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Partno	Mfg	Dc	Qty	Available	Descript
PTF180101S	INFINEON	N/a	2	avai	LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz

PTF180101S ,LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHzapplications in the DCS/PCS band. Full gold metallization - Average output power = 4.0 Wensures exc ..
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PTF180101S
LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz
PTF180101
FeaturesTypical EDGE performance
- Average output power = 4.0 W- Gain = 19.0 dB
- Efficiency = 28%
- EVM = 1.1 %Typical WCDMA performance
- Average output power = 1.8 W
- Gain = 18.0 dB
- Efficiency = 20%
- ACPR = –45 dBcTypical CW performance
- Output power at P–1dB = 15 W- Efficiency = 50%Integrated ESD protection:Human Body Model Class 1 (minimum)Excellent thermal stabilityLow HCI driftCapable of handling 10:1 VSWR @ 28 V,
10 W (CW) output power
RF Characteristics, EDGE Operation at TCASE = 25°C unless otherwise indicated
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 180 mA, POUT = 4 W, f = 1989.8 MHz
CharacteristicSymbolMinTypMaxUnits
Error Vector MagnitudeEVM (RMS)—1.1—%
Modulation Spectrum @ 400 kHzACPR—–60—dBc
Modulation Spectrum @ 600 kHzACPR—–70—dBc
GainGps—19—dB
Drain EfficiencyhD—28—%
Two–Tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 180 mA, POUT = 10 W PEP, f = 1990 MHz, tone spacing = 1 MHz
CharacteristicSymbolMinTypMaxUnits
GainGps1819—dB
LDMOS RF Power Field Effect Transistor10 W, 1805–1880 MHz, 1930–1990 MHz
10 W, 2110–2170 MHz
Description
The PTF180101 is a 10 W, internally–matched GOLDMOS FET device in-
tended for EDGE applications in the DCS/PCS band. Full gold metallizationensures excellent device lifetime and reliability.
ESD: Electrostatic discharge sensitive device — observe handling precautions!
PTF180101SPackage 32259
RF Characteristics, WCDMA Operation at TCASE = 25°C unless otherwise indicated
WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 135 mA, POUT = 1.8 W,
f = 2170 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8.7 dB @ 0.01% CCDF
CharacteristicSymbolMinTypMaxUnits
Adjacent Channel Power RatioACPR—–45—dBc
GainGps—18—dB
Drain EfficiencyhD—20—%
Two–Tone Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 135 mA, POUT = 10 W PEP, f = 2170 MHz, tone spacing = 1 MHz
CharacteristicSymbolMinTypMaxUnits
GainGps—18—dB
Drain Efficiency @ –30 dBc IM3hD—37—%
Intermodulation Distortion IMD—–30—dBc
DC Characteristics at TCASE = 25°C unless otherwise indicated
CharacteristicConditionsSymbolMinTypMaxUnits
Drain–Source Breakdown VoltageVGS = 0 V, IDS = 10 µAV(BR)DSS65——V
Drain Leakage CurrentVDS = 28 V, VGS = 0 VIDSS——1.0µA
On–State ResistanceVGS = 10 V, VDS = 0.1 ARDS(on)—0.83—W
Operating Gate VoltageVDS = 28 V, IDQ = 180 mAVGS2.53.24.0V
Gate Leakage CurrentVGS = 10 V, VDS = 0 VIGSS——1.0µA
Maximum Ratings at TCASE = 25°C unless otherwise indicated
ParameterSymbolValueUnit
Drain–Source VoltageVDSS65V
Gate–Source VoltageVGS–0.5 to +12V
Junction TemperatureTJ200°C
Total Device DissipationPD58W
Above 25°C derate by0.333W/°C
Storage Temperature RangeTSTG–40 to +150°C
Thermal Resistance (TCASE = 70°C, 10 W CW)RqJC3.0°C/W
Typical Performance measurements taken in broadband test fixture
Typical Performance (cont.)
Typical Performance (cont.)
Typical Performance, WCDMA Operation

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