PUMB20 ,PNP/PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhmapplications1.4 Quick reference dataTable 2. Quick reference dataSymbol Parameter Conditions Min Ty ..
PUMB24 ,PEMB24; PUMB24; PNP/PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhmapplications1.4 Quick reference dataTable 2. Quick reference dataSymbol Parameter Conditions Min Ty ..
PUMB3 ,R1 = 4.7 kOhmLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PUMB30 ,PNP/PNP double resistor-equipped transistors; R1 = 2.2 kOhm, R2 = openLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
PUMD10 ,NPN/PNP resistor-equipped transistorsAPPLICATIONS PIN DESCRIPTION1, 4 emitter TR1; TR2• Especially suitable for spacereduction in portab ..
PUMD12 ,NPN/PNP resistor-equipped transistors; R1 = 47 k惟, R2 = 47 k惟Features and benefits 100 mA output current capability Reduces component count Built-in bias re ..
R2880 , FAST ETHERNET RISC PROCESSOR
R2A20113SP , Critical Conduction Mode PFC Control IC
R2A20113SP , Critical Conduction Mode PFC Control IC
R2A20114 , Continuous Conduction Mode Interleaving PFC Control IC
R2J20605ANP#G3 , Integrated Driver - MOS FET (DrMOS)
R2J20652ANP , Integrated Driver - MOS FET (DrMOS)
PUMB20
PNP/PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm
Product profile1.1 General descriptionPNP/PNP resistor-equipped transistors
1.2 Features Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place cost
1.3 Applications Low current peripheral driver Control of IC inputs Replacement of general-purpose transistors in digital applications
1.4 Quick reference data
PEMB20; PUMB20
PNP/PNP resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ
Rev. 03 — 1 September 2009 Product data sheet
Table 1. Product overviewPEMB20 SOT666 - PEMD20 PEMH20
PUMB20 SOT363 SC-88 PUMD20 PUMH20
Table 2. Quick reference dataVCEO collector-emitter voltage open base - - −50 V output current (DC) - - −100 mA bias resistor 1 (input) 1.54 2.2 2.86 kΩ
R2/R1 bias resistor ratio 0.8 1 1.2
NXP Semiconductors PEMB20; PUMB20
PNP/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ Pinning information Ordering information Marking[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Table 3. Pinning GND (emitter) TR1 input (base) TR1 output (collector) TR2 GND (emitter) TR2 input (base) TR2 output (collector) TR1 001aab555
006aaa212 13
Table 4. Ordering informationPEMB20 - plastic surface mounted package; 6 leads SOT666
PUMB20 SC-88 plastic surface mounted package; 6 leads SOT363
Table 5. Marking codesPEMB20 6G
PUMB20 B9*
NXP Semiconductors PEMB20; PUMB20
PNP/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ Limiting values[1] Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
Thermal characteristics[1] Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
Table 6. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
Per transistorVCBO collector-base voltage open emitter - −50 V
VCEO collector-emitter voltage open base - −50 V
VEBO emitter-base voltage open collector - −10 V input voltage
positive - +10 V
negative - −12 V output current (DC) - −100 mA
ICM peak collector current - −100 mA
Ptot total power dissipation Tamb ≤ 25°C
SOT363 [1]- 200 mW
SOT666 [1][2]- 200 mW
Tstg storage temperature −65 +150 °C junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Per devicePtot total power dissipation Tamb ≤ 25°C
SOT363 [1]- 300 mW
SOT666 [1][2]- 300 mW
Table 7. Thermal characteristics
Per transistorRth(j-a) thermal resistance from
junction to ambient
Tamb ≤ 25°C
SOT363 [1]- - 625 K/W
SOT666 [1][2]- - 625 K/W
Per deviceRth(j-a) thermal resistance from
junction to ambient
Tamb ≤ 25°C
SOT363 [1]- - 416 K/W
SOT666 [1][2]- - 416 K/W
NXP Semiconductors PEMB20; PUMB20
PNP/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ Characteristics
Table 8. CharacteristicsTamb = 25 °C unless otherwise specified
Per transistorICBO collector-base cut-off
current
VCB = −50 V; IE = 0 A - - −100 nA
ICEO collector-emitter
cut-off current
VCE = −30 V; IB = 0 A - - −1 μA
VCE = −30 V; IB = 0 A;= 150°C −50 μA
IEBO emitter-base cut-off
current
VEB = −5 V; IC = 0 A - - −2mA
hFE DC current gain VCE = −5 V; IC = −20 mA 30 - -
VCEsat collector-emitter
saturation voltage
IC = −10 mA; IB = −0.5 mA - - −150 mV
VI(off) off-state input voltage VCE = −5 V; IC = −1 mA - −1.2 −0.5 V
VI(on) on-state input voltage VCE = −0.3 V; IC = −20 mA −2 −1.6 - V bias resistor 1 (input) 1.54 2.2 2.86 kΩ
R2/R1 bias resistor ratio 0.8 1 1.2 collector capacitance VCB = −10 V; IE = ie = 0 A;
f=1MHz
--3 pF
NXP Semiconductors PEMB20; PUMB20
PNP/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
NXP Semiconductors PEMB20; PUMB20
PNP/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ Package outline
Plastic surface-mounted package; 6 leads SOT363
