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Partno	Mfg	Dc	Qty	Available	Descript
PSMN9R5-100BS \|PSMN9R5100BS	NXP/PH	N/a	10000	avai	N-channel 100 V 9.6 m鈩?standard level MOSFET in D2PAK

PSMN9R5-100BS ,N-channel 100 V 9.6 m鈩?standard level MOSFET in D2PAKApplications DC-to-DC converters Motor control Load switching Server power supplies1.4 Quick re ..
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PSMN9R5-100BS
N-channel 100 V 9.6 m鈩?standard level MOSFET in D2PAK
Product profile1.1 General description
Standard level N-channel MOSFET in a D2PAK package qualified to 175C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits High efficiency due to low switching
and conduction losses Suitable for standard level gate drive
1.3 Applications DC-to-DC converters Load switching Motor control Server power supplies
1.4 Quick reference data
PSMN9R5-100BS
N-channel 100 V 9.6 mΩ standard level MOSFET in D2PAK
Rev. 2 — 2 March 2012 Product data sheet
Table 1. Quick reference data
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - - 100 V drain current Tmb =25°C; VGS =10V; see Figure 1 --89 A
Ptot total power dissipation Tmb =25°C; see Figure 2 --211 W junction temperature -55 - 175 °C
Static characteristics
RDSon drain-source on-state resistance VGS =10V; ID =15A; Tj =25°C;see Figure 13 - 8.16 9.6 mΩ
Dynamic characteristics
QGD gate-drain charge VGS =10V; ID =60A; VDS =50V;
see Figure 14;see Figure 15
-23 -nC
QG(tot) total gate charge - 82 - nC
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source
avalanche energy
VGS =10V; Tj(init) =25°C; ID =89A;
Vsup≤ 100 V; unclamped; RGS =50Ω - 177 mJ
NXP Semiconductors PSMN9R5-100BS
N-channel 100 V 9.6 mΩ standard level MOSFET in D2PAK Pinning information
[1] It is not possible to make connection to pin 2. Ordering information Limiting values
Table 2. Pinning information
Table 3. Ordering information
PSMN9R5-100BS D2PAK plastic single-ended surface-mounted package (D2PAK);
3 leads (one lead cropped)
SOT404
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - 100 V
VDGR drain-gate voltage Tj≤ 175 °C; Tj≥25 °C; RGS =20kΩ - 100 V
VGS gate-source voltage -20 20 V drain current VGS =10V; Tmb= 100 °C; see Figure 1 -63 A
VGS =10V; Tmb =25°C; see Figure 1 -89 A
IDM peak drain current pulsed; tp≤10 µs; Tmb =25°C;
see Figure 3 355 A
Ptot total power dissipation Tmb =25°C; see Figure 2 -211 W
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Tsld(M) peak soldering temperature - 260 °C
Source-drain diode source current Tmb =25°C - 89 A
ISM peak source current pulsed; tp≤10 µs; Tmb=25°C - 355 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
VGS =10V; Tj(init) =25°C; ID =89A;
Vsup≤ 100 V; unclamped; RGS =50Ω 177 mJ
NXP Semiconductors PSMN9R5-100BS
N-channel 100 V 9.6 mΩ standard level MOSFET in D2PAK
NXP Semiconductors PSMN9R5-100BS
N-channel 100 V 9.6 mΩ standard level MOSFET in D2PAK Thermal characteristics
Table 5. Thermal characteristics
Rth(j-mb) thermal resistance from junction
to mounting base
see Figure 4 - 0.38 0.71 K/W
Rth(j-a) thermal resistance from junction
to ambient
Minimum footprint; mounted on a
printed circuit board
-50 -K/W
NXP Semiconductors PSMN9R5-100BS
N-channel 100 V 9.6 mΩ standard level MOSFET in D2PAK CharacteristicsTable 6. Characteristics
Static characteristics
V(BR)DSS drain-source
breakdown voltage =0.25mA; VGS =0V; Tj= -55°C 90 - - V =0.25mA; VGS =0V; Tj=25°C 100 - - V
VGS(th) gate-source threshold
voltage =1mA; VDS =VGS; Tj= 175 °C;
see Figure 10; see Figure 11 --V =1mA; VDS =VGS; Tj =25°C;
see Figure 10; see Figure 11
234V =1mA; VDS =VGS; Tj =-55 °C;
see Figure 10; see Figure 11
--4.8 V
IDSS drain leakage current VDS =100 V; VGS =0V; Tj= 125°C - - 100 µA
VDS =100 V; VGS =0V; Tj=25°C - 0.02 4 µA
IGSS gate leakage current VGS =20V; VDS =0V; Tj=25°C - 10 100 nA
VGS =-20 V; VDS =0V; Tj=25°C - 10 100 nA
RDSon drain-source on-state
resistance
VGS =10V; ID =15A; Tj= 100 °C;
see Figure 12 - 17.3 mΩ
VGS =10V; ID =15A; Tj= 175 °C;
see Figure 12 23.5 27.4 mΩ
VGS =10V; ID =15A; Tj =25°C;
see Figure 13 8.16 9.6 mΩ internal gate resistance
(AC)
f=1MHz - 0.7 - Ω
Dynamic characteristics
QG(tot) total gate charge ID =0A; VDS =0V; VGS =10V;
see Figure 14
-67 -nC =60A; VDS =50V; VGS =10V;
see Figure 14; see Figure 15
-82 -nC
QGS gate-source charge - 21 - nC
QGS(th) pre-threshold
gate-source charge =60A; VDS =50V; VGS =3V;
see Figure 14 13.1 - nC
QGS(th-pl) post-threshold
gate-source charge =60A; VDS =50V; VGS =10V;
see Figure 14
-7.8 -nC
QGD gate-drain charge ID =60A; VDS =50V; VGS =10V;
see Figure 14; see Figure 15
-23 -nC
VGS(pl) gate-source plateau
voltage
VDS =50V; see Figure 14;
see Figure 15
-4.5 -V
Ciss input capacitance VDS =50V; VGS=0 V; f=1 MHz; =25°C; see Figure 16 4454 - pF
Coss output capacitance - 302 - pF
Crss reverse transfer
capacitance 185 - pF
td(on) turn-on delay time VDS =50V; RL =0.8 Ω; VGS =10V;
RG(ext) =4.7 Ω; Tj =25°C
-22 -ns rise time - 25.2 - ns
td(off) turn-off delay time - 52.2 - ns fall time - 22.8 - ns
NXP Semiconductors PSMN9R5-100BS
N-channel 100 V 9.6 mΩ standard level MOSFET in D2PAK
Source-drain diode
VSD source-drain voltage IS =15A; VGS =0V; Tj =25°C;
see Figure 17 0.85 1.2 V
trr reverse recovery time IS =20A; dIS/dt= 100 A/µs; VGS =0V;
VDS =50V 61.5 - ns recovered charge - 157 - nC
Table 6. Characteristics …continued
NXP Semiconductors PSMN9R5-100BS
N-channel 100 V 9.6 mΩ standard level MOSFET in D2PAK

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