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PSMN7R6-60BS |PSMN7R660BSNXP/PHN/a10000avaiN-channel 60 V 7.8 m惟 standard level MOSFET in D2PAK


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PSMN7R6-60BS
N-channel 60 V 7.8 m惟 standard level MOSFET in D2PAK
Product profile1.1 General description
Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits High efficiency due to low switching
and conduction losses Suitable for standard level gate drive
sources
1.3 Applications DC-to-DC converters Load switching Motor control Server power supplies
1.4 Quick reference data
PSMN7R6-60BS
N-channel 60 V 7.8 mΩ standard level MOSFET in D2PAK
Rev. 2 — 2 March 2012 Product data sheet
Table 1. Quick reference data
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C --60 V drain current Tmb =25°C; VGS =10V; see Figure 1 --92 A
Ptot total power dissipation Tmb =25°C; see Figure 2 - - 149 W junction temperature -55 - 175 °C
Static characteristics
RDSon drain-source on-state resistance VGS =10V; ID =25A; Tj =25°C;see Figure 13; see Figure 9 -5.9 7.8 mΩ
Dynamic characteristics
QGD gate-drain charge VGS =10V; ID =25A; VDS =30V;
see Figure 15; see Figure 14 10.6 - nC
QG(tot) total gate charge VGS =10V; ID =25A; VDS =30V;
see Figure 14; see Figure 15 38.7 - nC
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
VGS =10V; Tj(init) =25°C; ID =92A; Vsup≤ 100 V; RGS =50 Ω; unclamped --110 mJ
NXP Semiconductors PSMN7R6-60BS
N-channel 60 V 7.8 mΩ standard level MOSFET in D2PAK Pinning information
[1] It is not possible to make connection to pin 2. Ordering information Limiting values
Table 2. Pinning information
Table 3. Ordering information
PSMN7R6-60BS D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads
(one lead cropped)
SOT404
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - 60 V
VDGR drain-gate voltage RGS =20kΩ -60 V
VGS gate-source voltage -20 20 V drain current VGS =10V; Tmb= 100 °C; see Figure 1 -65 A
VGS =10V; Tmb =25°C; see Figure 1 -92 A
IDM peak drain current pulsed; tp≤10 µs; Tmb =25°C;
see Figure 3 389 A
Ptot total power dissipation Tmb =25°C; see Figure 2 - 149 W
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Tsld(M) peak soldering temperature - 260 °C
Source-drain diode source current Tmb =25°C - 92 A
ISM peak source current pulsed; tp≤10 µs; Tmb=25°C - 389 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
VGS =10V; Tj(init) =25°C; ID =92A;
Vsup≤ 100 V; RGS =50 Ω; unclamped
-110 mJ
NXP Semiconductors PSMN7R6-60BS
N-channel 60 V 7.8 mΩ standard level MOSFET in D2PAK
NXP Semiconductors PSMN7R6-60BS
N-channel 60 V 7.8 mΩ standard level MOSFET in D2PAK Thermal characteristics
Table 5. Thermal characteristics
Rth(j-mb) thermal resistance from junction to
mounting base
see Figure 4 - 0.49 1.01 K/W
Rth(j-a) thermal resistance from junction to
ambient
Minimum footprint; mounted on a
printed circuit board
-50 -K/W
NXP Semiconductors PSMN7R6-60BS
N-channel 60 V 7.8 mΩ standard level MOSFET in D2PAK CharacteristicsTable 6. Characteristics
Static characteristics
V(BR)DSS drain-source
breakdown voltage =250 µA; VGS =0V; Tj= -55°C 54 - - V =250 µA; VGS =0V; Tj=25°C 60 --V
VGS(th) gate-source threshold
voltage =1mA; VDS =VGS; Tj =25°C;
see Figure 10; see Figure 11
234V
VGSth gate-source threshold
voltage =1mA; VDS =VGS; Tj= 175 °C;
see Figure 11 --V =1mA; VDS =VGS; Tj =-55 °C;
see Figure 11
--4.6 V
IDSS drain leakage current VDS =60V; VGS =0V; Tj=25°C - 0.05 10 µA
VDS =60V; VGS =0V; Tj= 125°C - - 100 µA
IGSS gate leakage current VGS =20V; VDS =0V; Tj=25°C - 2 100 nA
VGS =-20 V; VDS =0V; Tj=25°C - 2 100 nA
RDSon drain-source on-state
resistance
VGS =10V; ID =25A; Tj= 175 °C;
see Figure 12 13.3 18 mΩ
VGS =10V; ID =25A; Tj =25°C;
see Figure 13; see Figure 9
-5.9 7.8 mΩ gate resistance f=1 MHz - 0.98 - Ω
Dynamic characteristics
QG(tot) total gate charge ID =25A; VDS =30V; VGS =10V;
see Figure 14; see Figure 15 38.7 - nC
QGS gate-source charge - 12.9 - nC
QGS(th) pre-threshold
gate-source charge
-6.9 -nC
QGS(th-pl) post-threshold
gate-source charge -nC
QGD gate-drain charge ID =25A; VDS =30V; VGS =10V;
see Figure 15; see Figure 14 10.6 - nC
VGS(pl) gate-source plateau
voltage =25A; VDS =30V; see Figure 14;
see Figure 15
-5.6 -V
Ciss input capacitance VDS =30V; VGS=0 V; f=1 MHz; =25°C; see Figure 16; see Figure 8 2651 - pF
Coss output capacitance VDS =30V; VGS=0 V; f=1 MHz; =25°C; see Figure 16 342 - pF
Crss reverse transfer
capacitance
VDS =30V; VGS=0 V; f=1 MHz; =25°C; see Figure 16; see Figure 8 183 - pF
td(on) turn-on delay time VDS =30V; RL =1.2 Ω; VGS =10V;
RG(ext) =4.7Ω
-19 -ns rise time - 21 - ns
td(off) turn-off delay time - 37 - ns fall time - 13 - ns
NXP Semiconductors PSMN7R6-60BS
N-channel 60 V 7.8 mΩ standard level MOSFET in D2PAK
Source-drain diode
VSD source-drain voltage IS =25A; VGS =0V; Tj =25°C;
see Figure 17 0.86 1.2 V
trr reverse recovery time IS =25A; dIS/dt= 100 A/µs; VGS =0V;
VDS =30V 40.4 - ns recovered charge - 56 - nC
Table 6. Characteristics …continued
NXP Semiconductors PSMN7R6-60BS
N-channel 60 V 7.8 mΩ standard level MOSFET in D2PAK
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