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PSMN7R6-60PS
N-channel 60 V 7.8 m惟 standard level MOSFET
Product profile1.1 General descriptionStandard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits High efficiency due to low switching
and conduction losses Suitable for standard level gate drive
sources
1.3 Applications DC-to-DC converters Load switching Motor control Server power supplies
1.4 Quick reference data
PSMN7R6-60PS
N-channel 60 V 7.8 mΩ standard level MOSFET
Rev. 03 — 28 October 2010 Product data sheet
Table 1. Quick reference dataVDS drain-source voltage Tj≥25 °C; Tj≤ 175°C --60 V drain current Tmb =25°C; VGS =10V; see Figure 1 --92 A
Ptot total power dissipation Tmb=25 °C; see Figure 2 --149 W
Static characteristicsRDSon drain-source on-state
resistance
VGS =10V; ID =25A; =25°C; see Figure 13;
see Figure 9
-5.9 7.8 mΩ
Dynamic characteristicsQGD gate-drain charge VGS =10V; ID =25A; VDS =30 V; see Figure 15;
see Figure 14
-10.6- nC
Avalanche ruggednessEDS(AL)S non-repetitive
drain-source avalanche energy
VGS =10V; Tj(init) =25 °C; =92A; Vsup≤ 100V; RGS =50 Ω; unclamped
--110 mJ
NXP Semiconductors PSMN7R6-60PS
N-channel 60 V 7.8 mΩ standard level MOSFET Pinning information Ordering information Limiting values
Table 2. Pinning information G gate
SOT78 (TO-220AB) D drain source D mounting base; connected to
drain
Table 3. Ordering informationPSMN7R6-60PS TO-220AB plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - 60 V
VDGR drain-gate voltage RGS =20kΩ -60 V
VGS gate-source voltage -20 20 V drain current VGS =10V; Tmb= 100 °C; see Figure 1 -65 A
VGS =10V; Tmb =25°C; see Figure 1 -92 A
IDM peak drain current pulsed; tp≤10 µs; Tmb =25°C; see Figure 3 - 389 A
Ptot total power dissipation Tmb =25°C; see Figure 2 - 149 W
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Source-drain diode source current Tmb =25°C - 92 A
ISM peak source current pulsed; tp≤10 µs; Tmb=25°C - 389 A
Avalanche ruggednessEDS(AL)S non-repetitive drain-source
avalanche energy
VGS =10V; Tj(init) =25°C; ID =92A;
Vsup≤ 100 V; RGS =50 Ω; unclamped
-110 mJ
NXP Semiconductors PSMN7R6-60PS
N-channel 60 V 7.8 mΩ standard level MOSFET
NXP Semiconductors PSMN7R6-60PS
N-channel 60 V 7.8 mΩ standard level MOSFET Thermal characteristics
Table 5. Thermal characteristicsRth(j-mb) thermal resistance from junction to
mounting base
see Figure 4 - 0.49 1.01 K/W
NXP Semiconductors PSMN7R6-60PS
N-channel 60 V 7.8 mΩ standard level MOSFET CharacteristicsTable 6. Characteristics
Static characteristicsV(BR)DSS drain-source breakdown voltageID =250 µA; VGS =0V; Tj= -55°C 54 - - V =250 µA; VGS =0V; Tj=25°C 60 --V
VGS(th) gate-source threshold voltage ID =1mA; VDS =VGS; Tj =25°C;
see Figure 10; see Figure 11
234V
VGSth gate-source threshold voltage ID =1mA; VDS =VGS; Tj= 175 °C;
see Figure 11 --V =1mA; VDS =VGS; Tj =-55 °C;
see Figure 11
--4.6 V
IDSS drain leakage current VDS =60V; VGS =0V; Tj=25°C - 0.05 10 µA
VDS =60V; VGS =0V; Tj= 125°C - - 100 µA
IGSS gate leakage current VGS =20V; VDS =0V; Tj=25°C - 2 100 nA
VGS =-20 V; VDS =0V; Tj=25°C - 2 100 nA
RDSon drain-source on-state
resistance
VGS =10V; ID =25A; Tj= 175 °C;
see Figure 12 13.3 18 mΩ
VGS =10V; ID =25A; Tj =25°C;
see Figure 13; see Figure 9
-5.9 7.8 mΩ gate resistance f=1 MHz - 0.98 - Ω
Dynamic characteristicsQG(tot) total gate charge ID =25A; VDS =30V; VGS =10V;
see Figure 14; see Figure 15 38.7 - nC
QGS gate-source charge - 12.9 - nC
QGS(th) pre-threshold gate-source
charge
-6.9 -nC
QGS(th-pl) post-threshold gate-source
charge -nC
QGD gate-drain charge ID =25A; VDS =30V; VGS =10V;
see Figure 15; see Figure 14 10.6 - nC
VGS(pl) gate-source plateau voltage ID =25A; VDS =30V; see Figure
14; see Figure 15
-5.6 -V
Ciss input capacitance VDS =30V; VGS=0 V; f=1 MHz; =25°C; see Figure 16; see
Figure 8 2651 - pF
Coss output capacitance VDS =30V; VGS=0 V; f=1 MHz; =25°C; see Figure 16 342 - pF
Crss reverse transfer capacitance VDS =30V; VGS=0 V; f=1 MHz; =25°C; see Figure 16; see
Figure 8 183 - pF
td(on) turn-on delay time VDS =30V; RL =1.2 Ω; VGS =10V;
RG(ext) =4.7Ω
-19 - ns rise time - 21 - ns
td(off) turn-off delay time - 37 - ns fall time - 13 - ns
NXP Semiconductors PSMN7R6-60PS
N-channel 60 V 7.8 mΩ standard level MOSFET
Source-drain diodeVSD source-drain voltage IS =25A; VGS =0 V; Tj =25°C;
see Figure 17 0.86 1.2 V
trr reverse recovery time IS =25A; dIS/dt= 100 A/µs;
VGS =0V; VDS =30V 40.4 - ns recovered charge - 56 - nC
Table 6. Characteristics …continued
NXP Semiconductors PSMN7R6-60PS
N-channel 60 V 7.8 mΩ standard level MOSFET
