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PUMX1
40 V, 100 mA NPN/NPN general-purpose transistor
Product profile1.1 General descriptionNPN/NPN general-purpose transistor with two independently operating transistors in a
SOT363 (SC-88) very small Surface-Mounted Device (SMD) plastic package.
1.2 Features Double general-purpose transistor Board-space reduction Very small SMD plastic package
1.3 Applications General-purpose switching and amplification
Pinning information
PUMX1
40 V, 100 mA NPN/NPN general-purpose transistor
Rev. 04 — 20 January 2010 Product data sheet
Table 1. Product overviewPUMX1 SOT363 SC-88 PUMT1 PUMZ1
Table 2. Pinning1emitter TR1
2base TR1 collector TR2
4emitter TR2
5base TR2 collector TR1
sym0201 36
TR1
TR2
NXP Semiconductors PUMX1
40 V, 100 mA NPN general-purpose double transistor Ordering information Marking[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Limiting values[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Table 3. Ordering informationPUMX1 SC-88 plastic surface-mounted package; 6 leads SOT363
Table 4. Marking codesPUMX1 Z*Z
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
Per transistorVCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 40 V
VEBO emitter-base voltage open collector - 5 V collector current - 100 mA
ICM peak collector current - 200 mA
IBM peak base current - 200 mA
Ptot total power dissipation Tamb≤25 °C- 200 mW
Per devicePtot total power dissipation Tamb≤25°C [1] -300 mW junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
NXP Semiconductors PUMX1
40 V, 100 mA NPN general-purpose double transistor Thermal characteristics[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Characteristics[1] Pulse test: tp≤ 300 μs; δ≤ 0.02.
Table 6. Thermal characteristics
Per deviceRth(j-a) thermal resistance from junction
to ambient
in free air [1]- - 416 K/W
Table 7. CharacteristicsTamb =25 °C unless otherwise specified.
Per transistorICBO collector-base cut-off current VCB =30V; =0A - 100 nA
VCB =30V; =0A; = 150°C
--10 μA
IEBO emitter-base cut-off current VEB =4V; =0A - 100 nA
hFE DC current gain VCE =6V; =1mA
120 - -
VCEsat collector-emitter saturation
voltage =50 mA; =5mA
[1]- - 200 mV transition frequency IC =2mA;
VCE =12V;
f=100MHz
100 - - MHz collector capacitance VCB =12V; =ie =0A;
f=1MHz
--1.5 pF
NXP Semiconductors PUMX1
40 V, 100 mA NPN general-purpose double transistor Package outline Packing information[1] For further information and the availability of packing methods, see Section12.
[2] T1: normal taping
[3] T2: reverse taping
Table 8. Packing methodsThe indicated -xxx are the last three digits of the 12NC ordering code.[1]
PUMX1 SOT363 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -135 mm pitch, 8 mm tape and reel; T2 [3] -125 -165
NXP Semiconductors PUMX1
40 V, 100 mA NPN general-purpose double transistor
10. Revision history Table 9. Revision historyPUMX1_4 20100120 Product data sheet - PUMX1_3
Modifications:
• The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Table 1 “Product overview”: added
Section 1.2 “Features”: updated
Section 1.3 “Applications”: amended
Section 2 “Pinning information”: amended
Figure 1: superseded by minimized package outline drawing
Section 9 “Packing information”: added
Section 11 “Legal information”: updated
PUMX1_3 19990414 Preliminary specification - PUMX1_2
PUMX1_2 19970709 Preliminary specification - PUMX1_1
NXP Semiconductors PUMX1
40 V, 100 mA NPN general-purpose double transistor
11. Legal information
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[2] The term ‘short data sheet’ is explained in section “Definitions”.
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information is available on the Internet at URL http://.
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Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
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Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.