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PSMN5R080PS-PSMN5R0-80PS
N-channel 80 V, 4.7 m鈩?standard level MOSFET in TO-220
PSMN5R0-80PS
N-channel 80 V 4.7 mΩ standard level MOSFET
Rev. 02 — 23 June 2009 Product data sheet Product profile
1.1 General description

Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses Suitable for standard level gate drive
sources
1.3 Applications
DC-to-DC converters Load switching Motor control Server power supplies
1.4 Quick reference data

[1] Measured 3 mm from package.
Table 1. Quick reference

VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - - 80 V drain current Tmb =25°C; VGS =10V;
see Figure 1 - 100 A
Ptot total power
dissipation
Tmb=25 °C; see Figure 2 - - 270 W
Dynamic characteristics

QGD gate-drain charge VGS =10V; ID =25A;
VDS=40 V; see Figure 14;
see Figure 15
-21 - nC
Static characteristics

RDSon drain-source
on-state resistance
VGS =10V; ID =15A; =25°C;
[1] -3.7 4.7 mΩ
NXP Semiconductors PSMN5R0-80PS
N-channel 80 V 4.7 mΩ standard level MOSFET Pinning information
Ordering information
Table 2. Pinning information
gate
SOT78
(TO-220AB; SC-46)
drain source D mounting base; connected to
drain
Table 3. Ordering information

PSMN5R0-80PS TO-220AB;
SC-46
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead
TO-220AB
SOT78
NXP Semiconductors PSMN5R0-80PS
N-channel 80 V 4.7 mΩ standard level MOSFET Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - 80 V
VDGR drain-gate voltage Tj≥25 °C; Tj≤ 175 °C; RGS =20kΩ -80 V
VGS gate-source voltage -20 20 V drain current VGS =10V; Tmb= 100 °C; see Figure 1 -100 A
VGS =10V; Tmb =25°C; see Figure 1 -100 A
IDM peak drain current tp≤10 µs; pulsed; Tmb =25°C; see Figure 3 -598 A
Ptot total power dissipation Tmb =25°C; see Figure 2 -270 W
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Source-drain diode
source current Tmb =25°C - 100 A
ISM peak source current tp≤10 µs; pulsed; Tmb =25°C - 598 A
Avalanche ruggedness

EDS(AL)S non-repetitive
drain-source avalanche
energy
VGS =10V; Tj(init) =25°C; ID =100 A; Vsup≤80V;
RGS =50 Ω; unclamped
-396 mJ
NXP Semiconductors PSMN5R0-80PS
N-channel 80 V 4.7 mΩ standard level MOSFET Thermal characteristics

Table 5. Thermal characteristics

Rth(j-mb) thermal resistance from
junction to mounting
base
see Figure 4 - 0.3 0.56 K/W
NXP Semiconductors PSMN5R0-80PS
N-channel 80 V 4.7 mΩ standard level MOSFET Characteristics
Table 6. Characteristics
Static characteristics

V(BR)DSS drain-source
breakdown voltage =250 µA; VGS =0V; Tj =-55°C 73 - - V =250 µA; VGS =0V; Tj =25°C 80 - - V
VGS(th) gate-source threshold
voltage =1mA; VDS = VGS; Tj= 175 °C;
see Figure 11; see Figure 12 - V =1mA; VDS = VGS; Tj =-55 °C;
see Figure 11; see Figure 12
--4.6 V =1mA; VDS = VGS; Tj =25°C;
see Figure 11; see Figure 12
234 V
IDSS drain leakage current VDS =80V; VGS =0V; Tj=25°C --8 µA
VDS =80V; VGS =0V; Tj= 125°C - - 150 µA
IGSS gate leakage current VGS =-20 V; VDS =0V; Tj=25°C - - 100 nA
VGS =20V; VDS =0V; Tj=25°C - - 100 nA
RDSon drain-source on-state
resistance
VGS =10V; ID =15A; Tj= 100 °C;
see Figure 13
--7 mΩ
VGS =10V; ID =15A; Tj =25°C [2] -3.7 4.7 mΩ internal gate resistance
(AC)
f=1MHz - 0.95 - Ω
Dynamic characteristics

QG(tot) total gate charge ID =0A; VDS =0V; VGS =10V - 87 - nC =25A; VDS =40V; VGS =10V;
see Figure 14; see Figure 15 101 - nC
QGS gate-source charge ID =25A; VDS =40V; VGS =10V;
see Figure 14; see Figure 15
-26 - nC
QGS(th) pre-threshold
gate-source charge
-18 - nC
QGS(th-pl) post-threshold
gate-source charge - nC
QGD gate-drain charge - 21 - nC
VGS(pl) gate-source plateau
voltage =25A; VDS =40V - 4.2 - V
Ciss input capacitance VDS =12V; VGS=0 V; f=1 MHz; =25°C; see Figure 16 6793 - pF
Coss output capacitance - 913 - pF
Crss reverse transfer
capacitance 350 - pF
td(on) turn-on delay time VDS =12V; RL =0.5 Ω; VGS =10V;
RG(ext) =4.7Ω
-33 - ns rise time - 21 - ns
td(off) turn-off delay time - 73 - ns fall time - 14 - ns
NXP Semiconductors PSMN5R0-80PS
N-channel 80 V 4.7 mΩ standard level MOSFET

[1] Tested to JEDEC standards where applicable.
[2] Measured 3 mm from package.
Source-drain diode

VSD source-drain voltage IS =25A; VGS =0V; Tj =25°C;
see Figure 17
-0.8 1.2 V
trr reverse recovery time IS =50A; dIS/dt= 100 A/µs; VGS =0V;
VDS =40V
-56 - ns recovered charge - 116 - nC
Table 6. Characteristics …continued
NXP Semiconductors PSMN5R0-80PS
N-channel 80 V 4.7 mΩ standard level MOSFET
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