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PUMH9
NPN resistor-equipped double transistor
Philips Semiconductors Product specification
NPN resistor-equipped double transistor PUMH9
FEATURES Transistors with built-in bias resistors (R1 typ.10 kΩ
and R2 typ.47 kΩ) No mutual interference between the transistors Simplification of circuit design Reduces number of components and board space.
APPLICATIONS Especially suitable for space reduction in interface and
driver circuits Inverter circuit configurations without use of external
resistors.
DESCRIPTIONNPN resistor-equipped double transistor in an SC-88
(SOT363) plastic package.
MARKING
PINNING
Philips Semiconductors Product specification
NPN resistor-equipped double transistor PUMH9
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).
Note Device mounted on an FR4 printed-circuit board.
Philips Semiconductors Product specification
NPN resistor-equipped double transistor PUMH9
THERMAL CHARACTERISTICS
Note Device mounted on an FR4 printed-circuit board.
CHARACTERISTICSTamb =25 °C unless otherwise specified.
Philips Semiconductors Product specification
NPN resistor-equipped double transistor PUMH9
Philips Semiconductors Product specification
NPN resistor-equipped double transistor PUMH9
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads SOT363