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PUMB10
PNP/PNP resistor-equipped transistors; R1 = 2.2 k惟, R2 = 47 k惟
1. Product profile
1.1 General descriptionPNP/PNP Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic
packages.
1.2 Features and benefits
1.3 Applications Low current peripheral driver Control of IC inputs Replaces general-purpose transistors in digital applications
1.4 Quick reference data
PEMB10; PUMB10
PNP/PNP resistor-equipped transistors;
R1 = 2.2 k, R2 = 47 k
Rev. 3 — 3 January 2012 Product data sheet
Table 1. Product overviewPEMB10 SOT666 - PEMD10 PEMH10 ultra small and flat lead
PUMB10 SOT363 SC-88 PUMD10 PUMH10 very small 100 mA output current capability Reduces component count Built-in bias resistors Reduces pick and place costs Simplifies circuit design AEC-Q101 qualified
Table 2. Quick reference data
Per transistorVCEO collector-emitter voltage open base - - 50 V output current - - 100 mA bias resistor 1 (input) 1.54 2.20 2.86 k
R2/R1 bias resistor ratio 17 21 26
NXP Semiconductors PEMB10; PUMB10
PNP/PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k
2. Pinning information
3. Ordering information
4. Marking[1] * = placeholder for manufacturing site code.
Table 3. Pinning
Table 4. Ordering informationPEMB10 - plastic surface-mounted package; 6 leads SOT666
PUMB10 SC-88 plastic surface-mounted package; 6 leads SOT363
Table 5. Marking codesPEMB10 Z5
PUMB10 B*0
NXP Semiconductors PEMB10; PUMB10
PNP/PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k
5. Limiting values[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
Table 6. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
Per transistorVCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 5V input voltage
positive - +5 V
negative - 12 V output current - 100 mA
ICM peak collector current - 100 mA
Ptot total power dissipation Tamb25C [1]
PEMB10 (SOT666) [2] -200 mW
PUMB10 (SOT363) - 200 mW
Per devicePtot total power dissipation Tamb25C [1]
PEMB10 (SOT666) [2] -300 mW
PUMB10 (SOT363) - 300 mW junction temperature - 150 C
Tamb ambient temperature 65 +150 C
Tstg storage temperature 65 +150 C
NXP Semiconductors PEMB10; PUMB10
PNP/PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k
6. Thermal characteristics[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
Table 7. Thermal characteristics
Per transistorRth(j-a) thermal resistance from
junction to ambient
in free air [1]
PEMB10 (SOT666) [2] --625 K/W
PUMB10 (SOT363) - - 625 K/W
Per deviceRth(j-a) thermal resistance from
junction to ambient
in free air [1]
PEMB10 (SOT666) [2] --417 K/W
PUMB10 (SOT363) - - 417 K/W
NXP Semiconductors PEMB10; PUMB10
PNP/PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k
NXP Semiconductors PEMB10; PUMB10
PNP/PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k
7. Characteristics[1] Characteristics of built-in transistor.
Table 8. CharacteristicsTamb =25 C unless otherwise specified.
Per transistorICBO collector-base
cut-off current
VCB= 50 V; IE =0A - - 100 nA
ICEO collector-emitter
cut-off current
VCE= 30 V; IB =0A - - 100 nA
VCE= 30 V; IB =0A; = 150C 5 A
IEBO emitter-base
cut-off current
VEB= 5V; IC =0A - - 180 A
hFE DC current gain VCE= 5V; IC= 10 mA 100 - -
VCEsat collector-emitter
saturation voltage= 5mA; IB= 0.25 mA - - 100 mV
VI(off) off-state input
voltage
VCE= 5V; IC= 100 A- 0.6 0.5 V
VI(on) on-state input
voltage
VCE= 0.3 V; IC= 5mA 1.1 0.75- V bias resistor 1 (input) 1.54 2.20 2.86 k
R2/R1 bias resistor ratio 17 21 26 collector capacitance VCB= 10 V; IE =ie =0A; 1MHz
--3 pF transition frequency VCB= 5V; IC= 10 mA; = 100 MHz
[1]- 180 - MHz
NXP Semiconductors PEMB10; PUMB10
PNP/PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 kNXP Semiconductors PEMB10; PUMB10
PNP/PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k
8. Test information
8.1 Quality informationThis product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
