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PUMB24
PNP/PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhm
Product profile1.1 General descriptionPNP/PNP resistor-equipped transistors
1.2 Features Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place cost
1.3 Applications Low current peripheral driver Control of IC inputs Replacement of general-purpose transistors in digital applications
1.4 Quick reference data
PEMB24; PUMB24
PNP/PNP resistor-equipped transistors;
R1 = 100 kΩ, R2 = 100 kΩ
Rev. 02 — 2 September 2009 Product data sheet
Table 1. Product overviewPEMB24 SOT666 - PEMD24 PEMH24
PUMB24 SOT363 SC-88 PUMD24 PUMH24
Table 2. Quick reference dataVCEO collector-emitter voltage open base - - −50 V output current (DC) - - −20 mA bias resistor 1 (input) 70 100 130 kΩ
R2/R1 bias resistor ratio 0.8 1 1.2
NXP Semiconductors PEMB24; PUMB24
PNP/PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ Pinning information Ordering information Marking[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Table 3. Pinning GND (emitter) TR1 input (base) TR1 output (collector) TR2 GND (emitter) TR2 input (base) TR2 output (collector) TR1 001aab555
006aaa212 13
Table 4. Ordering informationPEMB24 - plastic surface mounted package; 6 leads SOT666
PUMB24 SC-88 plastic surface mounted package; 6 leads SOT363
Table 5. Marking codesPEMB24 6M
PUMB24 T7*
NXP Semiconductors PEMB24; PUMB24
PNP/PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ Limiting values[1] Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
[2] Reflow soldering is the only recommended soldering method.
Thermal characteristics[1] Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
[2] Reflow soldering is the only recommended soldering method.
Table 6. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
Per transistorVCBO collector-base voltage open emitter - −50 V
VCEO collector-emitter voltage open base - −50 V
VEBO emitter-base voltage open collector - −10 V input voltage
positive - +10 V
negative - −40 V output current (DC) - −20 mA
ICM peak collector current - −100 mA
Ptot total power dissipation Tamb ≤ 25°C
SOT363 [1]- 200 mW
SOT666 [1][2]- 200 mW
Tstg storage temperature −65 +150 °C junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Per devicePtot total power dissipation Tamb ≤ 25°C
SOT363 [1]- 300 mW
SOT666 [1][2]- 300 mW
Table 7. Thermal characteristics
Per transistorRth(j-a) thermal resistance from
junction to ambient
Tamb ≤ 25°C
SOT363 [1]- - 625 K/W
SOT666 [1][2]- - 625 K/W
Per deviceRth(j-a) thermal resistance from
junction to ambient
Tamb ≤ 25°C
SOT363 [1]- - 416 K/W
SOT666 [1][2]- - 416 K/W
NXP Semiconductors PEMB24; PUMB24
PNP/PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ Characteristics
Table 8. CharacteristicsTamb = 25 °C unless otherwise specified.
Per transistorICBO collector-base cut-off
current
VCB = −50 V; IE = 0 A - - −100 nA
ICEO collector-emitter
cut-off current
VCE = −30 V; IB = 0 A - - −1 μA
VCE = −30 V; IB = 0 A;= 150°C −50 μA
IEBO emitter-base cut-off
current
VEB = −5 V; IC = 0 A - - −50 μA
hFE DC current gain VCE = −5 V; IC = −5 mA 80 - -
VCEsat collector-emitter
saturation voltage
IC = −5 mA; IB = −0.25 mA - - −150 mV
VI(off) off-state input voltage VCE = −5 V; IC = −100 μA- −1.2 −0.5 V
VI(on) on-state input voltage VCE = −0.3 V; IC = −1 mA −3 −1.6 - V bias resistor 1 (input) 70 100 130 kΩ
R2/R1 bias resistor ratio 0.8 1 1.2 collector capacitance VCB = −10 V; IE = ie = 0 A;
f=1MHz - 2.5 pF
NXP Semiconductors PEMB24; PUMB24
PNP/PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ
NXP Semiconductors PEMB24; PUMB24
PNP/PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ Package outline
Plastic surface-mounted package; 6 leads SOT363
