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PUMD6NXPN/a318000avaiNPN/PNP resistor-equipped transistors; R1 = 4.7 kOhm, R2 = open


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PUMD6
R2 = open

NXP Semiconductors Product data sheet
NPN/PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open PEMD6; PUMD6
FEATURES
Built-in bias resistors Simplified circuit design Reduction of component count Reduced pick and place costs.
APPLICATIONS
Low current peripheral driver Replacement of general purpose transistors in digital
applications Control of IC inputs.
DESCRIPTION

NPN/PNP resistor-equipped transistors (see
“_Data_Sheet_Remark Supersedes data of 2003 Nov 04”
for package details).
QUICK REFERENCE DATA
PRODUCT OVERVIEW
Note
* = p: Made in Hong Kong.
* = t: Made in Malaysia.
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
NXP Semiconductors Product data sheet
NPN/PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open PEMD6; PUMD6
ORDERING INFORMATION
LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
Transistor mounted on an FR4 printed-circuit board, single-sided copper, standard footprint. Reflow soldering is the only recommended soldering method.
NXP Semiconductors Product data sheet
NPN/PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open PEMD6; PUMD6
THERMAL CHARACTERISTICS
Note
Transistor mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
CHARACTERISTICS

Tamb = 25 °C; unless otherwise specified.
NXP Semiconductors Product data sheet
NPN/PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open PEMD6; PUMD6
PACKAGE OUTLINES
NXP Semiconductors Product data sheet
NPN/PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open PEMD6; PUMD6
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