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PSMN4R5-40PS |PSMN4R540PSNXPN/a115000avaiN-channel 40 V 4.6 m鈩?standard level MOSFET
PSMN4R5-40PS |PSMN4R540PSNXP/PHN/a10000avaiN-channel 40 V 4.6 m鈩?standard level MOSFET


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PSMN4R5-40PS
N-channel 40 V 4.6 m鈩?standard level MOSFET
PSMN4R5-40PS
N-channel 40 V 4.6 mΩ standard level MOSFET
Rev. 02 — 25 June 2009 Product data sheet Product profile
1.1 General description

Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses Suitable for standard level gate drive
sources
1.3 Applications
DC-to-DC convertors Load switching Motor control Server power supplies
1.4 Quick reference data

[1] Measured 3 mm from package.
Table 1. Quick reference

VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - - 40 V drain current Tmb =25°C; VGS =10V;
see Figure 1 - 100 A
Ptot total power
dissipation
Tmb=25 °C; see Figure 2 - - 148 W
Dynamic characteristics

QGD gate-drain charge VGS =10V; ID =25A;
VDS=20 V; see Figure 14;
see Figure 15
-8.8 -nC
Static characteristics

RDSon drain-source
on-state resistance
VGS =10V; ID =25A; =25 °C; see Figure 13;
[1] -3.9 4.6 mΩ
NXP Semiconductors PSMN4R5-40PS
N-channel 40 V 4.6 mΩ standard level MOSFET Pinning information
Ordering information Limiting values
Table 2. Pinning information
gate
SOT78
(TO-220AB; SC-46)
drain source D mounting base; connected to
drain
Table 3. Ordering information

PSMN4R5-40PS TO-220AB;
SC-46
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead
TO-220AB
SOT78
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - 40 V
VDGR drain-gate voltage Tj≥25 °C; Tj≤ 175 °C; RGS =20kΩ -40 V
VGS gate-source voltage -20 20 V drain current VGS =10V; Tmb= 100 °C; see Figure 1 -96 A
VGS =10V; Tmb =25°C; see Figure 1 -100 A
IDM peak drain current tp≤10 µs; pulsed; Tmb =25°C; see Figure 3 -545 A
Ptot total power dissipation Tmb =25°C; see Figure 2 -148 W
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Source-drain diode
source current Tmb =25°C - 100 A
ISM peak source current tp≤10 µs; pulsed; Tmb =25°C - 545 A
Avalanche ruggedness
NXP Semiconductors PSMN4R5-40PS
N-channel 40 V 4.6 mΩ standard level MOSFET
NXP Semiconductors PSMN4R5-40PS
N-channel 40 V 4.6 mΩ standard level MOSFET Thermal characteristics

Table 5. Thermal characteristics

Rth(j-mb) thermal resistance from
junction to mounting
base
see Figure 4 -0.65 1 K/W
NXP Semiconductors PSMN4R5-40PS
N-channel 40 V 4.6 mΩ standard level MOSFET Characteristics
Table 6. Characteristics
Tested to JEDEC standards where applicable.
Static characteristics

V(BR)DSS drain-source
breakdown voltage =250 µA; VGS =0V; Tj =-55°C 36 - - V =250 µA; VGS =0V; Tj =25°C 40 - - V
VGS(th) gate-source threshold
voltage =1mA; VDS = VGS; Tj =-55 °C; see
Figure 11; see Figure 12
--4.6 V =1mA; VDS = VGS; Tj= 175 °C; see
Figure 11; see Figure 12 - V =1mA; VDS = VGS; Tj =25°C; see
Figure 11; see Figure 12
234 V
IDSS drain leakage current VDS =40V; VGS =0V; Tj=25°C --3 µA
VDS =40V; VGS =0V; Tj= 125°C --60 µA
IGSS gate leakage current VGS =20V; VDS =0V; Tj=25°C - - 100 nA
VGS =-20 V; VDS =0V; Tj=25°C - - 100 nA
RDSon drain-source on-state
resistance
VGS =10V; ID =25A; Tj= 100 °C; see
Figure 13
--6.7 mΩ
VGS =10V; ID =25A; Tj =25°C; see
Figure 13;
[1] -3.9 4.6 mΩ internal gate resistance
(AC)
f=1MHz - 0.97 - Ω
Dynamic characteristics

QG(tot) total gate charge ID =0A; VDS =0V; VGS =10V - 35 - nC =25A; VDS =20V; VGS =10V; see
Figure 14; see Figure 15 42.3 - nC
QGS gate-source charge ID =25A; VDS =20V; VGS =10V; see
Figure 14; see Figure 15 13.8 - nC
QGS(th) pre-threshold
gate-source charge
-7.9 - nC
QGS(th-pl) post-threshold
gate-source charge
-5.9 - nC
QGD gate-drain charge - 8.8 - nC
VGS(pl) gate-source plateau
voltage =25A; VDS =20V; see Figure 14 -4.8 - V
Ciss input capacitance VDS =12V; VGS=0 V; f=1 MHz; =25°C; see Figure 16 2683 - pF
Coss output capacitance - 660 - pF
Crss reverse transfer
capacitance 290 - pF
td(on) turn-on delay time VDS =12V; RL =0.5 Ω; VGS =10V;
RG(ext) =4.7Ω
-19 - ns rise time - 23 - ns
td(off) turn-off delay time - 30 - ns fall time - 9 - ns
NXP Semiconductors PSMN4R5-40PS
N-channel 40 V 4.6 mΩ standard level MOSFET

[1] Measured 3 mm from package.
Source-drain diode

VSD source-drain voltage IS =25A; VGS =0V; Tj=25 °C; see
Figure 17 0.75 1.2 V
trr reverse recovery time IS =50A; dIS/dt= -100 A/µs; VGS =0V;
VDS =20V
-40 - ns recovered charge IS =50A; dIS/dt= -100 A/µs; VGS =0V;
VDS =20V; Tj =25°C
-33 - nC
Table 6. Characteristics …continued

Tested to JEDEC standards where applicable.
NXP Semiconductors PSMN4R5-40PS
N-channel 40 V 4.6 mΩ standard level MOSFET
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