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PSMN8R5-100ES
N-channel 100 V 8.5 m惟 standard level MOSFET in I2PAK
PSMN8R5-100ES
N-channel 100 V 8.5 mΩ standard level MOSFET in I2PAK11 October 2012 Product data sheet Product profile
1.1 General description
Standard level N-channel MOSFET in a I2PAK package qualified to 175 °C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.
1.2 Features and benefits High efficiency due to low switching and conduction losses• Suitable for standard level gate drive sources
1.3 Applications AC-to-DC power supply equipment• Motor control• Server power supplies• Synchronous rectification
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 100 V drain current Tj = 25 °C; VGS = 10 V; Fig. 1 [1] - - 100 A
Ptot total power dissipation Tmb = 25 °C; Fig. 2 - - 263 W
Static characteristics
RDSon drain-source on-stateresistance VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 13; Fig. 12 6.4 8.5 mΩ
Dynamic characteristics
QGD gate-drain charge - 33 - nC
QG(tot) total gate charge
VGS = 10 V; ID = 25 A; VDS = 50 V;
Fig. 14; Fig. 15 - 111 - nC
Avalanche Ruggedness
EDS(AL)S non-repetitive drain-
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; - 219 mJ
NXP Semiconductors PSMN8R5-100ES
N-channel 100 V 8.5 mΩ standard level MOSFET in I2PAK Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol G gate D drain S source D mounting base; connected todrain21
I2PAK (SOT226)
mbb076 Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PSMN8R5-100ES I2PAK plastic single-ended package (I2PAK); TO-262 SOT226 Marking
Table 4. Marking codes
Type number Marking code
PSMN8R5-100ES PSMN8R5-100ES Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 100 V
VDGR drain-gate voltage Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ - 100 V
VGS gate-source voltage -20 20 V
VGS = 10 V; Tj = 25 °C; Fig. 1 [1] - 100 AID drain current
VGS = 10 V; Tmb = 100 °C; Fig. 1 - 75 A
IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 4 - 429 A
Ptot total power dissipation Tmb = 25 °C; Fig. 2 - 263 W -55 175 °C
NXP Semiconductors PSMN8R5-100ES
N-channel 100 V 8.5 mΩ standard level MOSFET in I2PAK
Symbol Parameter Conditions Min Max Unit junction temperature -55 175 °C
Tsld(M) peak soldering temperature - 260 °C
Source-drain diode source current Tmb = 25 °C [1] - 100 A
ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 429 A
Avalanche Ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A;
Vsup ≤ 100 V; RGS = 50 Ω; unclamped;
Fig. 3 219 mJ
[1] Continious current limited by package.
003aak417
160 50 100 150 200Tmb(°C)
(A)
(1)
(1) Capped at 100A due to package
Fig. 1. Continuous drain current as a function ofmounting base temperature
Tmb(°C)0 20015050 100
03aa16
Pder(%)
Fig. 2. Normalized total power dissipation as afunction of mounting base temperature
NXP Semiconductors PSMN8R5-100ES
N-channel 100 V 8.5 mΩ standard level MOSFET in I2PAK
003aak41823-3 10-2 10-1 1 10tAL(ms)
IAL
(A)
(1)
(2)
Fig. 3. Avalanche rating; avalanche current as a function of avalanche time
003aak419-123-1 1 10 102 103
VDS(V)
(A) Limit RDSon=VDS/ID
100µsms=10µs
100msms
Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage Max Unit 0.57 K/W
NXP Semiconductors PSMN8R5-100ES
N-channel 100 V 8.5 mΩ standard level MOSFET in I2PAK
003aah108
single shot
0.05-3-2-1-6 10-5 10-4 10-3 10-2 10-1 1tp(s)
Zth(j-mb)
(K/W)0.5
0.02Tδ=
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
ID = 250 µA; VGS = 0 V; Tj = 25 °C 100 - - VV(BR)DSS drain-source
breakdown voltage ID = 250 µA; VGS = 0 V; Tj = -55 °C 90 - - V
VGS(th) gate-source thresholdvoltage ID = 1 mA; VDS = VGS; Tj = 25 °C;
Fig. 10; Fig. 11
2.4 3 4 V
ID = 1 mA; VDS = VGS; Tj = 175 °C;
Fig. 10 - - VVGSth gate-source threshold
voltage
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 10 - 4.5 V
VDS = 100 V; VGS = 0 V; Tj = 25 °C - 0.02 1 µAIDSS drain leakage current - - 20 µA
VGS = -20 V; VDS = 0 V; Tj = 25 °C - 2 100 nAIGSS gate leakage current
VGS = 20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA 22.6 mΩ 14.9 mΩ 8.5 mΩ - Ω
NXP Semiconductors PSMN8R5-100ES
N-channel 100 V 8.5 mΩ standard level MOSFET in I2PAK
Symbol Parameter Conditions Min Typ Max Unit
Dynamic characteristics
QG(tot) total gate charge - 111 - nC
QGS gate-source charge - 24 - nC
QGS(th) pre-threshold gate-source charge - 16 - nC
QGS(th-pl) post-threshold gate-
source charge 8 - nC
QGD gate-drain charge
ID = 25 A; VDS = 50 V; VGS = 10 V;
Fig. 14; Fig. 15 33 - nC
VGS(pl) gate-source plateauvoltage ID = 15 A; VDS = 50 V; Fig. 14; Fig. 15 - 4.4 - V
Ciss input capacitance VDS = 50 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 16; Fig. 17 5512 - pF
Coss output capacitance VDS = 50 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 16 380 - pF
Crss reverse transfer
capacitance
VDS = 50 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 16; Fig. 17 256 - pF
td(on) turn-on delay time - 20 - ns rise time - 35 - ns
td(off) turn-off delay time - 87 - ns fall time
VDS = 50 V; RL = 2 Ω; VGS = 10 V;
RG(ext) = 5 Ω 43 - ns
Source-drain diode
VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 18 - 0.82 1.2 V
trr reverse recovery time - 53 - ns recovered charge
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 50 V - 124 - nC
NXP Semiconductors PSMN8R5-100ES
N-channel 100 V 8.5 mΩ standard level MOSFET in I2PAK
003aah739
240 2 4 6VDS(V)D(A)
VGS(V)=10
Tj = 25 °C; tp = 300 μs
Fig. 6. Output characteristics; drain current as a function of drain-source voltage; typical values
003aak421 5 10 15 20VGS(V) DSon(mΩ)
Fig. 7. Drain-source on-state resistance as a function
of gate-source voltage; typical values
003aak425
120 80 160 240 320 400ID(A)fs(S)
Fig. 8. Forward transconductance as a function of
drain current; typical values
003aah742
250 2 4 6 8 10VGS(V)
(A)=25°C=175°C
Fig. 9. Transfer characteristics; drain current as a
function of gate-source voltage; typical values

Partno	Mfg	Dc	Qty	Available	Descript
PSMN8R5-100ES \|PSMN8R5100ES	NXP/PH	N/a	10000	avai	N-channel 100 V 8.5 m惟 standard level MOSFET in I2PAK