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PUMH9PHILIPSN/a2496000avaiNPN resistor-equipped double transistor


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PUMH9
NPN resistor-equipped double transistor

Philips Semiconductors Product specification
NPN resistor-equipped double transistor PUMH9
FEATURES
Transistors with built-in bias resistors (R1 typ.10 kΩ
and R2 typ.47 kΩ) No mutual interference between the transistors Simplification of circuit design Reduces number of components and board space.
APPLICATIONS
Especially suitable for space reduction in interface and
driver circuits Inverter circuit configurations without use of external
resistors.
DESCRIPTION

NPN resistor-equipped double transistor in an SC-88
(SOT363) plastic package.
MARKING
PINNING
Philips Semiconductors Product specification
NPN resistor-equipped double transistor PUMH9
LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).
Note
Device mounted on an FR4 printed-circuit board.
Philips Semiconductors Product specification
NPN resistor-equipped double transistor PUMH9
THERMAL CHARACTERISTICS
Note
Device mounted on an FR4 printed-circuit board.
CHARACTERISTICS

Tamb =25 °C unless otherwise specified.
Philips Semiconductors Product specification
NPN resistor-equipped double transistor PUMH9
Philips Semiconductors Product specification
NPN resistor-equipped double transistor PUMH9
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads SOT363
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