PSMN5R6-100PS Fast Delivery |IC PHOENIX CO.,LIMITED

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PSMN5R6-100PS
N-channel 100 V 5.6 m惟 standard level MOSFET in TO220
PSMN5R6-100PS
N-channel 100 V 5.6 mΩ standard level MOSFET in TO22030 November 2012 Product data sheet Product profile
1.1 General description
Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communicationsand domestic equipment.
1.2 Features and benefits High efficiency due to low switching and conduction losses• Improved dynamic avalanche performance• Suitable for standard level gate drive sources
1.3 Applications DC-to-DC converters• Load switching• Motor control• Server power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 100 V drain current Tmb = 25 °C; VGS = 10 V; Fig. 1 [1] - - 100 A
Ptot total power dissipation Tmb = 25 °C; Fig. 2 - - 306 W
Static characteristics
RDSon drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 11; Fig. 12 4.3 5.6 mΩ
Dynamic characteristics
QGD gate-drain charge - 43 - nC
QG(tot) total gate charge
VGS = 10 V; ID = 80 A; VDS = 50 V;
Fig. 13; Fig. 14 - 141 - nC
Avalanche Ruggedness - 469 mJ
NXP Semiconductors PSMN5R6-100PS
N-channel 100 V 5.6 mΩ standard level MOSFET in TO220
[1] Continious current limited by package. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol G gate D drain S source D mounting base; connected to
drain2
TO-220AB (SOT78)
mbb076 Ordering information
Table 3. Ordering information
PackageType number Version
PSMN5R6-100PS TO-220AB plastic single-ended package; heatsink mounted; 1 mountinghole; 3-lead TO-220AB SOT78 Marking
Table 4. Marking codes
Type number Marking code
PSMN5R6-100PS PSMN5R6-100PS Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 100 V
VDGR drain-gate voltage Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ - 100 V
VGS gate-source voltage -20 20 V - 95 A [1] - 100 A
NXP Semiconductors PSMN5R6-100PS
N-channel 100 V 5.6 mΩ standard level MOSFET in TO220
Symbol Parameter Conditions Min Max Unit
IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3 - 539 A
Ptot total power dissipation Tmb = 25 °C; Fig. 2 - 306 W
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Source-drain diode source current Tmb = 25 °C [1] - 100 A
ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 539 A
Avalanche Ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A;
Vsup ≤ 100 V; RGS = 50 Ω; unclamped 469 mJ
[1] Continious current limited by package.
003aad683
150 50 100 150 200Tmb(°C)
(A)
(1)
Fig. 1. Continuous drain current as a function ofmounting base temperature
Tmb(°C)0 20015050 100
03aa16
Pder(%)
Fig. 2. Normalized total power dissipation as a
function of mounting base temperature
NXP Semiconductors PSMN5R6-100PS
N-channel 100 V 5.6 mΩ standard level MOSFET in TO220
003aad702
103 10 102 103VDS(V)
(A)
Limit RDSon= VDS/ID
100msms1ms
100µs
tp=10µs
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-mb) thermal resistancefrom junction to
mounting base
Fig. 4 - 0.3 0.49 K/W
003aad684
Zth(K/W)-20.5δ=
NXP Semiconductors PSMN5R6-100PS
N-channel 100 V 5.6 mΩ standard level MOSFET in TO220 Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
ID = 250 µA; VGS = 0 V; Tj = 25 °C 100 - - VV(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = -55 °C 90 - - V
VGS(th) gate-source threshold
voltage
ID = 1 mA; VDS = VGS; Tj = 25 °C;
Fig. 8; Fig. 9 3 4 V
ID = 1 mA; VDS = VGS; Tj = 175 °C;
Fig. 9 - - VVGSth gate-source thresholdvoltage
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 9 - 4.6 V
VDS = 100 V; VGS = 0 V; Tj = 25 °C - 0.02 10 µAIDSS drain leakage current
VDS = 100 V; VGS = 0 V; Tj = 175 °C - - 500 µA
VGS = -20 V; VDS = 0 V; Tj = 25 °C - 2 100 nAIGSS gate leakage current
VGS = 20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA
VGS = 10 V; ID = 25 A; Tj = 175 °C;
Fig. 10 - 15.7 mΩRDSon drain-source on-stateresistance
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 11; Fig. 12 4.3 5.6 mΩ gate resistance f = 1 MHz - 0.97 - Ω
Dynamic characteristics
QG(tot) total gate charge - 141 - nC
QGS gate-source charge - 36 - nC
QGD gate-drain charge
ID = 80 A; VDS = 50 V; VGS = 10 V;
Fig. 13; Fig. 14 43 - nC
Ciss input capacitance VDS = 50 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 15; Fig. 16 8061 - pF
Coss output capacitance VDS = 50 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 15 561 - pF
Crss reverse transfercapacitance VDS = 50 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 15; Fig. 16 330 - pF
td(on) turn-on delay time - 31 - ns rise time - 46 - ns
td(off) turn-off delay time - 83 - ns fall time
VDS = 50 V; RL = 0.6 Ω; VGS = 10 V;
RG(ext) = 1.5 Ω 34 - ns
Source-drain diode
VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 17 - 0.79 1.2 V
NXP Semiconductors PSMN5R6-100PS
N-channel 100 V 5.6 mΩ standard level MOSFET in TO220
Symbol Parameter Conditions Min Typ Max Unit
trr reverse recovery time - 67 - ns recovered charge
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 50 V - 182 - nC
003aad685
160 0.5 1 1.5 2VDS(V)
(A)
VGS(V)=4
Fig. 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
003aad692
250 20 40 60 80 100ID(A)
gfs
(S)
Fig. 6. Forward transconductance as a function of
drain current; typical values
003aad687
(A)=175°C Tj=25°C
03aa35
VGS(V)0 642
10-1(A)
min typ max
Fig. 8. Sub-threshold drain current as a function ofgate-source voltage
NXP Semiconductors PSMN5R6-100PS
N-channel 100 V 5.6 mΩ standard level MOSFET in TO220
Tj(°C)-60 1801200 60
003aad280
VGS(th)(V)
max
typ
min
Fig. 9. Gate-source threshold voltage as a function of
junction temperature
003aad774
-60 0 60 120 180Tj (°C)
Fig. 10. Normalized drain-source on-state resistance
factor as a function of junction temperature
003aad688 8 12 16 20VGS(V)
RDSon
(mΩ)
003aad689 20 40 60 80 100ID(A)
RDSon VGS(V)=4.58
(mΩ)
Fig. 12. Drain-source on-state resistance as a functionof drain current; typical values

Partno	Mfg	Dc	Qty	Available	Descript
PSMN5R6-100PS \|PSMN5R6100PS	NXP	N/a	90	avai	N-channel 100 V 5.6 m惟 standard level MOSFET in TO220