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PTF191601E
LDMOS RF Power Field Effect Transistor 160 W/ 1930-1990 MHz
Advance InformationPTF191601
LDMOS RF Power Field Effect Transistor160 W, 1930 – 1990 MHz
FeaturesBroadband internal matchingTypical EDGE performance- Average output power = 62 W
- Gain = 14 dB
- Efficiency = 32%
- EVM = 1.7%Typical CW performance- Output power at P–1dB = 180 W
- Gain = 13 dB
- Efficiency = 47%Integrated ESD protection: Human BodyModel, Class 1 (minimum)Excellent thermal stabilityLow HCI driftCapable of handling 10:1 VSWR @ 28 V,160 W (CW) output power
ESD: Electrostatic discharge sensitive device—observe handling precautions!
DescriptionThe PTF191601 is a 160 W, internally matched GOLDMOS FET intended
for GSM and EDGE applications in the 1930 to 1990 MHz band. Full gold
metallization ensures excellent device lifetime and reliability.
PTF191601E
Package 30260
RF Characteristics at TCASE = 25°C unless otherwise indicated
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)VDD = 28 V, IDQ = 2.2 A, POUT = 62 W, f = 1989.8 MHz
CharacteristicSymbolMinTypMaxUnitsError Vector MagnitudeEVM (RMS)—1.7—%
Modulation Spectrum @ 400 kHzACPR—–60—dBc
Modulation Spectrum @ 600 kHzACPR—–73—dBc
GainGps—14—dB
Drain EfficiencyhD—32—%
Two–Tone Measurements (tested in Infineon test fixture)VDD = 28 V, IDQ = 2.2 A, POUT = 160 W PEP, f = 1990 MHz, tone spacing = 1 MHz
CharacteristicSymbolMinTypMaxUnitsGainGps—14—dB
DC Characteristics at TCASE = 25°C unless otherwise indicated
CharacteristicConditionsSymbolMinTypMaxUnitsDrain–Source Breakdown VoltageVGS = 0 V, IDS = 10 µAV(BR)DSS65——V
Drain Leakage CurrentVDS = 28 V, VGS = 0 VIDSS——1.0µA
On–State ResistanceVGS = 10 V, VDS = 0.1 VRDS(on)—0.07—W
Operating Gate VoltageVDS = 28 V, IDQ = 2.2 AVGS2.53.24.0V
Gate Leakage CurrentVGS = 10 V, VDS = 0 VIGSS——1.0µA
Maximum Ratings
ParameterSymbolValueUnitDrain–Source VoltageVDSS65V
Gate–Source VoltageVGS–0.5 to +12V
Operating Junction TemperatureTJ200°C
Total Device DissipationPD583W
Above 25°C derate by3.33W/°C
Storage Temperature RangeTSTG–40 to +150°C
Thermal Resistance (TCASE = 70°C, 130 W CW)RqJC0.30°C/W
Ordering Information
Package Outline SpecificationsFind the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/products
GOLDMOS® is a registered trademark of Infineon Technologies AG.
Edition 04-03-17
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München, Germany
© Infineon Technologies AG 2004.
All Rights Reserved.
Attention please!The information herein is given to describe certain components and shall not be considered as a guarantee of
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non–infringement, regarding circuits,descriptions and charts stated herein.
InformationFor further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office (www.infineon.com/rfpower).
WarningsDue to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life–support devices or systems with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life–support
PTF191601
Limited Distribution
Revision History:04-03-17Developmental Data Sheet
Previous Version:none
This datasheet has been downloaded from:
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Datasheets for electronic components.
