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Partno	Mfg	Dc	Qty	Available	Descript
PUMH18	NXP	N/a	100	avai	NPN/NPN resistor-equipped transistors; R1 = 4.7 kOhm, R2 = 10 kOhm

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PUMH18
NPN/NPN resistor-equipped transistors; R1 = 4.7 k惟, R2 = 10 k惟
1. Product profile
1.1 General description
NPN/NPN double Resistor-Equipped Transistors (RET) in Surface-Mounted
Device (SMD) plastic packages.
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
PEMH18; PUMH18
NPN/NPN resistor-equipped transistors;
R1 = 4.7 k, R2 = 10 k
Rev. 4 — 19 December 2011 Product data sheet
Table 1. Product overview
PEMH18 SOT666 - PEMD18 PEMB18 ultra small and flat lead
PUMH18 SOT363 SC-88 PUMD18 PUMB18 very small 100 mA output current capability  Reduces component count Built-in bias resistors  Reduces pick and place costs Simplifies circuit design  AEC-Q101 qualified Low current peripheral driver Control of IC inputs Replaces general-purpose transistors in digital applications
Table 2. Quick reference data
Per transistor
VCEO collector-emitter voltage open base - - 50 V output current - - 100 mA bias resistor 1 (input) 3.3 4.7 6.1 k
R2/R1 bias resistor ratio 1.7 2.1 2.6
NXP Semiconductors PEMH18; PUMH18
NPN/NPN resistor-equipped transistors; R1 = 4.7 k, R2 = 10 k
2. Pinning information
3. Ordering information
4. Marking
[1] * = placeholder for manufacturing site code
Table 3. Pinning
Table 4. Ordering information
PEMH18 - plastic surface-mounted package; 6 leads SOT666
PUMH18 SC-88 plastic surface-mounted package; 6 leads SOT363
Table 5. Marking codes
PEMH18 6C
PUMH18 H5*
NXP Semiconductors PEMH18; PUMH18
NPN/NPN resistor-equipped transistors; R1 = 4.7 k, R2 = 10 k
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Per transistor
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 7 V input voltage
positive - +20 V
negative - 7V output current - 100 mA
ICM peak collector current single pulse;  1ms
-100 mA
Ptot total power dissipation Tamb25C
PEMH18 (SOT666) [1][2] -200 mW
PUMH18 (SOT363) [1] -200 mW
Per device
Ptot total power dissipation Tamb25C
PEMH18 (SOT666) [1][2] -300 mW
PUMH18 (SOT363) [1] -300 mW junction temperature - 150 C
Tamb ambient temperature 65 +150 C
Tstg storage temperature 65 +150 C
NXP Semiconductors PEMH18; PUMH18
NPN/NPN resistor-equipped transistors; R1 = 4.7 k, R2 = 10 k
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
Table 7. Thermal characteristics
Per transistor
Rth(j-a) thermal resistance from
junction to ambient
in free air
PEMH18 (SOT666) [1][2]- - 625 K/W
PUMH18 (SOT363) [1]- - 625 K/W
Per device
Rth(j-a) thermal resistance from
junction to ambient
in free air
PEMH18 (SOT666) [1][2]- - 417 K/W
PUMH18 (SOT363) [1]- - 417 K/W
NXP Semiconductors PEMH18; PUMH18
NPN/NPN resistor-equipped transistors; R1 = 4.7 k, R2 = 10 k
NXP Semiconductors PEMH18; PUMH18
NPN/NPN resistor-equipped transistors; R1 = 4.7 k, R2 = 10 k
7. Characteristics
[1] Characteristics of built-in transistor
Table 8. Characteristics
Tamb =25 C unless otherwise specified.
Per transistor
ICBO collector-base cut-off
current
VCB =50V; IE=0A - - 100 nA
ICEO collector-emitter cut-off
current
VCE =30V; IB =0A - - 1 A
VCE =30V; IB =0A; = 150C 5 A
IEBO emitter-base cut-off
current
VEB =5V; IC =0A - - 600 A
hFE DC current gain VCE =5V; IC =10 mA 50 - -
VCEsat collector-emitter
saturation voltage =10mA; IB =0.5 mA - - 100 mV
VI(off) off-state input voltage VCE =5V; IC= 100 A- 0.9 0.3 V
VI(on) on-state input voltage VCE =0.3 V; IC =20 mA 2.5 1.5 - V bias resistor 1 (input) 3.3 4.7 6.1 k
R2/R1 bias resistor ratio 1.7 2.1 2.6 collector capacitance VCB =10V; IE =ie =0A;
f=1MHz 2.5 pF transition frequency VCE =5V; IC =10 mA;
f=100MHz
[1] -230 - MHz
NXP Semiconductors PEMH18; PUMH18
NPN/NPN resistor-equipped transistors; R1 = 4.7 k, R2 = 10 k

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