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Partno	Mfg	Dc	Qty	Available	Descript
PUMD20	NXP	N/a	21000	avai	NPN/PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm

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PUMD20
NPN/PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm
Product proﬁle1.1 General description
NPN/PNP Resistor-Equipped Transistors (RET).
1.2 Features Built-in bias resistors Simpliﬁes circuit design Reduces component count Reduces pick and place costs
1.3 Applications Low current peripheral driver Control of IC inputs Replaces general-purpose transistors in digital applications
1.4 Quick reference data
PEMD20; PUMD20
NPN/PNP resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ
Table 1: Product overview
PEMD20 SOT666 - PEMB20 PEMH20
PUMD20 SOT363 SC-88 PUMB20 PUMH20
Table 2: Quick reference data
VCEO collector-emitter voltage open base - - 50 V output current (DC) - - 100 mA bias resistor 1 (input) 1.54 2.2 2.86 kΩ
R2/R1 bias resistor ratio 0.8 1 1.2
Philips Semiconductors PEMD20; PUMD20 Pinning information Ordering information Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Table 3: Pinning GND (emitter) TR1 input (base) TR1 output (collector) TR2 GND (emitter) TR2 input (base) TR2 output (collector) TR1 001aab555 4 23
006aaa143
Table 4: Ordering information
PEMD20 - plastic surface mounted package; 6 leads SOT666
PUMD20 SC-88 plastic surface mounted package; 6 leads SOT363
Table 5: Marking codes
PEMD20 6H
PUMD20 T6*
Philips Semiconductors PEMD20; PUMD20 Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reﬂow soldering is the only recommended soldering method.
Table 6: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Per transistor; for the PNP transistor with negative polarity
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 10 V input voltage TR1
positive - +12 V
negative - −10 V
input voltage TR2
positive - +10 V
negative - −12 V output current (DC) - 100 mA
ICM peak collector current - 100 mA
Ptot total power dissipation Tamb≤25°C
SOT363 [1]- 200 mW
SOT666 [1][2]- 200 mW
Tstg storage temperature −65 +150 °C junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Per device
Ptot total power dissipation Tamb≤25°C
SOT363 [1]- 300 mW
SOT666 [1][2]- 300 mW
Philips Semiconductors PEMD20; PUMD20 Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reﬂow soldering is the only recommended soldering method. Characteristics
Table 7: Thermal characteristics
Per transistor
Rth(j-a) thermal resistance from
junction to ambient
in free air
SOT363 [1]- - 625 K/W
SOT666 [1][2]- - 625 K/W
Per device
Rth(j-a) thermal resistance from
junction to ambient
in free air
SOT363 [1]- - 416 K/W
SOT666 [1][2]- - 416 K/W
Table 8: Characteristics
Tamb = 25 °C unless otherwise speciﬁed.
Per transistor; for the PNP transistor with negative polarity
ICBO collector-base cut-off
current
VCB=50 V; IE=0A - - 100 nA
ICEO collector-emitter
cut-off current
VCE=30 V; IB =0A - - 1 μA
VCE=30 V; IB =0A;= 150°C 50 μA
IEBO emitter-base cut-off
current
VEB =5V; IC =0A - - 2 mA
hFE DC current gain VCE =5V; IC =20mA 30 - -
VCEsat collector-emitter
saturation voltage=10 mA; IB= 0.5 mA - - 150 mV
VI(off) off-state input
voltage
VCE =5V; IC=1 mA - 1.2 0.5 V
VI(on) on-state input
voltage
VCE= 0.3 V; IC =20mA 2 1.6 - V bias resistor 1 (input) 1.54 2.2 2.86 kΩ
R2/R1 bias resistor ratio 0.8 1 1.2 collector capacitance VCB=10 V; IE =ie =0A;=1 MHz
TR1 (NPN) - - 2.5 pF
TR2 (PNP) - - 3 pF
Philips Semiconductors PEMD20; PUMD20
Philips Semiconductors PEMD20; PUMD20

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