PSMN7R8-120PS Fast Delivery |IC PHOENIX CO.,LIMITED

PSMN7R8-120PS ,N-channel 120V 7.9m惟 standard level MOSFET in TO220Applications• AC-to-DC power supplySynchronous rectification•• Motor control4. Quick reference data ..
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PSMN7R8-120PS
N-channel 120V 7.9m惟 standard level MOSFET in TO220
TO-220AB PSMN7R8-120PS
N-channel 120V 7.9mΩ standard level MOSFET in TO22025 January 2013 Product data sheet General description
Standard level N-channel MOSFET in TO220 package qualified to 175C. This product isdesigned and qualified for use in a wide range of industrial, communications and powersupply equipment. Features and benefits High efficiency due to low switching and conduction losses• TO220 package• Suitable for standard level gate drive Applications AC-to-DC power supply• Synchronous rectification• Motor control Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 120 V drain current Tmb = 25 °C; VGS = 10 V; Fig. 1 - - 70 A
Ptot total power dissipation Tmb = 25 °C; Fig. 2 - - 349 W
Static characteristics
RDSon drain-source on-stateresistance VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 12
4.7 6.72 7.9 mΩ
Dynamic characteristics
QGD gate-drain charge - 50.5 - nC
QG(tot) total gate charge
VGS = 10 V; ID = 25 A; VDS = 60 V;
Fig. 14; Fig. 15 - 167 - nC
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source avalanche
VGS = 10 V; Tj(init) = 25 °C; ID = 70 A;
Vsup ≤ 120 V; unclamped; RGS = 50 Ω; - 386 mJ
NXP Semiconductors PSMN7R8-120PS
N-channel 120V 7.9mΩ standard level MOSFET in TO220 Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol G gate D drain S source D drain2
TO-220AB (SOT78)
mbb076 Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PSMN7R8-120PS TO-220AB plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78 Marking
Table 4. Marking codes
Type number Marking code
PSMN7R8-120PS PSMN7R8-120PS Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 120 V
VDGR drain-gate voltage Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ - 120 V
VGS gate-source voltage -20 20 V
VGS = 10 V; Tmb = 25 °C; Fig. 1 - 70 AID drain current - 70 A - 280 A
NXP Semiconductors PSMN7R8-120PS
N-channel 120V 7.9mΩ standard level MOSFET in TO220
Symbol Parameter Conditions Min Max Unit
Ptot total power dissipation Tmb = 25 °C; Fig. 2 - 349 W
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Tsld(M) peak soldering temperature - 260 °C
Source-drain diode source current Tmb = 25 °C - 70 A
ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 280 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 70 A;
Vsup ≤ 120 V; unclamped; RGS = 50 Ω;
Fig. 3 386 mJ
003aak697 50 100 150 2000
Tj (°C)ID(A)(A)
Fig. 1. Continuous drain current as a function of
mounting base temperature
Tmb(°C)0 20015050 100
03aa16
Pder(%)
Fig. 2. Normalized total power dissipation as a
function of mounting base temperature
NXP Semiconductors PSMN7R8-120PS
N-channel 120V 7.9mΩ standard level MOSFET in TO220
003aak698
10-3 10-2 10-1 1 101
tAL (ms)
IALIAL(A)(A) (1)(1)
(2)(2)
Fig. 3. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
003aak696 10 102 10310-1
VDS (V)ID(A)(A)DC
100 ms100 ms10 ms10 ms
1 ms1 ms
100 us100 us
tp = 10 ustp = 10 us
Limit RDSon = VDS / IDLimit RDSon = VDS / ID
Fig. 4. Safe operating area; continuous and peak drain current as a function of drain-source voltage Typ Max Unit 0.35 0.43 K/W
NXP Semiconductors PSMN7R8-120PS
N-channel 120V 7.9mΩ standard level MOSFET in TO220
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistancefrom junction to
ambient
vertical in free air - 60 - K/W
003aak695
single shot
0.1-6 10-5 10-4 10-3 10-2 10-1 1tp(s) th(j-mb)(K/W) δ=0.5
0.02 Ptpδ=
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
ID = 250 µA; VGS = 0 V; Tj = 25 °C 120 - - VV(BR)DSS drain-source
breakdown voltage ID = 250 µA; VGS = 0 V; Tj = -55 °C 108 - - V
ID = 1 mA; VDS = VGS; Tj = 25 °C;
Fig. 10; Fig. 11 3 4 V
ID = 1 mA; VDS = VGS; Tj = 175 °C;
Fig. 10 - - V
VGS(th) gate-source thresholdvoltage
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 10 - 4.6 V 1 µA 500 µA 100 nA 100 nA 7.9 mΩ 22.9 mΩ
NXP Semiconductors PSMN7R8-120PS
N-channel 120V 7.9mΩ standard level MOSFET in TO220
Symbol Parameter Conditions Min Typ Max Unit internal gateresistance (AC) f = 1 MHz 0.39 0.78 1.56 Ω
Dynamic characteristics
QG(tot) total gate charge - 167 - nC
QGS gate-source charge - 36.9 - nC
QGS(th) pre-threshold gate-
source charge 24.2 - nC
QGS(th-pl) post-threshold gate-source charge - 12.7 - nC
QGD gate-drain charge
ID = 25 A; VDS = 60 V; VGS = 10 V;
Fig. 14; Fig. 15 50.5 - nC
VGS(pl) gate-source plateau
voltage
ID = 25 A; VDS = 60 V; Fig. 14; Fig. 15 - 4.5 - V
Ciss input capacitance - 9473 - pF
Coss output capacitance - 441 - pF
Crss reverse transfercapacitance
VDS = 60 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 16 298 - pF
td(on) turn-on delay time - 45.5 - ns rise time - 55.3 - ns
td(off) turn-off delay time - 151.8- ns fall time
VDS = 60 V; RL = 2.4 Ω; VGS = 10 V;
RG(ext) = 5 Ω; Tj = 25 °C 60.8 - ns
Source-drain diode
VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 17 - 0.81 1.2 V
trr reverse recovery time - 75.7 - ns recovered charge
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 60 V - 264 - nC
NXP Semiconductors PSMN7R8-120PS
N-channel 120V 7.9mΩ standard level MOSFET in TO220
003aak689
120 1 2 3VDS(V)(A) VGS(V)=
4.56.510 5.5
Fig. 6. Output characteristics: drain current as a function of drain-source voltage; typical values
003aak688 4 8 12 16VGS(V)
RDSon(mΩ)
Fig. 7. Drain-source on-state resistance as a function
of gate-source voltage; typical values
003aak686
200 20 40 60 80 100ID(A)fs(S)
Fig. 8. Forward transconductance as a function ofdrain current; typical values
003aak687
100 1 2 3 4 5 6VGS(V)D(A)j=25°CTj=175°C
Fig. 9. Transfer characteristics: drain current as a
function of gate-source voltage; typical values

Partno	Mfg	Dc	Qty	Available	Descript
PSMN7R8-120PS \|PSMN7R8120PS	NXP/PH	N/a	10000	avai	N-channel 120V 7.9m惟 standard level MOSFET in TO220