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PSMN4R4-80BS
N-channel 80 V, 4.5 m鈩?standard level MOSFET in D2PAK
Product profile1.1 General descriptionStandard level N-channel MOSFET in SOT404 package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits High efficiency due to low switching
and conduction losses Suitable for standard level gate drive
sources
1.3 Applications DC - DC converters Load switching Motor control Server power supplies
1.4 Quick reference data[1] Continuous current is limited by package
PSMN4R4-80BS
N-channel 80 V, 4.5 mΩ standard level MOSFET in D2PAK
Rev. 1 — 22 March 2012 Product data sheet
Table 1. Quick reference dataVDS drain-source voltage Tj≥25 °C; Tj≤ 175°C --80 V drain current Tmb =25 °C; VGS =10V; see Figure 1
[1] - - 100 A
Ptot total power dissipation Tmb=25 °C; see Figure 2 - - 306 W junction temperature -55 - 175 °C
Static characteristicsRDSon drain-source on-state resistance VGS =10V; ID =25A; Tj =100 °C;
see Figure 13; see Figure 6 6.27 7.4 mΩ
VGS =10V; ID =25A; Tj =25°C;
see Figure 6
-3.8 4.5 mΩ
Dynamic characteristicsQGD gate-drain charge VGS =10V; ID =25A; VDS =40V; see Figure 14; see Figure 15 -25 -nC
QG(tot) total gate charge - 125 - nC
Avalanche ruggednessEDS(AL)S non-repetitive drain-source avalanche energy VGS =10V; Tj(init) =25 °C; ID =100 A; Vsup≤80V;
RGS =50 Ω; unclamped - 591 mJ
NXP Semiconductors PSMN4R4-80BS
N-channel 80 V, 4.5 mΩ standard level MOSFET in D2PAK Pinning information[1] It is not possible to make connection to pin 2
Ordering information Marking
Table 2. Pinning information
Table 3. Ordering informationPSMN4R4-80BS D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads
(one lead cropped)
SOT404
Table 4. Marking codesPSMN4R4-80BS PSMN4R4-80BS
NXP Semiconductors PSMN4R4-80BS
N-channel 80 V, 4.5 mΩ standard level MOSFET in D2PAK Limiting values[1] Continuous current is limited by package
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - 80 V
VDGR drain-gate voltage Tj≥25 °C; Tj≤ 175 °C; RGS =20kΩ -80 V
VGS gate-source voltage -20 20 V drain current VGS =10V; Tmb= 100 °C; see Figure 1[1] - 100 A
VGS =10V; Tmb =25 °C; see Figure 1 [1] - 100 A
IDM peak drain current pulsed; tp≤10 µs; Tmb =25 °C;
see Figure 3 680 A
Ptot total power dissipation Tmb =25 °C; see Figure 2 - 306 W
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Tsld(M) peak soldering temperature - 260 °C
Source-drain diode source current Tmb =25°C [1] - 100 A
ISM peak source current pulsed; tp≤10 µs; Tmb=25°C - 680 A
Avalanche ruggednessEDS(AL)S non-repetitive drain-source avalanche
energy
VGS =10V; Tj(init) =25°C; ID =100A;
Vsup≤80 V; RGS =50 Ω; unclamped 591 mJ
NXP Semiconductors PSMN4R4-80BS
N-channel 80 V, 4.5 mΩ standard level MOSFET in D2PAK
NXP Semiconductors PSMN4R4-80BS
N-channel 80 V, 4.5 mΩ standard level MOSFET in D2PAK Thermal characteristics
Table 6. Thermal characteristicsRth(j-mb) thermal resistance from junction to mounting
base
see Figure 4 - 0.23 0.49 K/W
Rth(j-a) thermal resistance from junction to ambient Minimum footprint;
mounted on a printed
circuit board
-50 -K/W
NXP Semiconductors PSMN4R4-80BS
N-channel 80 V, 4.5 mΩ standard level MOSFET in D2PAK CharacteristicsTable 7. CharacteristicsTested to JEDEC standards where applicable.
Static characteristicsV(BR)DSS drain-source breakdown voltageID= 250 µA; VGS =0V; Tj= -55°C 73 - - V= 250 µA; VGS =0V; Tj=25°C 80 --V
VGS(th) gate-source threshold voltage ID =1mA; VDS =VGS; Tj= 175 °C;
see Figure 11 --V =1mA; VDS =VGS; Tj =-55 °C;
see Figure 11
--4.6 V =1mA; VDS =VGS; Tj =25 °C;
see Figure 11; see Figure 12
234V
IDSS drain leakage current VDS =80 V; VGS =0V; Tj=25°C - 0.02 10 µA
VDS =80 V; VGS =0V; Tj= 125°C - - 200 µA
IGSS gate leakage current VGS =-20 V; VDS =0V; Tj=25°C - 10 100 nA
VGS =20 V; VDS =0V; Tj=25°C - 10 100 nA
RDSon drain-source on-state resistance VGS =10 V; ID =25A; Tj= 175 °C;
see Figure 13; see Figure 6 9.12 10.7 mΩ
VGS =10 V; ID =25A; Tj= 100 °C;
see Figure 13; see Figure 6 6.27 7.4 mΩ
VGS =10 V; ID =25A; Tj =25°C;
see Figure 6
-3.8 4.5 mΩ internal gate resistance (AC) f=1 MHz - 1 - Ω
Dynamic characteristicsQG(tot) total gate charge ID =0A; VDS =0V; VGS=10V -112 -nC =25A; VDS =40 V; VGS =10V;
see Figure 14; see Figure 15 125 - nC
QGS gate-source charge - 39 - nC
QGS(th) pre-threshold gate-source
charge
-24 -nC
QGS(th-pl) post-threshold gate-source
charge
-15 -nC
QGD gate-drain charge - 25 - nC
VGS(pl) gate-source plateau voltage ID =25A; VDS=40 V; see Figure 14;
see Figure 15
-4.65 -V
Ciss input capacitance VDS =40 V; VGS=0 V; f=1 MHz; =25°C; see Figure 16 8400 - pF
Coss output capacitance - 700 - pF
Crss reverse transfer capacitance - 336 - pF
td(on) turn-on delay time VDS =40 V; RL =0.5 Ω; VGS =10V;
RG(ext) =1.5Ω 34.7 - ns rise time - 38.1 - ns
td(off) turn-off delay time - 66 - ns fall time - 18.4 - ns
NXP Semiconductors PSMN4R4-80BS
N-channel 80 V, 4.5 mΩ standard level MOSFET in D2PAK
Source-drain diodeVSD source-drain voltage IS =25A; VGS =0V; Tj =25°C;
see Figure 17
-0.8 1.2 V
trr reverse recovery time IS =25A; dIS/dt= 100 A/µs;
VGS =0 V; VDS =20V
-59 -ns recovered charge - 130 - nC
Table 7. Characteristics …continuedTested to JEDEC standards where applicable.
NXP Semiconductors PSMN4R4-80BS
N-channel 80 V, 4.5 mΩ standard level MOSFET in D2PAK