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Partno	Mfg	Dc	Qty	Available	Descript
PTF211301A	INFINEON	N/a	26	avai	LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz

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PTF211301A
LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz
PTF211301A
Package 20260
PTF211301
Description
The PTF211301 is a 130–W, internally matched GOLDMOS FET intended
for WCDMA applications. It is characaterized for single– and two–carrierWCDMA operation from 2110 to 2170 MHz. Full gold metallization ensures
excellent device lifetime and reliability.
FeaturesBroadband internal matchingTypical two–carrier WCDMA performance at2140 MHz
- Average output power = 28 W
- Linear Gain = 13.5 dB
- Efficiency = 25%
- Intermodulation distortion = –37 dBc- Adjacent channel power = –42 dBcTypical CW performance, 2170 MHz, 28 V
- Output power at P–1dB = 148 W
- Efficiency = 50%Integrated ESD protection: Human Body
Model, Class 1 (minimum)Excellent thermal stability, low HCI driftCapable of handling 10:1 VSWR @ 28 V,
130 W (CW) output power
RF Characteristics at TCASE = 25°C unless otherwise indicated
WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 1.5 A, POUT = 28 W average
f1 = 2140 MHz, f2 = 2150 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF
CharacteristicSymbolMinTypMaxUnits
Intermodulation Distortion IMD—–37—dBc
GainGps—13.5—dB
Drain EfficiencyhD—25—%
Two–Tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 1.5 A, POUT = 120 W PEP, f = 2170 MHz, tone spacing = 1 MHz
CharacteristicSymbolMinTypMaxUnits
GainGps1213.5—dB
Drain EfficiencyhD3437—%
LDMOS RF Power Field Effect Transistor130 W, 2110–2170 MHz
DC Characteristics at TCASE = 25°C unless otherwise indicated
CharacteristicConditionsSymbolMinTypMaxUnits
Drain–Source Breakdown VoltageVGS = 0 V, IDS = 10 µAV(BR)DSS65——V
Drain Leakage CurrentVDS = 28 V, VGS = 0 VIDSS——1.0µA
On–State ResistanceVGS = 10 V, VDS = 0.1 VRDS(on)—0.07—W
Operating Gate VoltageVDS = 28 V, IDQ = 1.5 AVGS2.53.24.0V
Gate Leakage CurrentVGS = 10 V, VDS = 0 VIGSS——1.0µA
Maximum Ratings
ParameterSymbolValueUnit
Drain–Source VoltageVDSS65V
Gate–Source VoltageVGS–0.5 to +12V
Junction TemperatureTJ200°C
Total Device DissipationPD350W
Above 25°C derate by2.0W/°C
Storage Temperature RangeTSTG–40 to +150°C
Thermal Resistance (TCASE = 70°C, 130 W CW)RqJC0.50°C/W
Typical Performance (data taken in a production test fixture)
Typical Performance (cont.)
Typical Performance (cont.)
Test Circuit
Reference Circit Schematic for f = 2140 MHz
Circuit Assembly Information
Test Circuit (cont.)

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