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PSMN7R0-100ES
N-channel 100V 6.8 m鈩?standard level MOSFET in I2PAK.
PSMN7R0-100ES
N-channel 100V 6.8 mΩ standard level MOSFET in I2PAK.
Rev. 03 — 23 February 2010 Product data sheet Product profile
1.1 General descriptionStandard level N-channel MOSFET in I2PAK package qualified to 175C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits High efficiency due to low switching
and conduction losses Suitable for standard level gate drive
1.3 Applications DC-to-DC converters Load switching Motor control Server power supplies
1.4 Quick reference data Table 1. Quick referenceVDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - - 100 V drain current Tmb =25°C; VGS =10V;
see Figure 1
[1] - - 100 A
Ptot total power
dissipation
Tmb=25 °C; see Figure 2 - - 269 W junction temperature -55 - 175 °C
Avalanche ruggednessEDS(AL)S non-repetitive
drain-source
avalanche energy
VGS =10V; Tj(init) =25°C; = 100 A; Vsup≤ 100V;
unclamped; RGS =50Ω - 315 mJ
Dynamic characteristicsQGD gate-drain charge VGS =10V; ID =25A;
VDS=50 V; see Figure 15
and 14
-36 - nC
QG(tot) total gate charge VGS =10V; ID =25A;
VDS=50 V; see Figure 14
and 15 125 - nC
NXP Semiconductors PSMN7R0-100ES
N-channel 100V 6.8 mΩ standard level MOSFET in I2PAK.[1] Continuous current is limited by package
Pinning information Ordering information
Static characteristicsRDSon drain-source
on-state resistance
VGS =10V; ID =15A; = 100 °C; see Figure 12
--12 mΩ
VGS =10V; ID =15A; =25 °C; see Figure 13
-5.4 6.8 mΩ
Table 1. Quick reference
Table 2. Pinning information gate
SOT226 (I2PAK) drain source D mounting base; connected to
drain
Table 3. Ordering informationPSMN7R0-100ES I2PAK plastic single-ended package (I2PAK); TO-262 SOT226
NXP Semiconductors PSMN7R0-100ES
N-channel 100V 6.8 mΩ standard level MOSFET in I2PAK. Limiting values[1] Continuous current is limited by package
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - 100 V
VDGR drain-gate voltage Tj≤ 175 °C; Tj≥25 °C; RGS =20kΩ -100 V
VGS gate-source voltage -20 20 V drain current VGS =10V; Tmb= 100 °C; see Figure 1 -85 A
VGS =10V; Tmb =25°C; see Figure 1 [1] -100 A
IDM peak drain current tp≤10 µs; pulsed; Tmb =25°C; see Figure 3 -475 A
Ptot total power dissipation Tmb =25°C; see Figure 2 -269 W
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Tsld(M) peak soldering temperature - 260 °C
Source-drain diode source current Tmb =25°C; [1] -100 A
ISM peak source current tp≤10 µs; pulsed; Tmb =25°C - 475 A
Avalanche ruggednessEDS(AL)S non-repetitive drain-source
avalanche energy
VGS =10V; Tj(init) =25°C; ID =100A;
Vsup≤ 100 V; unclamped; RGS =50Ω
-315 mJ
NXP Semiconductors PSMN7R0-100ES
N-channel 100V 6.8 mΩ standard level MOSFET in I2PAK.
NXP Semiconductors PSMN7R0-100ES
N-channel 100V 6.8 mΩ standard level MOSFET in I2PAK. Thermal characteristics
Table 5. Thermal characteristicsRth(j-mb) thermal resistance from junction to
mounting base
see Figure 4 - 0.3 0.56 K/W
Rth(j-a) thermal resistance from junction to
ambient
vertical in free air - 60 - K/W
NXP Semiconductors PSMN7R0-100ES
N-channel 100V 6.8 mΩ standard level MOSFET in I2PAK. CharacteristicsTable 6. Characteristics
Static characteristicsV(BR)DSS drain-source
breakdown voltage =0.25mA; VGS =0V; Tj =-55°C 90 - - V =0.25mA; VGS =0V; Tj =25°C 100 - - V
VGS(th) gate-source threshold
voltage =1mA; VDS = VGS; Tj= 175 °C; see Figure 10 1- - V =1mA; VDS = VGS; Tj =25°C; see Figure 11
and 10 4V =1mA; VDS = VGS; Tj =-55 °C; see Figure 10 -- 4.8 V
IDSS drain leakage current VDS =100 V; VGS =0V; Tj= 125°C - - 150 µA
VDS =100 V; VGS =0V; Tj=25°C - 0.08 4 µA
IGSS gate leakage current VGS =20V; VDS =0V; Tj=25°C - 10 100 nA
VGS =-20 V; VDS =0V; Tj=25°C - 10 100 nA
RDSon drain-source on-state
resistance
VGS =10V; ID =15A; Tj= 100 °C; see Figure 12 -- 12 mΩ
VGS =10V; ID =15A; Tj= 175 °C; see Figure 12 -15 19 mΩ
VGS =10V; ID =15A; Tj =25°C; see Figure 13 -5.4 6.8 mΩ internal gate resistance
(AC)
f=1MHz - 0.74 - Ω
Dynamic characteristicsQG(tot) total gate charge ID =25A; VDS =50V; VGS =10V; see Figure 14
and 15 125 - nC =0A; VDS =0V; VGS=10V - 100 - nC
QGS gate-source charge ID =25A; VDS =50V; VGS =10V; see Figure 15
and 14
-28 - nC
QGS(th) pre-threshold
gate-source charge =25A; VDS =50V; VGS =10V; see Figure 15- 19.4 - nC
QGS(th-pl) post-threshold
gate-source charge -nC
QGD gate-drain charge ID =25A; VDS =50V; VGS =10V; see Figure 15
and 14
-36 - nC
VGS(pl) gate-source plateau
voltage
VDS =50V; see Figure 15 and 14 -4.3 -V
Ciss input capacitance VDS =50V; VGS=0 V; f=1 MHz; Tj =25°C;
see Figure 16 6686 - pF
Coss output capacitance - 438 - pF
Crss reverse transfer
capacitance 272 - pF
td(on) turn-on delay time VDS =50V; RL =2 Ω; VGS =10V;
RG(ext) =4.7 Ω; Tj =25°C 34.6 - ns rise time - 45.6 - ns
td(off) turn-off delay time - 103.9 - ns fall time - 49.5 - ns
NXP Semiconductors PSMN7R0-100ES
N-channel 100V 6.8 mΩ standard level MOSFET in I2PAK.
Source-drain diodeVSD source-drain voltage IS =25A; VGS =0V; Tj=25 °C; see Figure 17 -0.8 1.2 V
trr reverse recovery time IS =25A; dIS/dt= 100 A/µs; VGS =0V;
VDS =50V
-64 - ns recovered charge - 167 - nC
Table 6. Characteristics …continued
NXP Semiconductors PSMN7R0-100ES
N-channel 100V 6.8 mΩ standard level MOSFET in I2PAK.
