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Partno	Mfg	Dc	Qty	Available	Descript
PTF211802A	INFINEON	N/a	29	avai	LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz
PTF211802E	INFINEON	N/a	7	avai	LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz

PTF211802A ,LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHzapplications from 2110 to• Typical two–carrier WCDMA performance2170 MHz. Full gold metallization e ..
PTF211802E ,LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHzCharacteristics at T = 25°C unless otherwise indicatedCASEWCDMA Measurements (not subject to produc ..
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PTF211802A-PTF211802E
LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz
LDMOS RF Power Field Effect Transistor180 W, 2110–2170 MHz
Description
The PTF211802 is a 180 W, internally matched, laterally double–diffused,
GOLDMOS push–pull FET intended for WCDMA applications from 2110 to
FeaturesBroadband internal matchingTypical two–carrier WCDMA performance
- Average output power = 38 W
- Gain = 15 dB- Efficiency = 25%
- IM3 = –37 dBc
- ACPR < –42 dBcTypical CW performance
- Output power at P–1dB = 180 W- Efficiency = 50%Integrated ESD protection: Human Body
Model, Class 1 (minimum)Excellent thermal stabilityLow HCI driftCapable of handling 10:1 VSWR @ 28 V,
180 W (CW) output power
RF Characteristics at TCASE = 25°C unless otherwise indicated
WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 2.0 A, POUT = 38 W AVG
f1 = 2140 MHz, f2 = 2150 MHz, two–carrier 3GPP, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF
CharacteristicSymbolMinTypMaxUnits
Intermodulation DistortionIM3—–37—dBc
GainGps—15—dB
Drain EfficiencyhD—25—%
Two–Tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 2.0 A, POUT = 60 W PEP, f = 2110 MHz, tone spacing = 5 MHz
CharacteristicSymbolMinTypMaxUnits
GainGps12.515—dB
PTF211802A
Package 20275
PTF211802
ESD: Electrostatic discharge sensitive device — observe handling precautions!
PTF211802E
Package 30275
Typical Performance (data taken in a production test fixture)
DC Characteristics at TCASE = 25°C unless otherwise indicated
CharacteristicConditionsSymbolMinTypMaxUnits
Drain–Source Breakdown VoltageVGS = 0 V, IDS = 10 µA/sideV(BR)DSS65——V
Drain Leakage CurrentVDS = 28 V, VGS = 0 VIDSS——1.0µA
On–State ResistanceVGS = 10 V, VDS = 0.1 VRDS(on)—0.1—W
Operating Gate VoltageVDS = 28 V, IDQ = 1.0 A/sideVGS2.53.24V
Gate Leakage CurrentVGS = 10 V, VDS = 0 VIGSS——1.0µA
Maximum Ratings
ParameterSymbolValueUnit
Drain–Source VoltageVDSS65V
Gate–Source VoltageVGS–0.5 to +12V
Junction TemperatureTJ200°C
Total Device DissipationPTF211802APD498W
Above 25°C derate by2.85W/°C
Total Device DissipationPTF211802EPD647W
Above 25°C derate by3.70W/°C
Storage Temperature RangeTSTG–40 to +150°C
Thermal ResistancePTF211802ARqJC0.35°C/W
(TCASE = 70°C, 130 W CW)PTF211802ERqJC0.27°C/W
Typical Performance (cont.)
Typical Performance (cont.)
Circuit Assembly Information
Reference Circuit
Reference Circuit Schematic for 2140 MHz
Reference Circuit1 (not to scale)
Reference Circuit (cont.)

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