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PSMN4R3-80ES |PSMN4R380ESNXP/PHN/a10000avaiN-channel 80 V, 4.3 m鈩?standard level MOSFET in I2PAK


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PSMN4R3-80ES
N-channel 80 V, 4.3 m鈩?standard level MOSFET in I2PAK
Product profile1.1 General description
Standard level N-channel MOSFET in I2PAK package qualified to 175C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits High efficiency due to low switching
and conduction losses Suitable for standard level gate drive
1.3 Applications DC-to-DC converters Load switch Motor control Server power supplies
1.4 Quick reference data
PSMN4R3-80ES
N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK
Rev. 02 — 18 April 2011 Product data sheet
Table 1. Quick reference data
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - - 80 V drain current Tmb =25°C; VGS =10V; see Figure 1
[1]- - 120 A
Ptot total power
dissipation
Tmb =25°C; see Figure 2 - - 306 W junction temperature -55 - 175 °C
Static characteristics
RDSon drain-source
on-state resistance
VGS =10V; ID =25A; =25 °C; see Figure 13
[2] -3.7 4.3 mΩ
VGS =10V; ID =25A; Tj =100 °C; see Figure 12
[2] -6.1 7.1 mΩ
Dynamic characteristics
QGD gate-drain charge VGS =10V; ID =75A;
VDS=40 V; see Figure 14;
see Figure 15
-28 - nC
QG(tot) total gate charge - 111 - nC
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
VGS =10V; Tj(init) =25°C; ID= 120 A; Vsup≤80V;
RGS =50 Ω; unclamped - 676 mJ
NXP Semiconductors PSMN4R3-80ES
N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK
[1] Continuous current is limited by package.
[2] Measured 3 mm from package. Pinning information Ordering information
Table 2. Pinning information G gate
SOT226 (I2PAK) D drain source D drain
Table 3. Ordering information
PSMN4R3-80ES I2PAK plastic single-ended package (I2PAK); TO-262 SOT226
NXP Semiconductors PSMN4R3-80ES
N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK Limiting values
[1] Continuous current is limited by package.
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - 80 V
VDGR drain-gate voltage Tj≥25 °C; Tj≤ 175 °C; RGS =20kΩ -80 V
VGS gate-source voltage -20 20 V drain current VGS =10 V; Tmb= 100 °C; see Figure 1 [1]- 120 A
VGS =10 V; Tmb =25°C; see Figure 1 [1]- 120 A
IDM peak drain current pulsed; tp≤10 µs; Tmb =25°C; see Figure 3 - 688 A
Ptot total power dissipation Tmb =25°C; see Figure 2 - 306 W
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Tsld(M) peak soldering temperature - 260 °C
Source-drain diode source current Tmb =25°C [1]- 120 A
ISM peak source current pulsed; tp≤10 µs; Tmb=25°C - 688 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
VGS =10 V; Tj(init) =25°C; ID =120A;
Vsup≤80 V; RGS =50 Ω; unclamped 676 mJ
NXP Semiconductors PSMN4R3-80ES
N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK
NXP Semiconductors PSMN4R3-80ES
N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK Thermal characteristics
Table 5. Thermal characteristics
Rth(j-mb) thermal resistance from junction to
mounting base
see Figure 4 - 0.22 0.49 K/W
Rth(j-a) thermal resistance from junction to
ambient
Vertical in free air - 60 - K/W
NXP Semiconductors PSMN4R3-80ES
N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK CharacteristicsTable 6. Characteristics
Static characteristics
V(BR)DSS drain-source breakdown
voltage =250 µA; VGS =0V; Tj= -55°C 73 - - V =250 µA; VGS =0V; Tj=25°C 80 --V
VGS(th) gate-source threshold voltage ID =1mA; VDS =VGS; Tj= 175 °C;
see Figure 10 --V =1mA; VDS =VGS; Tj =-55 °C;
see Figure 10
--4.6 V =1mA; VDS =VGS; Tj =25°C;
see Figure 10; see Figure 11
234V
IDSS drain leakage current VDS =80V; VGS =0V; Tj=25°C - 0.02 10 µA
VDS =80V; VGS =0V; Tj= 175°C - - 500 µA
IGSS gate leakage current VGS =-20 V; VDS =0V; Tj=25°C - - 100 nA
VGS =20V; VDS =0V; Tj=25°C - - 100 nA
RDSon drain-source on-state
resistance
VGS =10V; ID =25A; Tj= 175 °C;
see Figure 12
[1]- 8.9 10.3 mΩ
VGS =10V; ID =25A; Tj =25°C;
see Figure 13
[1] -3.7 4.3 mΩ
VGS =10V; ID =25A; Tj= 100 °C;
see Figure 12
[1] -6.1 7.1 mΩ internal gate resistance (AC) f=1 MHz - 0.9 - Ω
Dynamic characteristics
QG(tot) total gate charge ID =0A; VDS =0V; VGS=10V - 104 - nC =75A; VDS =40V; VGS =10V;
see Figure 14; see Figure 15 111 - nC
QGS gate-source charge - 38 - nC
QGS(th) pre-threshold gate-source
charge
-24 - nC
QGS(th-pl) post-threshold gate-source
charge
-14 - nC
QGD gate-drain charge - 28 - nC
VGS(pl) gate-source plateau voltage ID =25A; VDS =40V;
see Figure 14; see Figure 15
-6.1 -V
Ciss input capacitance VDS =40V; VGS=0 V; f=1 MHz; =25°C; see Figure 16 8161 - pF
Coss output capacitance - 701 - pF
Crss reverse transfer capacitance - 337 - pF
td(on) turn-on delay time VDS =40V; RL =0.53 Ω;
VGS =10V; RG(ext) =4.7Ω; =75A
-38 - ns rise time - 29 - ns
td(off) turn-off delay time - 94 - ns fall time - 33 - ns
NXP Semiconductors PSMN4R3-80ES
N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK
[1] Measured 3 mm from package.
Source-drain diode
VSD source-drain voltage IS =25A; VGS =0 V; Tj =25°C;
see Figure 17
-0.8 1.2 V
trr reverse recovery time IS =25A; dIS/dt= 100 A/µs;
VGS =0V; VDS =20V
-59 - ns recovered charge - 109 - nC
Table 6. Characteristics …continued
NXP Semiconductors PSMN4R3-80ES
N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK
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