PTF180901E ,GSM/EDGE RF Power FETFeatures–Gain = 15 dB Optimized for bandwidths 1805 MHz – 1880 MHz and – Efficiency = 36%1930 MHz – ..
PTF180901F ,GSM/EDGE RF Power FETProduct BriefPTF180901GSM/EDGE RF Power FETThe PTF180901 PerformanceOne of our new line of GSM/EDGE ..
PTF191601E ,LDMOS RF Power Field Effect Transistor 160 W/ 1930-1990 MHzapplications in the 1930 to 1990 MHz band. Full gold• Typical EDGE performancemetallization ensure ..
PTF210301A ,LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHzCharacteristic Symbol Min Typ Max UnitsIntermodulation Distortion IMD — –44 — dBcGain G — 16 — dBp ..
PTF210301E ,LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHzapplications from 2110 to 2170 MHz. Full gold metallization• Typical two–carrier WCDMA performancee ..
PTF210301E ,LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHzCharacteristics at T = 25°C unless otherwise indicatedCASEWCDMA Measurements (not subject to produc ..
R1163N301D , 3-MODE 150mA LDO REGULATOR with the Reverse Current Protection
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R1170H151B , 800mA LDO REGULATOR
R1170H151B-T1 , 800mA LDO REGULATOR
R1170H161B-T1 , 800mA LDO REGULATOR
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PTF180901E-PTF180901F
GSM/EDGE RF Power FET
The PTF180901
One of our new line of GSM/EDGE/CDMA2000 devices, the PTF180901
is optimized for the DCS and PCS bands. This device operates at 47%
efficiency with 13.5 dB of gain and produces 115W, P-1dB. This high-gain rformanceTypical EDGE performance
–Average output power = 35 W
–Gain = 14.5 dB
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© Infineon Technologies AG 2004.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components
and shall not be considered as a guarantee of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not
limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Information
For further information on technology, delivery terms
Warnings
Due to technical requirements components may contain dangerous
substances. For information on the types in question please contact
your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-
support devices or systems with the express written approval of
Infineon Technologies, if a failure of such components can reason-
ably be expected to cause the failure of that life-support device or
system, or to affect the safety or effectiveness of that device or sys-
tem. Life support devices or systems are intended to be implanted rformance
Characteristics
Application Example
Two-Tone Measurements
VDD = 28 V, IDQ = 1.2 A, POUT = 90 W PEP, fC = 1930 MHz, Tone Spacing = 100 kHz
This datasheet has been downloaded from:
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Datasheets for electronic components.
