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PTF210301A-PTF210301E
LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz
PTF210301APackage 20265
PTF210301E
Package 30265
PTF210301
DescriptionThe PTF210301 is a 30 W, internally matched GOLDMOS FET intended
for WCDMA applications from 2110 to 2170 MHz. Full gold metallizationensures excellent device lifetime and reliability.
FeaturesBroadband internal matchingTypical two–carrier WCDMA performance- Average output power = 7.0 W
- Gain = 16 dB
- Efficiency = 25%
- IM3 = –37 dBcTypical CW performance- Output power at P–1dB = 36 W
- Gain = 15 dB
- Efficiency = 53%Integrated ESD protection: Human BodyModel, Class 1 (minimum)Excellent thermal stabilityLow HCI driftCapable of handling 10:1 VSWR @ 28 V,30 W (CW) output power
RF Characteristics at TCASE = 25°C unless otherwise indicated
WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)VDD = 28 V, IDQ = 380 mA, POUT = 36.5 dBm
f1 = 2140 MHz, f2 = 2150 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF
CharacteristicSymbolMinTypMaxUnitsIntermodulation Distortion IMD—–44—dBc
GainGps—16—dB
Drain EfficiencyhD—20—%
Two–Tone Measurements (tested in Infineon test fixture)VDD = 28 V, IDQ = 380 mA, P OUT = 9 W PEP, f = 2170 MHz, tone spacing = 1 MHz
CharacteristicSymbolMinTypMaxUnitsGainGps14.516—dB
Drain EfficiencyhD1518—%
LDMOS RF Power Field Effect Transistor30 W, 2110–2170 MHz
DC Characteristics at TCASE = 25°C unless otherwise indicated
CharacteristicConditionsSymbolMinTypMaxUnitsDrain–Source Breakdown VoltageVGS = 0 V, IDS = 10 µAV(BR)DSS65——V
Drain Leakage CurrentVDS = 28 V, VGS = 0 VIDSS——1.0µA
On–State ResistanceVGS = 10 V, VDS = 0.1 VRDS(on)—0.26—W
Operating Gate VoltageVDS = 28 V, IDQ = 380 mAVGS2.53.24V
Gate Leakage CurrentVGS = 10 V, VDS = 0 VIGSS——1.0µA
Maximum Ratings
ParameterSymbolValueUnitDrain–Source VoltageVDSS65V
Gate–Source VoltageVGS–0.5 to +12V
Junction TemperatureTJ200°C
Total Device DissipationPTF210301APD116W
Above 25°C derate by0.67W/°C
Total Device DissipationPTF210301EPD145W
Above 25°C derate by0.83W/°C
Storage Temperature RangeTSTG–40 to +150°C
Thermal ResistancePTF210301ARqJC1.5°C/W
(TCASE = 70°C, 30 W CW)PTF210301ERqJC1.2°C/W
Typical Performance (data taken in a production test fixture)
Typical Performance (cont.)
Typical Performance (cont.)
Test Circit Schematic for f = 2170 MHz
Test Circuit
Test Circuit (cont.)Reference Circuit1 (not to scale)
