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PSMN4R4-80PS
N-channel 80 V, 4.1 m鈩?standard level FET
PSMN4R4-80PS
N-channel 80 V , 4.1 mΩ standard level FET
Rev. 01 — 18 June 2009 Product data sheet Product profile
1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits Low conduction losses due to low
on-state resistance Suitable for standard level gate drive
sources
1.3 Applications DC - DC converters Load switch Motor control Server power supplies
1.4 Quick reference data[1] Measured 3 mm from package.
Table 1. Quick reference drain current Tmb =25°C; VGS =10V;
see Figure 1; see Figure 3 - 100 A
Ptot total power
dissipation
Tmb=25 °C; see Figure 2 - - 306 W
Dynamic characteristicsQGD gate-drain charge VGS =10V; ID =80A;
VDS=40 V; see Figure 14;
see Figure 15
-25 - nC
Static characteristicsRDSon drain-source
on-state resistance
VGS =10V; ID =15A; =25 °C; see Figure 6;
see Figure 13
[1] -3.3 4.1 mΩ
NXP Semiconductors PSMN4R4-80PS
N-channel 80 V, 4.1 mΩ standard level FET Pinning information Ordering information
Table 2. Pinning information gate
SOT78
(TO-220AB; SC-46) drain source D drain
Table 3. Ordering informationPSMN4R4-80PS TO-220AB;
SC-46
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead
TO-220AB
SOT78
NXP Semiconductors PSMN4R4-80PS
N-channel 80 V, 4.1 mΩ standard level FET Limiting values
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - 80 V
VDGR drain-gate voltage Tj≥25 °C; Tj≤ 175 °C; RGS =20kΩ -80 V
VGS gate-source voltage -20 20 V drain current VGS =10V; Tmb= 100 °C; see Figure 1;
see Figure 3
-100 A
VGS =10V; Tmb =25°C; see Figure 1;
see Figure 3
-100 A
IDM peak drain current tp≤10 µs; pulsed; Tmb =25°C; see Figure 3 -680 A
Ptot total power dissipation Tmb =25°C; see Figure 2 -306 W
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Source-drain diode source current Tmb =25°C - 100 A
ISM peak source current tp≤10 µs; pulsed; Tmb =25°C - 680 A
Avalanche ruggednessEDS(AL)S non-repetitive
drain-source avalanche
energy
VGS =10V; Tj(init) =25°C; ID =100 A; Vsup≤80V;
RGS =50 Ω; unclamped
-591 mJ
NXP Semiconductors PSMN4R4-80PS
N-channel 80 V, 4.1 mΩ standard level FET Thermal characteristics
Table 5. Thermal characteristicsRth(j-mb) thermal resistance from
junction to mounting
base
see Figure 4 - 0.23 0.49 K/W
NXP Semiconductors PSMN4R4-80PS
N-channel 80 V, 4.1 mΩ standard level FET CharacteristicsTable 6. Characteristics
Static characteristicsV(BR)DSS drain-source
breakdown voltage =250 µA; VGS =0V; Tj =-55°C 73 - - V =250 µA; VGS =0V; Tj =25°C 80 - - V
VGS(th) gate-source threshold
voltage =1mA; VDS = VGS; Tj= 175 °C;
see Figure 11 - V =1mA; VDS = VGS; Tj =-55 °C;
see Figure 11
--4.6 V =1mA; VDS = VGS; Tj =25°C;
see Figure 11; see Figure 12
234 V
IDSS drain leakage current VDS =80V; VGS =0V; Tj=25°C --10 µA
VDS =80V; VGS =0V; Tj= 125°C - - 200 µA
IGSS gate leakage current VGS =-20 V; VDS =0V; Tj=25°C - - 100 nA
VGS =20V; VDS =0V; Tj=25°C - - 100 nA
RDSon drain-source on-state
resistance
VGS =10V; ID =15A; Tj= 175 °C;
see Figure 13
[2] - 7.6 9.47 mΩ
VGS =10V; ID =15A; Tj= 100 °C;
see Figure 13
-5.5 6.8 mΩ
VGS =10V; ID =15A; Tj =25°C;
see Figure 6; see Figure 13
[2] -3.3 4.1 mΩ internal gate resistance
(AC)
f=1MHz - 1 - Ω
Dynamic characteristicsQG(tot) total gate charge ID =0A; VDS =0V; VGS =10V - 112 - nC =80A; VDS =40V; VGS =10V;
see Figure 14; see Figure 15 125 - nC
QGS gate-source charge ID =80A; VDS =40V; VGS =10V;
see Figure 14; see Figure 15
-39 - nC
QGS(th) pre-threshold
gate-source charge
-24 - nC
QGS(th-pl) post-threshold
gate-source charge
-15 - nC
QGD gate-drain charge - 25 - nC
VGS(pl) gate-source plateau
voltage =25A; VDS =40V; see Figure 14;
see Figure 15
-4.65 - V
Ciss input capacitance VDS =40V; VGS=0 V; f=1 MHz; =25°C; see Figure 16 8400 - pF
Coss output capacitance - 700 - pF
Crss reverse transfer
capacitance 336 - pF
td(on) turn-on delay time VDS =40V; RL =0.5 Ω; VGS =10V;
RG(ext) =1.5Ω 34.7 - ns rise time - 38.1 - ns
td(off) turn-off delay time - 66 - ns
NXP Semiconductors PSMN4R4-80PS
N-channel 80 V, 4.1 mΩ standard level FET[1] Tested to JEDEC standards where applicable.
[2] Measured 3 mm from package.
Source-drain diodeVSD source-drain voltage IS =25A; VGS =0V; Tj =25°C;
see Figure 17
-0.8 1.2 V
trr reverse recovery time IS =25A; dIS/dt= 100 A/µs; VGS =0V;
VDS =20V
-59 - ns recovered charge - 130 - nC
Table 6. Characteristics …continued
NXP Semiconductors PSMN4R4-80PS
N-channel 80 V, 4.1 mΩ standard level FET
