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PTF210451E
LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz
PTF210451EPackage 30265
LDMOS RF Power Field Effect Transistor45 W, 2110–2170 MHz
DescriptionThe PTF210451 is a 45 W internally matched GOLDMOS FET
intended for WCDMA applications from 2110 to 2170 MHz. Full goldmetallization ensures excellent device lifetime and reliability.
FeaturesInternal matching for wideband performanceTypical two–carrier WCDMA performance- Average output power = 11.5 W
- Gain = 14 dB
- Efficiency = 27%
- IM3 = –37 dBcTypical CW performance
- Output power at P–1dB = 50 W
- Linear gain = 14 dB
- Efficiency = 53%Integrated ESD protection: Human Body Model,Class 1 (minimum)Excellent thermal stabilityLow HCI DriftCapable of handling 10:1 VSWR @ 28 V,
45 W (CW) output power
RF Performance at TCASE = 25°C unless otherwise indicated
WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)VDD = 28 V, IDQ = 500 mA, POUT = 11.5 W AVG
f1 = 2140 MHz, f2 = 2150 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF
CharacteristicSymbolMinTypMaxUnitsIntermodulation Distortion IMD—–37—dBc
GainGps—14—dB
Drain EfficiencyhD—27—%
Two–Tone Measurements (tested in Infineon test fixture)VDD = 28 V, IDQ = 500 mA, POUT = 45 W PEP, f = 2170 MHz, Tone Spacing = 1 MHz
CharacteristicSymbolMinTypMaxUnitsGainGps1314—dB
ESD: Electrostatic discharge sensitive device — observe handling precautions!
DC Characteristics at TCASE = 25°C unless otherwise indicated
CharacteristicConditionsSymbolMinTypMaxUnitsDrain–Source Breakdown VoltageVGS = 0 V, ID = 10 µAV(BR)DSS65——V
Drain Leakage CurrentVDS = 28 V, VGS = 0 VIDSS——1.0µA
On–State ResistanceVGS = 10 V, VDS = 0.1 VRDS(on)—0.2—W
Operating Gate VoltageVDS = 28 V, IDQ = 500 mAVGS2.53.24.0V
Gate Leakage Current VGS = 10 V, VDS = 0 VIGSS——1.0µA
Maximum Ratings
ParameterSymbolValueUnitDrain–Source VoltageVDSS65V
Gate–Source VoltageVGS–0.5 to +12V
Junction TemperatureTJ200°C
Total Device DissipationPD175W
Above 25°C derate by1.0W/°C
Storage Temperature RangeTSTG–40 to +150°C
Thermal Resistance (TCASE = 70°C, 45 W CW)RqJC1.0°C/W
Typical Performance (data taken in production test fixture)
Typical Performance (cont.)
Typical Performance (cont.)
Test CircuitTest Circuit Schematic for 2170 MHz
Circuit Assembly Information
Test Circuit (cont.)Reference Circuit1 (not to scale)
