PSMNR90-30BL Fast Delivery |IC PHOENIX CO.,LIMITED

PSMNR90-30BL ,N-channel 30 V 1.0 m鈩?logic level MOSFET in D2PAKApplicationsDC-to-DC converters•• Load switichingMotor control•• Server power supplies4. Quick refe ..
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PSMNR90-30BL
N-channel 30 V 1.0 m鈩?logic level MOSFET in D2PAK
PSMNR90-30BLN-channel 30 V 1.0 mΩ logic level MOSFET in D2PAK2 April 2014 Product data sheet General description
Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment. Features and benefits High efficiency due to low switching and conduction losses• Suitable for logic level gate drive sources Applications DC-to-DC converters• Load switiching• Motor control• Server power supplies Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 30 V drain current Tmb = 25 °C; VGS = 10 V; Fig. 2 [1] - - 120 A
Ptot total power dissipation Tmb = 25 °C; Fig. 1 - - 306 W junction temperature -55 - 175 °C
Static characteristics
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 12 0.89 1 mΩRDSon drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 100 °C;
Fig. 13; Fig. 12 1.19 1.5 mΩ
Dynamic characteristics
QGD gate-drain charge - 37 - nC
QG(tot) total gate charge
VGS = 4.5 V; ID = 75 A; VDS = 15 V;
Fig. 14; Fig. 15 - 118 - nC
NXP Semiconductors PSMNR90-30BL
N-channel 30 V 1.0 mΩ logic level MOSFET in D2PAK
Symbol Parameter Conditions Min Typ Max Unit
Avalanche ruggedness
EDS(AL)S non-repetitive drain-
source avalancheenergy
VGS = 10 V; Tj(init) = 25 °C; ID = 120 A;
Vsup ≤ 30 V; RGS = 50 Ω; unclamped - 1.9 J
[1] Continuous current is limited by package. Pinning information
Table 2. Pinning information G gate D drain[1] S source D mounting base; connected to
drain 3
D2PAK (SOT404)
mbb076
[1] It is not possible to make connection to pin 2 Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PSMNR90-30BL D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads
(one lead cropped)
SOT404 Marking
Table 4. Marking codes
Type number Marking code
PSMNR90-30BL PSMNR90-30BL Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 30 V
VDGR drain-gate voltage Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ - 30 V
NXP Semiconductors PSMNR90-30BL
N-channel 30 V 1.0 mΩ logic level MOSFET in D2PAK
Symbol Parameter Conditions Min Max Unit
VGS gate-source voltage -20 20 V
Ptot total power dissipation Tmb = 25 °C; Fig. 1 - 306 W
VGS = 10 V; Tmb = 100 °C; Fig. 2 [1] - 120 AID drain current
VGS = 10 V; Tmb = 25 °C; Fig. 2 [1] - 120 A
IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3 - 1573 A
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Tsld(M) peak soldering temperature - 260 °C
Source-drain diode source current Tmb = 25 °C [1] - 120 A
ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 1573 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 120 A;
Vsup ≤ 30 V; RGS = 50 Ω; unclamped 1.9 J
[1] Continuous current is limited by package.
03aa16
Pder(%)
003aaf774
500 50 100 150 200Tmb(C)
(A)
(1)
Fig. 2. Continuous drain current as a function ofmounting base temperature.
NXP Semiconductors PSMNR90-30BL
N-channel 30 V 1.0 mΩ logic level MOSFET in D2PAK
003aaf773-1234-1 1 10 102VDS(V)
(A)
Limit RDSon=VDS/ID
100msms =10ms
100msms
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-mb) thermal resistance
from junction tomounting base
Fig. 4 - 0.22 0.49 K/W
Rth(j-a) thermal resistance
from junction toambient
minimum footprint; mounted on a
printed-circuit board 50 - K/W
003aaf772-1 1T(K/W)0.5
NXP Semiconductors PSMNR90-30BL
N-channel 30 V 1.0 mΩ logic level MOSFET in D2PAK
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
ID = 250 µA; VGS = 0 V; Tj = 25 °C 30 - - VV(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = -55 °C 27 - - V
ID = 1 mA; VDS = VGS; Tj = 25 °C;
Fig. 10; Fig. 11
1.3 1.7 2.2 V
ID = 1 mA; VDS = VGS; Tj = 175 °C;
Fig. 11
0.65 - - V
VGS(th) gate-source threshold
voltage
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 11 - 2.5 V
VDS = 30 V; VGS = 0 V; Tj = 25 °C - 0.02 10 µAIDSS drain leakage current
VDS = 30 V; VGS = 0 V; Tj = 175 °C - - 500 µA
VGS = 16 V; VDS = 0 V; Tj = 25 °C - 10 100 nAIGSS gate leakage current
VGS = -16 V; VDS = 0 V; Tj = 25 °C - 10 100 nA
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 12 0.89 1 mΩ
VGS = 4.5 V; ID = 25 A; Tj = 25 °C;
Fig. 12 1.1 1.4 mΩ
VGS = 10 V; ID = 25 A; Tj = 175 °C;
Fig. 13; Fig. 12 1.65 2 mΩ
RDSon drain-source on-stateresistance
VGS = 10 V; ID = 25 A; Tj = 100 °C;
Fig. 13; Fig. 12 1.19 1.5 mΩ gate resistance f = 1 MHz - 1.1 - Ω
Dynamic characteristics
ID = 75 A; VDS = 15 V; VGS = 10 V;
Fig. 14; Fig. 15 243 - nC
ID = 0 A; VDS = 0 V; VGS = 10 V - 222 - nC
QG(tot) total gate charge 118 - nC
QGS gate-source charge - 39 - nC
QGS(th) pre-threshold gate-source charge - 22 - nC
QGS(th-pl) post-threshold gate-
source charge 17 - nC
QGD gate-drain charge
ID = 75 A; VDS = 15 V; VGS = 4.5 V;
Fig. 14; Fig. 15 37 - nC
VGS(pl) gate-source plateauvoltage ID = 75 A; VDS = 15 V; Fig. 14; Fig. 15 - 2.8 - V
NXP Semiconductors PSMNR90-30BL
N-channel 30 V 1.0 mΩ logic level MOSFET in D2PAK
Symbol Parameter Conditions Min Typ Max Unit
Ciss input capacitance - 14850- pF
Coss output capacitance - 2799 - pF
Crss reverse transfercapacitance
VDS = 15 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 16 1215 - pF
td(on) turn-on delay time VDS = 15 V; RL = 0.2 Ω; VGS = 5 V;
RG(ext) = 5 Ω; ID = 75 A; Tj = 25 °C 95 - ns rise time VDS = 15 V; RL = 0.2 Ω; VGS = 5 V;
RG(ext) = 5 Ω; Tj = 25 °C; ID = 75 A 213 - ns
td(off) turn-off delay time - 199 - ns fall time
VDS = 15 V; RL = 0.2 Ω; VGS = 5 V;
RG(ext) = 5 Ω; ID = 75 A; Tj = 25 °C - 115 - ns
Source-drain diode
VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 17 - 0.8 1.2 V
trr reverse recovery time - 67 - ns recovered charge
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 15 V - 123 - nC
003aaf762
300 20 40 60 80ID(A)
gfs(S)
Fig. 5. Forward transconductance as a function of
003aaf766345-1 1 10 102VGS(V)(pF)issrss
Fig. 6. Input and reverse transfer capacitances as afunction of gate-source voltage; typical values
NXP Semiconductors PSMNR90-30BL
N-channel 30 V 1.0 mΩ logic level MOSFET in D2PAK
003aaf764 4 8 12 16VGS(V) DSon(mΩ)
Fig. 7. Drain-source on-state resistance as a function
of gate-source voltage; typical values
003aaf763 0.6 1.2 1.8 2.4 3VGS(V)(A)j=25°CTj=175°C
Fig. 8. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
003aad011
300 2 4 6 8 10VDS(V)
(A) 3.54.5
VGS(V)=2.4
Fig. 9. Output characteristics: drain current as a function of drain-source voltage; typical values
003aab271-6-5-4-3-2-1 1 2 3VGS(V)
(A)
maxtypmin
Fig. 10. Sub-threshold drain current as a function ofgate-source voltage

Partno	Mfg	Dc	Qty	Available	Descript
PSMNR90-30BL \|PSMNR9030BL	NXP/PH	N/a	10000	avai	N-channel 30 V 1.0 m鈩?logic level MOSFET in D2PAK