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PSMN8R7-80BS |PSMN8R780BSNXP/PHN/a10000avaiN-channel 80 V 8.7 m鈩?standard level MOSFET in D2PAK


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PSMN8R7-80BS
N-channel 80 V 8.7 m鈩?standard level MOSFET in D2PAK
Product profile1.1 General description
Standard level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits High efficiency due to low switching
and conduction losses Suitable for standard level gate drive
1.3 Applications DC-to-DC converters Load switching Motor control Server power supplies
1.4 Quick reference data
PSMN8R7-80BS
N-channel 80 V 8.7 mΩ standard level MOSFET in D2PAK
Rev. 2 — 2 March 2012 Product data sheet
Table 1. Quick reference data
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C --80 V drain current Tmb =25°C; VGS =10V; see Figure 1 --90 A
Ptot total power dissipation Tmb =25°C; see Figure 2 --170 W junction temperature -55 - 175 °C
Static characteristics
RDSon drain-source on-state resistance VGS =10V; ID =10A; Tj= 100 °C;see Figure 12 --14 mΩ
VGS =10V; ID =10A; Tj =25°C;
see Figure 13
-7.5 8.7 mΩ
Dynamic characteristics
QGD gate-drain charge VGS =10V; ID =25A; VDS =40V;
see Figure 14; see Figure 15
-11 -nC
QG(tot) total gate charge - 52 - nC
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source
avalanche energy
VGS =10V; Tj(init) =25°C; ID =90A;
Vsup≤80 V; RGS =50 Ω; unclamped
--120 mJ
NXP Semiconductors PSMN8R7-80BS
N-channel 80 V 8.7 mΩ standard level MOSFET in D2PAK Pinning information
[1] It is not possible to make connection to pin 2. Ordering information Limiting values
Table 2. Pinning information
Table 3. Ordering information
PSMN8R7-80BS D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads
(one lead cropped)
SOT404
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - 80 V
VDGR drain-gate voltage Tj≥25 °C; Tj≤ 175 °C; RGS =20kΩ -80 V
VGS gate-source voltage -20 20 V drain current VGS =10V; Tmb= 100 °C; see Figure 1 -64 A
VGS =10V; Tmb =25°C; see Figure 1 -90 A
IDM peak drain current pulsed; tp≤10 µs; Tmb =25°C;
see Figure 3 361 A
Ptot total power dissipation Tmb =25°C; see Figure 2 - 170 W
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Tsld(M) peak soldering temperature - 260 °C
Source-drain diode source current Tmb =25°C - 90 A
ISM peak source current pulsed; tp≤10 µs; Tmb=25°C - 361 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
VGS =10V; Tj(init) =25°C; ID =90A;
Vsup≤80 V; RGS =50 Ω; unclamped 120 mJ
NXP Semiconductors PSMN8R7-80BS
N-channel 80 V 8.7 mΩ standard level MOSFET in D2PAK
NXP Semiconductors PSMN8R7-80BS
N-channel 80 V 8.7 mΩ standard level MOSFET in D2PAK Thermal characteristics
Table 5. Thermal characteristics
Rth(j-mb) thermal resistance from junction to
mounting base
see Figure 4 - 0.54 0.88 K/W
Rth(j-a) thermal resistance from junction to
ambient
Minimum footprint; mounted on a
printed circuit board
-50 -K/W
NXP Semiconductors PSMN8R7-80BS
N-channel 80 V 8.7 mΩ standard level MOSFET in D2PAK CharacteristicsTable 6. Characteristics
Tested to JEDEC standards where applicable.
Static characteristics
V(BR)DSS drain-source
breakdown voltage =250 µA; VGS =0V; Tj= -55°C 73 - - V =250 µA; VGS =0V; Tj=25°C 80 --V
VGS(th) gate-source threshold
voltage =1mA; VDS =VGS; Tj= 175 °C;
see Figure 10 --V =1mA; VDS =VGS; Tj =-55 °C;
see Figure 10
--4.6 V =1mA; VDS =VGS; Tj =25°C;
see Figure 11; see Figure 10
2.3 34V
IDSS drain leakage current VDS =80V; VGS =0V; Tj=25°C - 0.3 5 µA
VDS =80V; VGS =0V; Tj= 125°C - - 100 µA
IGSS gate leakage current VGS =-20 V; VDS =0V; Tj=25°C - 10 100 nA
VGS =20V; VDS =0V; Tj=25°C - 10 100 nA
RDSon drain-source on-state
resistance
VGS =10V; ID =10A; Tj= 175 °C;
see Figure 12 - 20.88 mΩ
VGS =10V; ID =10A; Tj= 100 °C;
see Figure 12
--14 mΩ
VGS =10V; ID =10A; Tj =25°C;
see Figure 13
-7.5 8.7 mΩ internal gate resistance
(AC)
f=1MHz - 1 - Ω
Dynamic characteristics
QG(tot) total gate charge ID =0A; VDS =0V; VGS =10V - 44 - nC =25A; VDS =40V; VGS =10V;
see Figure 14; see Figure 15
-52 -nC
QGS gate-source charge - 15 - nC
QGS(th) pre-threshold
gate-source charge =25A; VDS =40V; VGS =10V;
see Figure 14
-9.2 -nC
QGS(th-pl) post-threshold
gate-source charge
-5.8 -nC
QGD gate-drain charge ID =25A; VDS =40V; VGS =10V;
see Figure 14; see Figure 15
-11 -nC
VGS(pl) gate-source plateau
voltage =25A; VDS =40V; see Figure 15 -4.6 -V
Ciss input capacitance VDS =40V; VGS=0 V; f=1 MHz; =25°C; see Figure 16 3346 - pF
Coss output capacitance - 296 - pF
Crss reverse transfer
capacitance 158 - pF
td(on) turn-on delay time VDS =40V; RL =1.6 Ω; VGS =10V;
RG(ext) =4.7Ω
-21 -ns rise time - 26 - ns
td(off) turn-off delay time - 46 - ns fall time - 20 - ns
NXP Semiconductors PSMN8R7-80BS
N-channel 80 V 8.7 mΩ standard level MOSFET in D2PAK
Source-drain diode
VSD source-drain voltage IS =10A; VGS =0V; Tj =25°C;
see Figure 17 0.79 1.2 V
trr reverse recovery time IS =25A; dIS/dt= 100 A/µs; VGS =0V;
VDS =40V
-42 -ns recovered charge - 66 - nC
Table 6. Characteristics …continued
Tested to JEDEC standards where applicable.
NXP Semiconductors PSMN8R7-80BS
N-channel 80 V 8.7 mΩ standard level MOSFET in D2PAK
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