PSMN7R0-100PS Fast Delivery |IC PHOENIX CO.,LIMITED

PSMN7R0-100PS ,N-channel 100V 6.8 m鈩?standard level MOSFET in TO220.General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175C. This product ..
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PSMN7R0-100PS
N-channel 100V 6.8 m鈩?standard level MOSFET in TO220.
TO-220AB PSMN7R0-100PS
N-channel 100V 6.8 mΩ standard level MOSFET in TO220.17 October 2013 Product data sheet General description
Standard level N-channel MOSFET in TO220 package qualified to 175C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment. Features and benefits High efficiency due to low switching and conduction losses• Improved dynamic avalanche performance• Suitable for standard level gate drive Applications DC-to-DC converters• Load switching• Motor control• Server power supplies Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 100 V drain current Tmb = 25 °C; VGS = 10 V; Fig. 1 [1] - - 100 A
Ptot total power dissipation Tmb = 25 °C; Fig. 2 - - 269 W junction temperature -55 - 175 °C
Static characteristics
VGS = 10 V; ID = 15 A; Tj = 100 °C;
Fig. 12 - 12 mΩRDSon drain-source on-stateresistance
VGS = 10 V; ID = 15 A; Tj = 25 °C;
Fig. 13 5.4 6.8 mΩ
Dynamic characteristics
QGD gate-drain charge VGS = 10 V; ID = 25 A; VDS = 50 V; 36 - nC 125 - nC
NXP Semiconductors PSMN7R0-100PS
N-channel 100V 6.8 mΩ standard level MOSFET in TO220.
Symbol Parameter Conditions Min Typ Max Unit
Avalanche ruggedness
EDS(AL)S non-repetitive drain-
source avalancheenergy
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A;
Vsup = 100 V; unclamped; RGS = 50 Ω - 316 mJ
[1] Continuous current is limited by package Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol G gate D drain S source D mounting base; connected to
drain2
TO-220AB (SOT78)
mbb076 Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PSMN7R0-100PS TO-220AB plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78 Marking
Table 4. Marking codes
Type number Marking code
PSMN7R0-100PS PSMN7R0-100PS
NXP Semiconductors PSMN7R0-100PS
N-channel 100V 6.8 mΩ standard level MOSFET in TO220. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 100 V
VDGR drain-gate voltage Tj ≤ 175 °C; Tj ≥ 25 °C; RGS = 20 kΩ - 100 V
VGS gate-source voltage -20 20 V
VGS = 10 V; Tmb = 100 °C; Fig. 1 - 85 AID drain current
VGS = 10 V; Tmb = 25 °C; Fig. 1 [1] - 100 A
IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3 - 475 A
Ptot total power dissipation Tmb = 25 °C; Fig. 2 - 269 W
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Tsld(M) peak soldering temperature - 260 °C
Source-drain diode source current Tmb = 25 °C [1] - 100 A
ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 475 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A;
Vsup = 100 V; unclamped; RGS = 50 Ω 316 mJ
[1] Continuous current is limited by package
NXP Semiconductors PSMN7R0-100PS
N-channel 100V 6.8 mΩ standard level MOSFET in TO220.
003aad558
150 50 100 150 200
(A)
(1)
Fig. 1. Continuous drain current as a function of
mounting base temperature
Tmb(°C)0 20015050 100
03aa16
Pder(%)
Fig. 2. Normalized total power dissipation as a
function of mounting base temperature
003aad559-123 10 102 103VDS(V)(A) Limit RDSon =VDS/ID
100msms1ms
100µs= 10µs Typ Max Unit 0.3 0.56 K/W
NXP Semiconductors PSMN7R0-100PS
N-channel 100V 6.8 mΩ standard level MOSFET in TO220.
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistancefrom junction to
ambient
vertical in free air - 60 - K/W
003aad560-4-3-2-1-6 10-5 10-4 10-3 10-2 10-1 1 10tp(s)th (j-mb)(K/W)
single shot
0.20.5δ=
Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C 90 - - VV(BR)DSS drain-source
breakdown voltage ID = 0.25 mA; VGS = 0 V; Tj = 25 °C 100 - - V
ID = 1 mA; VDS = VGS; Tj = 175 °C;
Fig. 10 - - V
ID = 1 mA; VDS = VGS; Tj = 25 °C;
Fig. 11; Fig. 10 3 4 V
VGS(th) gate-source threshold
voltage
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 10 - 4.6 V 150 µA 5 µA 100 nA 100 nA 12 mΩ 19 mΩ
NXP Semiconductors PSMN7R0-100PS
N-channel 100V 6.8 mΩ standard level MOSFET in TO220.
Symbol Parameter Conditions Min Typ Max Unit
VGS = 10 V; ID = 15 A; Tj = 25 °C;
Fig. 13 5.4 6.8 mΩ internal gate
resistance (AC)
f = 1 MHz - 0.74 - Ω
Dynamic characteristics
ID = 25 A; VDS = 50 V; VGS = 10 V;
Fig. 14; Fig. 15 125 - nCQG(tot) total gate charge
ID = 0 A; VDS = 0 V; VGS = 10 V - 100 - nC
QGS gate-source charge ID = 25 A; VDS = 50 V; VGS = 10 V;
Fig. 15; Fig. 14 28 - nC
QGS(th) pre-threshold gate-
source charge 19.4 - nC
QGS(th-pl) post-threshold gate-
source charge
ID = 25 A; VDS = 50 V; VGS = 10 V;
Fig. 15 9 - nC
QGD gate-drain charge ID = 25 A; VDS = 50 V; VGS = 10 V;
Fig. 15; Fig. 14 36 - nC
VGS(pl) gate-source plateau
voltage
VDS = 50 V; Fig. 15; Fig. 14 - 4.3 - V
Ciss input capacitance - 6686 - pF
Coss output capacitance - 438 - pF
Crss reverse transfer
capacitance
VDS = 50 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 16 272 - pF
td(on) turn-on delay time - 34.6 - ns rise time - 45.6 - ns
td(off) turn-off delay time - 103.9- ns fall time
VDS = 50 V; RL = 2 Ω; VGS = 10 V;
RG(ext) = 4.7 Ω; Tj = 25 °C 49.5 - ns
Source-drain diode
VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 17 - 0.8 1.2 V
trr reverse recovery time - 64 - ns recovered charge
IS = 25 A; dIS/dt = 100 A/µs; VGS = 0 V;
VDS = 50 V - 167 - nC
NXP Semiconductors PSMN7R0-100PS
N-channel 100V 6.8 mΩ standard level MOSFET in TO220.
003aad562
300 1 2 3 4VDS(V)
(A)
VGS(V)=4
Fig. 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
003aad566
12000 5 10 15 20VGS(V)
(pF) Ciss
Crss
Fig. 6. Input and reverse transfer capacitances as a
function of gate-source voltage; typical values
003aad572
240 50 100 150 200 250ID(A)
gfs
(S)
Fig. 7. Forward transconductance as a function of
003aad568 2 4 6VGS(V)
(A)
Tj= 175°C= 25°C
Fig. 8. Transfer characteristics: drain current as a function of gate-source voltage; typical values

Partno	Mfg	Dc	Qty	Available	Descript
PSMN7R0-100PS \|PSMN7R0100PS	NXP	N/a	7000	avai	N-channel 100V 6.8 m鈩?standard level MOSFET in TO220.