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PTF080901-PTF080901E-PTF080901F
LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz
PTF080901E
Package 30248
PTF080901
LDMOS RF Power Field Effect Transistor90 W, 869–960 MHz
FeaturesBroadband internal matchingTypical EDGE performance- Average output power = 45 W
- Gain = 18 dB
- Efficiency = 40%Typical CW performance
- Output power at P–1dB = 120 W- Gain = 17 dB
- Efficiency = 60%Integrated ESD protection: Human Body
Model, Class 1 (minimum)Excellent thermal stabilityLow HCI driftCapable of handling 10:1 VSWR @ 28 V,
90 W (CW) output power
ESD: Electrostatic discharge sensitive device—observe handling precautions!
DescriptionThe PTF080901 is a 90 W, internally matched GOLDMOS FET intended
for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold
metallization ensures excellent device lifetime and reliability.
RF Characteristics at TCASE = 25°C unless otherwise indicated
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)VDD = 28 V, IDQ = 700 mA, POUT = 45 W, f = 959.8 MHz
CharacteristicSymbolMinTypMaxUnitError Vector MagnitudeEVM (RMS)—2.5—%
Modulation Spectrum @ 400 kHzACPR—–62—dBc
Modulation Spectrum @ 600 kHzACPR—–74—dBc
GainGps—18—dB
Drain EfficiencyhD—40—%
Two–Tone Measurements (tested in Infineon test fixture)VDD = 28 V, IDQ = 650 mA, POUT = 90 W PEP, f = 960 MHz, tone spacing = 1 MHz
CharacteristicSymbolMinTypMaxUnitGainGps1718—dB
PTF080901F
Package 31248
Typical Performance (measurements taken in production test fixture)
DC Characteristics at TCASE = 25°C unless otherwise indicated
CharacteristicConditionsSymbolMinTypMaxUnitDrain–Source Breakdown VoltageVGS = 0 V, IDS = 10 µAV(BR)DSS65——V
Drain Leakage CurrentVDS = 28 V, VGS = 0 VIDSS——1.0µA
On–State ResistanceVGS = 10 V, VDS = 0.1 VRDS(on)—0.1—V
Operating Gate VoltageVDS = 28 V, IDQ = 650 mAVGS2.53.24V
Gate Leakage CurrentVGS = 10 V, VDS = 0 VIGSS——1.0µA
Maximum Ratings
ParameterSymbolValueUnitDrain–Source VoltageVDSS65V
Gate–Source VoltageVGS–0.5 to +12V
Junction TemperatureTJ200°C
Total Device DissipationPD335W
Above 25°C derate by1.9W/°C
Storage Temperature RangeTSTG–40 to +150°C
Thermal Resistance (TCASE = 70°C)RqJC0.52°C/W
Typical Performance (cont.)
Typical Performance (cont.)
Typical Performance (cont.)
Broadband Circuit Impedance
Z SourceZ Load
Test CircuitTest Circuit Schematic for 960 MHz
Circuit Assembly Information
