PTF080601E ,LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHzapplications in the 860 to 960 MHz band. Full gold• Typical EDGE performancemetallization ensures ..
PTF080601F ,LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHzCharacteristic Symbol Min Typ Max UnitsError Vector Magnitude EVM (RMS) — 2.0 — %Modulation Spectru ..
PTF080901 ,LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHzCharacteristics at T = 25°C unless otherwise indicatedCASEEDGE Measurements (not subject to product ..
PTF080901E ,LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHzCharacteristic Symbol Min Typ Max UnitError Vector Magnitude EVM (RMS) — 2.5 — %Modulation Spectrum ..
PTF080901F ,LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHzapplications in the 860 to 960 MHz band. Full gold• Typical EDGE performancemetallization ensures ..
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PTF080601E-PTF080601F
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
PTF080601APackage 20248
PTF080601E
Package 30248
PTF080601F
Package 31248
Developmental PTF080601
LDMOS RF Power Field Effect Transistor60 W, 860–960 MHz
FeaturesBroadband internal matchingTypical EDGE performance- Average output power = 30 W
- Gain = 18 dB
- Efficiency = 40%Typical CW performance
- Output power at P–1dB = 90 W- Gain = 17 dB
- Efficiency = 60%Integrated ESD protection: Human Body
Model, Class 1 (minimum)Excellent thermal stabilityLow HCI driftCapable of handling 10:1 VSWR @ 28 V,60 W (CW) output power
RF Characteristics at TCASE = 25°C unless otherwise indicated
Two-Tone Measurements (tested in Infineon test fixture)VDD = 28 V, IDQ = 550 mA, POUT = 60 W PEP, fC = 960 MHz, tone spacing = 1000 kHz
CharacteristicSymbolMinTypMaxUnitsGainGps—18—dB
Drain EfficiencyhD—42—%
Intermodulation Distortion IMD—–32—dBc
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)VDD = 28 V, IDQ = 550 mA, POUT = 30 W, f = 959.8 MHz
CharacteristicSymbolMinTypMaxUnitsError Vector MagnitudeEVM (RMS)—2.0—%
Modulation Spectrum @ 400 KHzACPR—–61—dBc
Modulation Spectrum @ 600 KHzACPR—–74—dBc
DescriptionThe PTF080601 is a 60–W, internally matched GOLDMOS FET intended
for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold
DC Characteristics at TCASE = 25°C unless otherwise indicated
CharacteristicConditionsSymbolMinTypMaxUnitsDrain-Source Breakdown VoltageVGS = 0 V, IDS = 10 µAV(BR)DSS—65—V
Drain Leakage CurrentVDS = 28 V, VGS = 0 VIDSS—1.0—µA
On-State ResistanceVGS = 10 V, IDS = 1 ARDS(on)—0.1—W
Operating Gate VoltageVDS = 28 V, IDQ = 550 mAVGS—3.2—V
Gate Leakage CurrentVGS = 10 V, VDS = 0 VIGSS——1.0µA
Maximum Ratings
ParameterSymbolValueUnitDrain-Source VoltageVDSS65V
Gate-Source VoltageVGS–0.5 to +12V
Junction TemperatureTJ200°C
Total Device DissipationPTF080601APD180W
Above 25°C derate by1.03W/°C
Total Device DissipationPTF080601EPD195W
Above 25°C derate by1.11W/°C
Storage Temperature RangeTSTG–40 to +150°C
Thermal Resistance (TCASE = 70°C)PTF080601ARqJC0.972°C/W
PTF080601ERqJC0.897°C/W
TypePackage OutlinePackage DescriptionMarkingPTF080601A20248Standard ceramic, flangePTF080601A
PTF080601E30248Thermally enhanced, flangePTF080601E
PTF080601F31249Thermally enhanced, no flangePTF080601F
Find the latest and most complete information about products and packaging at the Infineon Internet pagehttp://www.infineon.com/rfpower
Package Outline Specifications
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Package Outline Specifications
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Package Outline Specifications
Edition 2003-12-05
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München, Germany
© Infineon Technologies AG 2003.
All Rights Reserved.
Attention please!The information herein is given to describe certain components and shall not be considered as a guarantee of
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
InformationFor further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office (www.infineon.com/rfpower).
WarningsDue to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written approval ofInfineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support
device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are
PTF080601
Revision History:2003-12-05Developmental
Previous Version:none
