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PSMN4R6-60BS
N-channel 60 V, 4.4 m惟 standard level MOSFET in D2PAK
Product profile1.1 General descriptionStandard level N-channel MOSFET in a D2PAK package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits High efficiency due to low switching
and conduction losses Suitable for standard level gate drive
sources
1.3 Applications DC-to-DC converters Load switching Motor control Server power supplies
1.4 Quick reference data[1] Continuous current is limited by package.
PSMN4R6-60BS
N-channel 60 V, 4.4 mΩ standard level MOSFET in D2PAK
Rev. 1 — 22 March 2012 Product data sheet
Table 1. Quick reference dataVDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - - 60 V drain current Tmb =25°C; see Figure 1 [1] - - 100 A
Ptot total power dissipation Tmb =25°C; see Figure 2 --211 W junction temperature -55 - 175 °C
Static characteristicsRDSon drain-source on-state resistance VGS =10V; ID =25A; Tj= 100 °C; see Figure 12; see Figure 13 -5.98 7 mΩ
VGS =10V; ID =25A; Tj =25°C;
see Figure 13 3.74 4.4 mΩ
Dynamic characteristicsQGD gate-drain charge VGS =10V; ID =25A; VDS =30V;
see Figure 14; see Figure 15 14.8 - nC
QG(tot) total gate charge - 70.8 - nC
Avalanche ruggednessEDS(AL)S non-repetitive drain-source
avalanche energy
VGS =10V; Tj(init) =25°C; ID =100A;
Vsup≤60 V; RGS =50 Ω; unclamped - 266 mJ
NXP Semiconductors PSMN4R6-60BS
N-channel 60 V, 4.4 mΩ standard level MOSFET in D2PAK Pinning information[1] It is not possible to make connection to pin 2
Ordering information Marking
Table 2. Pinning information
Table 3. Ordering informationPSMN4R6-60BS D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads
(one lead cropped)
SOT404
Table 4. Marking codesPSMN4R6-60BS PSMN4R6-60BS
NXP Semiconductors PSMN4R6-60BS
N-channel 60 V, 4.4 mΩ standard level MOSFET in D2PAK Limiting values[1] Continuous current is limited by package.
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - 60 V
VDGR drain-gate voltage Tj≥25 °C; Tj≤ 175 °C; RGS =20kΩ -60 V
VGS gate-source voltage -20 20 V drain current Tmb= 100 °C; see Figure 1 [1] - 99.7 A
Tmb =25°C; see Figure 1 [1] - 100 A
IDM peak drain current pulsed; tp=10 µs; Tmb =25°C;
see Figure 3 565 A
Ptot total power dissipation Tmb =25°C; see Figure 2 -211 W
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Tsld(M) peak soldering temperature - 260 °C
Source-drain diode source current Tmb =25°C [1] - 100 A
ISM peak source current pulsed; tp=10 µs; Tmb=25°C - 565 A
Avalanche ruggednessEDS(AL)S non-repetitive drain-source
avalanche energy
VGS =10V; Tj(init) =25°C; ID =100A;
Vsup≤60 V; RGS =50 Ω; unclamped 266 mJ
NXP Semiconductors PSMN4R6-60BS
N-channel 60 V, 4.4 mΩ standard level MOSFET in D2PAK
NXP Semiconductors PSMN4R6-60BS
N-channel 60 V, 4.4 mΩ standard level MOSFET in D2PAK Thermal characteristics
Table 6. Thermal characteristicsRth(j-mb) thermal resistance from junction to
mounting base
see Figure 4 - 0.38 0.71 K/W
Rth(j-a) thermal resistance from junction to
ambient
minimum footprint; mounted on
a printed circuit board
-50 -K/W
NXP Semiconductors PSMN4R6-60BS
N-channel 60 V, 4.4 mΩ standard level MOSFET in D2PAK CharacteristicsTable 7. Characteristics
Static characteristicsV(BR)DSS drain-source breakdown voltage ID= 250 µA; VGS =0V; Tj= -55°C 54 - - V= 250 µA; VGS =0V; Tj=25°C 60 --V
VGS(th) gate-source threshold voltage ID =1mA; VDS =VGS; Tj =25 °C;
see Figure 10; see Figure 11
234V
VGSth gate-source threshold voltage ID =1mA; VDS =VGS; Tj =-55 °C;
see Figure 11
--4.8 V =1mA; VDS =VGS; Tj= 175 °C;
see Figure 11 --V
IDSS drain leakage current VDS =60 V; VGS =0V; Tj=25°C - 0.05 10 µA
VDS =60 V; VGS =0V; Tj= 125°C - - 200 µA
IGSS gate leakage current VGS =-20 V; VDS =0V; Tj=25°C - 10 100 nA
VGS =20 V; VDS =0V; Tj=25°C - 10 100 nA
RDSon drain-source on-state resistance VGS =10 V; ID =25A; Tj= 175 °C;
see Figure 12; see Figure 13 8.6 10.1 mΩ
VGS =10 V; ID =25A; Tj= 100 °C;
see Figure 12; see Figure 13
-5.98 7 mΩ
VGS =10 V; ID =25A; Tj =25°C;
see Figure 13 3.74 4.4 mΩ gate resistance f=1 MHz - 0.79 - Ω
Dynamic characteristicsQG(tot) total gate charge ID =0A; VDS =0V; VGS =10V - 63 - nC =25A; VDS =30 V; VGS =10V;
see Figure 14; see Figure 15 70.8 - nC
QGS gate-source charge - 19.5 - nC
QGS(th) pre-threshold gate-source
charge 13.5 - nC
QGS(th-pl) post-threshold gate-source
charge -nC
QGD gate-drain charge - 14.8 - nC
VGS(pl) gate-source plateau voltage ID =25A; VDS =30 V; see Figure 14;
see Figure 15
-4.3 -V
Ciss input capacitance VDS =30 V; VGS=0 V; f=1 MHz; =25°C; see Figure 16 4426 - pF
Coss output capacitance - 567 - pF
Crss reverse transfer capacitance - 293 - pF
td(on) turn-on delay time VDS =30 V; RL =1.2 Ω; VGS =10V;
RG(ext) =4.7Ω
-26 -ns rise time - 24 - ns
td(off) turn-off delay time - 58 - ns fall time - 22 - ns
NXP Semiconductors PSMN4R6-60BS
N-channel 60 V, 4.4 mΩ standard level MOSFET in D2PAK
Source-drain diodeVSD source-drain voltage IS =25A; VGS =0V; Tj =25°C;
see Figure 17 0.81 1.1 V
trr reverse recovery time IS =25A; dIS/dt= -100 A/µs;
VGS =0 V; VDS =30V
-45 -ns recovered charge - 64 - nC
Table 7. Characteristics …continued
NXP Semiconductors PSMN4R6-60BS
N-channel 60 V, 4.4 mΩ standard level MOSFET in D2PAK
