PU3117 ,Composite DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitCollector-em ..
PU3120 ,V(cbp): 60V; V(ceo): 60V; V(ebo): 5V; 15W; silicon NPN triple-diffused planar darlington transistor arrayAbsolute Maximum Ratings (Tc=25°C) l E .' Emitterl B . BaseItem Symbol Value Umt I C : Collectorl l ..
PU3120 ,V(cbp): 60V; V(ceo): 60V; V(ebo): 5V; 15W; silicon NPN triple-diffused planar darlington transistor arrayAbsolute Maximum Ratings (Tc=25°C) l E .' Emitterl B . BaseItem Symbol Value Umt I C : Collectorl l ..
PU3120 ,V(cbp): 60V; V(ceo): 60V; V(ebo): 5V; 15W; silicon NPN triple-diffused planar darlington transistor arrayFeatures 1 'tei-r-l'-,.":-.-.,')-) I ()8-'lel,q High DC current gain (hrs) " jgi .Hiboswmf , I -o . ..
PU3124 ,V(cbo): 60V; V(ceo): 60V; V(ebo): 5V; 8A; 15W; silicon NPN triple-diffused planar darlington type power amplifierAbsolute Maximum Ratings (Tc--- 25°C)Item Symbol Value UnitCollector-base voltage V(‘BO 60 i 10 VCo ..
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PU3117
