOSFET is a trademark of International Rectifier)
SaiesWAH) Replaced by PVA30N International
TOR Rectifier
Electrical Specifications (-40°C f TA S +85°C unless otherwise specified)
INPUT CHARACTERISTICS PVA3054 l PVA3055 Units
Minimum Control Current (see figure 1) DC
For 40mA Continuous Load Current 5.0 mA@40°C
For 22mA Continuous Load Current 5.0 mA@60°C
Maximum Control Current for Off-State Resistance at 25°C 10 pA(DC)
Control Current Range (Caution: current limit input LED. See Ftgure 6) 2.0 to 25 mA(DC)
Maximum Reverse Voltage 7.0 V(DC)
OUTPUT CHARACTERISTICS PVA3054 PVA3055 Units
Operating Voltage Range 0 to i 300 V(pEAK)
Maxiumum Load Current 40°C (see figure 1) 40 mA(DC)
Response Time @25°C (see Figures 7 and 8)
Maximum T(on) @ 12mA Control, 20 mA Load, 100 VDC 25 us
Maximum T(off) @ 12mA Control, 20 mA Load, 100 VDC 15 us
Max. On-state Resistance 25°C (Pulsed) " 4) 10 mA Load, 5mA Control 160 9
Minimum Off-state Resistance 25''C @ 240 VDC 1010 1011 n
Maximum Off-state Leakage 25°C @ 5.0 VDC (see figure 5) - 0.05 nA
Maximum Thermal Offset Voltage @ 5.0mA Control Vows) 0.2 uvolts
Minimum Off-State dv/dt 1000 V/ps
Maximum Output Capacitance (see Ftgure 9) 3.0 pF @ 40VDC
GENERAL CHARACTERISTICS (PVA3054 and PVA3055) Units
Dielectric Strength: Input-Output 2500 VRMS
Insulation Resistance: Input-Output @ 90Voc 10"@ 25''C - 50% RH Q
Maximum Capacitance: Input-Output 1.0 pF
Max. Pin Soldering Temperature (1.6mm below seating plane, 10 seconds max.) +260
Ambient Temperature Range: Operating -40 to +85 ''C
Storage -40 to +100
